JPS5467773A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5467773A JPS5467773A JP13435777A JP13435777A JPS5467773A JP S5467773 A JPS5467773 A JP S5467773A JP 13435777 A JP13435777 A JP 13435777A JP 13435777 A JP13435777 A JP 13435777A JP S5467773 A JPS5467773 A JP S5467773A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- silicon dioxide
- etched
- silicon
- insulation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To reduce side etching and selectively etch insulation film by producing defects through ion implantation prior to etching of the insulation film of a semiconductor and controlling the rate of etching with the defect thus produced.
CONSTITUTION: After silicon dioxide 2 is grown on monocrystalline silicon 1, an etching mask pattern is formed with photo resist 3. Next, heavy neutral atom ions 4 are implanted to the extent of not allowing the ions to arrive at the silicon, thereby beforehand producing defects 5 in the ion implanted region. When this sample is wet-etched or plasma- etched after the ion implantation, the silicon dioxide is etched at a rate of etching faster than before, as a result of which even if the silicon dioxide is slightly thick, the etching of the silicon dioxide of less side etching may be realized.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13435777A JPS5467773A (en) | 1977-11-09 | 1977-11-09 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13435777A JPS5467773A (en) | 1977-11-09 | 1977-11-09 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5467773A true JPS5467773A (en) | 1979-05-31 |
Family
ID=15126470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13435777A Pending JPS5467773A (en) | 1977-11-09 | 1977-11-09 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5467773A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789225A (en) * | 1980-08-25 | 1982-06-03 | Gen Electric | Method of rapidly isolating and diffusing |
| JPS584923A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Forming method of selective stacked-layer using ion beam radiation |
| JPS5839777A (en) * | 1981-08-31 | 1983-03-08 | Sanyo Electric Co Ltd | Etching method |
-
1977
- 1977-11-09 JP JP13435777A patent/JPS5467773A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789225A (en) * | 1980-08-25 | 1982-06-03 | Gen Electric | Method of rapidly isolating and diffusing |
| JPH0210576B2 (en) * | 1980-08-25 | 1990-03-08 | Gen Electric | |
| JPS584923A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Forming method of selective stacked-layer using ion beam radiation |
| JPH0412024B2 (en) * | 1981-06-30 | 1992-03-03 | Fujitsu Ltd | |
| JPS5839777A (en) * | 1981-08-31 | 1983-03-08 | Sanyo Electric Co Ltd | Etching method |
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