JPS57194568A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57194568A
JPS57194568A JP56079425A JP7942581A JPS57194568A JP S57194568 A JPS57194568 A JP S57194568A JP 56079425 A JP56079425 A JP 56079425A JP 7942581 A JP7942581 A JP 7942581A JP S57194568 A JPS57194568 A JP S57194568A
Authority
JP
Japan
Prior art keywords
junction
redundant circuit
laser beam
broken down
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079425A
Other languages
Japanese (ja)
Inventor
Kazuhiko Hashimoto
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56079425A priority Critical patent/JPS57194568A/en
Publication of JPS57194568A publication Critical patent/JPS57194568A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To operate as the redundant circuit by a method wherein the junction is broken down by means of the local treatment such as the laser beam radiation to the P-N junction face or neighborhood. CONSTITUTION:The P type region 3-2, wiring 3-3, 3-4, protective film 3-5 are formed on the N type substrate 3-1. When the redundant circuit is to be operated on the boundary between the substrate 3-1 and the P type region 3-2, the laser beam is radiated. Through these procedures, the redundant circuit is simplified, because the junction is broken down indicating the ohmic characteristics and the conductive status when the inverse voltage is impressed.
JP56079425A 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof Pending JPS57194568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079425A JPS57194568A (en) 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079425A JPS57194568A (en) 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57194568A true JPS57194568A (en) 1982-11-30

Family

ID=13689506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079425A Pending JPS57194568A (en) 1981-05-27 1981-05-27 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57194568A (en)

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