JPS53105964A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS53105964A JPS53105964A JP2060777A JP2060777A JPS53105964A JP S53105964 A JPS53105964 A JP S53105964A JP 2060777 A JP2060777 A JP 2060777A JP 2060777 A JP2060777 A JP 2060777A JP S53105964 A JPS53105964 A JP S53105964A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- laser beam
- absorber layer
- comparatively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To carry out scribing by provideng a laser beam absorber layer on a comparatively thick glass protective film and radiation a comparatively feeble laser beam over the absorber layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2060777A JPS53105964A (en) | 1977-02-26 | 1977-02-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2060777A JPS53105964A (en) | 1977-02-26 | 1977-02-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53105964A true JPS53105964A (en) | 1978-09-14 |
Family
ID=12031940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2060777A Pending JPS53105964A (en) | 1977-02-26 | 1977-02-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53105964A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005252196A (en) * | 2004-03-08 | 2005-09-15 | Toshiba Corp | Semiconductor device and its manufacturing method |
JP2014511042A (en) * | 2011-04-14 | 2014-05-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Manufacturing method of semiconductor body |
JP2014187143A (en) * | 2013-03-22 | 2014-10-02 | Shindengen Electric Mfg Co Ltd | Substrate for forming semiconductor device, method for manufacturing the same, mesa type semiconductor device and method for manufacturing the same |
JP2018125448A (en) * | 2017-02-02 | 2018-08-09 | 株式会社ディスコ | Wafer processing method |
-
1977
- 1977-02-26 JP JP2060777A patent/JPS53105964A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005252196A (en) * | 2004-03-08 | 2005-09-15 | Toshiba Corp | Semiconductor device and its manufacturing method |
JP2014511042A (en) * | 2011-04-14 | 2014-05-01 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Manufacturing method of semiconductor body |
US9324615B2 (en) | 2011-04-14 | 2016-04-26 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor body |
US9768344B2 (en) | 2011-04-14 | 2017-09-19 | Osram Opto Semiconductors Gmbh | Method of producing a semiconductor body |
EP2697835B1 (en) * | 2011-04-14 | 2019-09-04 | OSRAM Opto Semiconductors GmbH | Method for producing a semiconductor body |
JP2014187143A (en) * | 2013-03-22 | 2014-10-02 | Shindengen Electric Mfg Co Ltd | Substrate for forming semiconductor device, method for manufacturing the same, mesa type semiconductor device and method for manufacturing the same |
JP2018125448A (en) * | 2017-02-02 | 2018-08-09 | 株式会社ディスコ | Wafer processing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2027989B (en) | P-n junctions formed by laser irradiation | |
JPS5548926A (en) | Preparation of semiconductor device | |
JPS5334984A (en) | Immobilization of enzyme by light irradiation | |
JPS53105964A (en) | Manufacture of semiconductor device | |
JPS5331103A (en) | Forming method of protecting layer of recording members | |
JPS5437472A (en) | Manufacture of semiconductor | |
JPS5390890A (en) | Semiconductor laser device | |
JPS53105977A (en) | Manufacture of semiconductor device | |
JPS52100982A (en) | Semiconductor device | |
JPS546767A (en) | Manufacture of semiconductor device | |
JPS5371A (en) | Scribing method of semiconductor wafer | |
JPS5432067A (en) | Semiconductor device and its manufacture | |
JPS5411690A (en) | Semiconductor laser unit | |
JPS5411674A (en) | Semiconductor device of mesa type | |
JPS5431281A (en) | Optical exposure mask | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS532074A (en) | Scribing method for semiconductor wafer | |
JPS532071A (en) | Manufacture of semiconductor device | |
JPS52117650A (en) | Wavelength conversion film | |
JPS53105375A (en) | Semiconductor device | |
JPS535574A (en) | Manufacture of semiconductor device | |
JPS53124073A (en) | Sealing unit for glass sealing type semiconductor device | |
JPS5422766A (en) | Semiconductor element | |
JPS53121464A (en) | Glass constituent for semiconductor element surface stabilization | |
JPS5372451A (en) | Laser scriber unit |