JPS53120291A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS53120291A JPS53120291A JP3579277A JP3579277A JPS53120291A JP S53120291 A JPS53120291 A JP S53120291A JP 3579277 A JP3579277 A JP 3579277A JP 3579277 A JP3579277 A JP 3579277A JP S53120291 A JPS53120291 A JP S53120291A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- manufacture
- resistance region
- outer side
- verge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To form a reflecting mirror surface by etching the outer side of the rectangular low-resistance region provided on the side surface near the active layer of the semiconductor laser crystal so that the verge of the outer side may be parallel to the side of the resistance region.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3579277A JPS53120291A (en) | 1977-03-29 | 1977-03-29 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3579277A JPS53120291A (en) | 1977-03-29 | 1977-03-29 | Manufacture of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53120291A true JPS53120291A (en) | 1978-10-20 |
Family
ID=12451759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3579277A Pending JPS53120291A (en) | 1977-03-29 | 1977-03-29 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53120291A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59220985A (en) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | Semiconductor laser device |
JPS62115792A (en) * | 1985-11-15 | 1987-05-27 | Hitachi Ltd | Semiconductor laser |
JP2008108844A (en) * | 2006-10-24 | 2008-05-08 | Toyota Central R&D Labs Inc | Group iii nitride semiconductor device having trench or mesa-structure, and manufacturing method thereof |
-
1977
- 1977-03-29 JP JP3579277A patent/JPS53120291A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59220985A (en) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | Semiconductor laser device |
JPS62115792A (en) * | 1985-11-15 | 1987-05-27 | Hitachi Ltd | Semiconductor laser |
JP2008108844A (en) * | 2006-10-24 | 2008-05-08 | Toyota Central R&D Labs Inc | Group iii nitride semiconductor device having trench or mesa-structure, and manufacturing method thereof |
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