JPS57189394A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS57189394A
JPS57189394A JP7516481A JP7516481A JPS57189394A JP S57189394 A JPS57189394 A JP S57189394A JP 7516481 A JP7516481 A JP 7516481A JP 7516481 A JP7516481 A JP 7516481A JP S57189394 A JPS57189394 A JP S57189394A
Authority
JP
Japan
Prior art keywords
switching element
channel type
potential supply
supply terminal
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7516481A
Other languages
Japanese (ja)
Other versions
JPS614194B2 (en
Inventor
Hideharu Egawa
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7516481A priority Critical patent/JPS57189394A/en
Priority to US06/378,266 priority patent/US4883986A/en
Priority to EP82302516A priority patent/EP0066980B1/en
Priority to DE8282302516T priority patent/DE3275613D1/en
Publication of JPS57189394A publication Critical patent/JPS57189394A/en
Publication of JPS614194B2 publication Critical patent/JPS614194B2/ja
Priority to US07/345,358 priority patent/US5017994A/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a semiconductor memory that permits high integration in constitution of SOS, etc. by connecting MOS transistors and switching elements of p channel type and n channel type to three potential supply terminals by a specific method. CONSTITUTION:The 1st switching element Tp2 as load, the 1st channel type MOS transistor Tp2 of a memory part M, and the 2nd switching element Tp2 of the 1st channel type are connected in series between the 1st potential supply terminal VG and the 2nd potential supply terminal Vss. The 3rd switching element T2N as load, an MOS transistor TN2 of the 2nd channel type, and the 4th switching element T2N are connected in series between the 3rd potential supply terminal VDD on the side opposite from the abovementioned 2nd potential and the 1st potential supply terminal VG. With the terminals on one side of the 1st, 3rd switching elements as the 1st, 2nd output terminals O4, O3 respectively, the above-described 1st or 3rd switching element Tp2 or T2N and the 2nd or 4th switching element Tp2 or T2N are so controlled that their on-off relations are reversed.
JP7516481A 1981-05-19 1981-05-19 Semiconductor memory Granted JPS57189394A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7516481A JPS57189394A (en) 1981-05-19 1981-05-19 Semiconductor memory
US06/378,266 US4883986A (en) 1981-05-19 1982-05-14 High density semiconductor circuit using CMOS transistors
EP82302516A EP0066980B1 (en) 1981-05-19 1982-05-18 Semiconductor circuit
DE8282302516T DE3275613D1 (en) 1981-05-19 1982-05-18 Semiconductor circuit
US07/345,358 US5017994A (en) 1981-05-19 1989-05-01 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7516481A JPS57189394A (en) 1981-05-19 1981-05-19 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57189394A true JPS57189394A (en) 1982-11-20
JPS614194B2 JPS614194B2 (en) 1986-02-07

Family

ID=13568283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7516481A Granted JPS57189394A (en) 1981-05-19 1981-05-19 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57189394A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037764A (en) * 1983-08-10 1985-02-27 Nec Corp Fixed memory element matrix
JP2008104402A (en) * 2006-10-25 2008-05-08 Fulta Electric Machinery Co Ltd Laver-drying device aiming at effective utilization of exhaust heat
CN109149556A (en) * 2017-06-27 2019-01-04 通用电气航空***有限责任公司 Solid state electrical contactor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037764A (en) * 1983-08-10 1985-02-27 Nec Corp Fixed memory element matrix
JP2008104402A (en) * 2006-10-25 2008-05-08 Fulta Electric Machinery Co Ltd Laver-drying device aiming at effective utilization of exhaust heat
CN109149556A (en) * 2017-06-27 2019-01-04 通用电气航空***有限责任公司 Solid state electrical contactor

Also Published As

Publication number Publication date
JPS614194B2 (en) 1986-02-07

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