JPS57188826A - Acid-resistant wax for coating semiconductor substrate - Google Patents
Acid-resistant wax for coating semiconductor substrateInfo
- Publication number
- JPS57188826A JPS57188826A JP7544381A JP7544381A JPS57188826A JP S57188826 A JPS57188826 A JP S57188826A JP 7544381 A JP7544381 A JP 7544381A JP 7544381 A JP7544381 A JP 7544381A JP S57188826 A JPS57188826 A JP S57188826A
- Authority
- JP
- Japan
- Prior art keywords
- property
- wax
- paraffine
- shifted
- beeswax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000002253 acid Substances 0.000 title 1
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 abstract 3
- 235000011613 Pinus brutia Nutrition 0.000 abstract 3
- 241000018646 Pinus brutia Species 0.000 abstract 3
- 235000013871 bee wax Nutrition 0.000 abstract 3
- 239000012166 beeswax Substances 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 3
- 239000001993 wax Substances 0.000 abstract 3
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 230000003245 working effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To manufacture wax having excellent dissolving property to a solvent, mask property adhesive property and working property by mixing beeswax to paraffine and pine resin. CONSTITUTION:A region shown in oblique lines of the figure is a region proper as a mask in the case when the semiconductor substrate is etched by the mixed liquid of fluoric acid-nitric acid. Cracks are frequently generated due to thermal change when the region is shifted to the paraffine side, adhesive property degrades when it is shifted to the beeswax side, and elasticity is reduced when it is shifted to the pine resin side. The wax is manufactured by heating paraffine, beeswax and pine resi for thirty min, at 80 deg.C and mixing them, but it does not change even whenit is immersed in the liquid of HF: HNO3=1:20 for sixty hrs. Thirteen min. is required for generating pin holes even under a condition that ultrasonic waves are applied to said etching liquid, and the wax dies not change even through a heat shock test of which the operation of 0 deg.C 30 deg.C is repeated five times.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7544381A JPS57188826A (en) | 1981-05-18 | 1981-05-18 | Acid-resistant wax for coating semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7544381A JPS57188826A (en) | 1981-05-18 | 1981-05-18 | Acid-resistant wax for coating semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57188826A true JPS57188826A (en) | 1982-11-19 |
JPH0136252B2 JPH0136252B2 (en) | 1989-07-31 |
Family
ID=13576388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7544381A Granted JPS57188826A (en) | 1981-05-18 | 1981-05-18 | Acid-resistant wax for coating semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57188826A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0742000A (en) * | 1993-07-30 | 1995-02-10 | Kawasaki Steel Corp | Method for etching metal surface |
-
1981
- 1981-05-18 JP JP7544381A patent/JPS57188826A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0742000A (en) * | 1993-07-30 | 1995-02-10 | Kawasaki Steel Corp | Method for etching metal surface |
Also Published As
Publication number | Publication date |
---|---|
JPH0136252B2 (en) | 1989-07-31 |
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