JPS57188826A - Acid-resistant wax for coating semiconductor substrate - Google Patents

Acid-resistant wax for coating semiconductor substrate

Info

Publication number
JPS57188826A
JPS57188826A JP7544381A JP7544381A JPS57188826A JP S57188826 A JPS57188826 A JP S57188826A JP 7544381 A JP7544381 A JP 7544381A JP 7544381 A JP7544381 A JP 7544381A JP S57188826 A JPS57188826 A JP S57188826A
Authority
JP
Japan
Prior art keywords
property
wax
paraffine
shifted
beeswax
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7544381A
Other languages
Japanese (ja)
Other versions
JPH0136252B2 (en
Inventor
Kazuyoshi Kitamura
Goro Hagio
Masami Yokozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP7544381A priority Critical patent/JPS57188826A/en
Publication of JPS57188826A publication Critical patent/JPS57188826A/en
Publication of JPH0136252B2 publication Critical patent/JPH0136252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To manufacture wax having excellent dissolving property to a solvent, mask property adhesive property and working property by mixing beeswax to paraffine and pine resin. CONSTITUTION:A region shown in oblique lines of the figure is a region proper as a mask in the case when the semiconductor substrate is etched by the mixed liquid of fluoric acid-nitric acid. Cracks are frequently generated due to thermal change when the region is shifted to the paraffine side, adhesive property degrades when it is shifted to the beeswax side, and elasticity is reduced when it is shifted to the pine resin side. The wax is manufactured by heating paraffine, beeswax and pine resi for thirty min, at 80 deg.C and mixing them, but it does not change even whenit is immersed in the liquid of HF: HNO3=1:20 for sixty hrs. Thirteen min. is required for generating pin holes even under a condition that ultrasonic waves are applied to said etching liquid, and the wax dies not change even through a heat shock test of which the operation of 0 deg.C 30 deg.C is repeated five times.
JP7544381A 1981-05-18 1981-05-18 Acid-resistant wax for coating semiconductor substrate Granted JPS57188826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7544381A JPS57188826A (en) 1981-05-18 1981-05-18 Acid-resistant wax for coating semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7544381A JPS57188826A (en) 1981-05-18 1981-05-18 Acid-resistant wax for coating semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS57188826A true JPS57188826A (en) 1982-11-19
JPH0136252B2 JPH0136252B2 (en) 1989-07-31

Family

ID=13576388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7544381A Granted JPS57188826A (en) 1981-05-18 1981-05-18 Acid-resistant wax for coating semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57188826A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0742000A (en) * 1993-07-30 1995-02-10 Kawasaki Steel Corp Method for etching metal surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0742000A (en) * 1993-07-30 1995-02-10 Kawasaki Steel Corp Method for etching metal surface

Also Published As

Publication number Publication date
JPH0136252B2 (en) 1989-07-31

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