CN104078352B - Method for cleaning wafer and wafer cleaning device - Google Patents
Method for cleaning wafer and wafer cleaning device Download PDFInfo
- Publication number
- CN104078352B CN104078352B CN201310103214.7A CN201310103214A CN104078352B CN 104078352 B CN104078352 B CN 104078352B CN 201310103214 A CN201310103214 A CN 201310103214A CN 104078352 B CN104078352 B CN 104078352B
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- Prior art keywords
- wafer
- deionized water
- copper liquid
- cleaning
- copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention proposes a kind of method for cleaning wafer and wafer cleaning device, deionized water with heat is provided, the deionized water mix heat of the heat of generation with the deionized water in itself and can improve the efficiency that the quarter copper liquid is performed etching to the layers of copper on the crystal round fringes surface with the quarter copper liquid, so as to quickly remove the layers of copper on the crystal round fringes surface, avoid it is described quarter copper liquid coat for a long time, can with described in effectively preventing carve copper liquid be sputtered onto the wafer center You Tong areas formed defect.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of method for cleaning wafer and wafer cleaning device.
Background technology
In the manufacturing process of integrated circuit, some of them technique needs to crystal column surface copper plate, for example, to make copper mutual
The techniques such as line.However, the mark originally exposed to crystal round fringes after copper plate cannot be also identified by layers of copper covering,
When chemical mechanical milling tech removal part layers of copper is carried out to wafer, because the technique of chemical mechanical milling tech is limited, nothing
The layers of copper at method grinding crystal wafer edge, the mark for also resulting in crystal round fringes cannot be exposed, so cause different wafers it
Between cannot be distinguished by.
Accordingly, it would be desirable to be cleaned to crystal round fringes, the layers of copper of wafer mark is sheltered to remove.Generally, using temperature
Cold water less than 10 degree comes to crystal round fringes cleaning with copper liquid mixture is carved.However, found in actual production process, in wafer
Edge easily forms defect, influences the yield of device.
The content of the invention
It is an object of the invention to provide a kind of method for cleaning wafer and device, to avoid forming defect during cleaning wafer.
To achieve these goals, the present invention proposes a kind of method for cleaning wafer, including：
Wafer is provided；
To the edge surface spraying deionized water and quarter copper liquid of the wafer；
Wherein, the temperature range of the deionized water is more than 15 degree.
Further, in described method for cleaning wafer, the temperature range of the deionized water is 15 degree~25 degree.
Further, in described method for cleaning wafer, the deionized water supply scope is 100 milliliters~200
Milliliter.
Further, in described method for cleaning wafer, the flow rates of the deionized water are 5 milliliters/second~20
Milliliters/second.
Further, in described method for cleaning wafer, the quarter copper liquid is made up of sulfuric acid and hydrogen peroxide.
Further, in described method for cleaning wafer, the sulfuric acid is 1.5 with the volume range of hydrogen peroxide:1~
3:1。
Further, in described method for cleaning wafer, the sulfuric acid is 10 milliliters with the supply scope of hydrogen peroxide
~14 milliliters.
Further, in described method for cleaning wafer, the flow rates of the sulfuric acid and hydrogen peroxide are 0.6 milliliter/
Second~0.8 milliliters/second.
Further, in described method for cleaning wafer, deionized water and quarter are sprayed to the edge surface of the wafer
During copper liquid, the wafer average rate rotation.
Further, in described method for cleaning wafer, the range of speeds of the wafer is 400~600 revs/min.
A kind of another side of the invention, it is also proposed that wafer cleaning device, is entered using any of the above-described kind of method to wafer
Row cleaning, the wafer cleaning device includes：
Deionized water feeding unit；
Carve copper liquid feeding unit；
Injection pump；
Nozzle；
Deionized water supply line, connects the deionized water feeding unit, injection pump and nozzle；
Copper liquid supply line is carved, the quarter copper liquid feeding unit, injection pump and nozzle is connected.
Compared with prior art, the beneficial effects are mainly as follows：Deionized water of the temperature more than 15 degree is provided,
The deionized water mix heat of the heat of generation with the deionized water in itself with the quarter copper liquid can be improved
It is described to carve the efficiency that copper liquid is performed etching to the layers of copper on the crystal round fringes surface such that it is able to quickly to remove the wafer side
The layers of copper on edge surface, it is to avoid the quarter copper liquid is coated for a long time, can effectively prevent the quarter copper liquid to be sputtered onto the crystalline substance
Round center You Tong areas form defect.
Brief description of the drawings
Fig. 1 is top view in the prior art after wafer cleaning；
Fig. 2 is the structural representation of wafer cleaning device in one embodiment of the invention；
Fig. 3 is the top view after wafer cleaning in one embodiment of the invention.
Specific embodiment
Below in conjunction with the drawings and specific embodiments method for cleaning wafer proposed by the present invention and wafer cleaning device are made into
One step is described in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that,
Accompanying drawing in the form of simplifying very much and uses non-accurately ratio, is only used to convenience, lucidly aids in illustrating the present invention
The purpose of embodiment.
In the introduction it has been already mentioned that cold water（Less than 10 degree）When spraying to crystal round fringes surface with quarter copper liquid mixture,
In the You Tong areas 30 of crystal circle center（As shown in Figure 1）Place easily forms defect 31, is studied for a long period of time discovery through present inventor, it
It is the layers of copper that copper liquid and crystal round fringes are carved because cold water is relatively low with the temperature for carving copper liquid mixture so there is this defect 31
Reaction efficiency is low, and the layers of copper in order to remove crystal round fringes completely is formed without copper area 10（As shown in Figure 1）, it has to increase
The spray time and quantity for spray of copper liquid are carved, the You Tong areas 30 for causing the quarter copper liquid to be sputtered onto crystal circle center are so also easy for,
So as to form defect at the You Tong areas 30 of crystal circle center, the yield of device is influenceed.Also, the You Tong areas 30 of crystal circle center with
Crystal round fringes without often had between copper area 10 residual not being etched layers of copper formed transition region 20, the transition region 20
Area it is excessive, can also increase the probability of copper diffusion in subsequent technique.
Therefore, the present embodiment proposes a kind of method for cleaning wafer, including：Wafer is provided；And to the edge of the wafer
Surface spraying deionized water and quarter copper liquid；The temperature range of the deionized water is more than 15 degree.Due to carving copper liquid and deionized water
Heat can be produced during mixing, when carving copper liquid and deionized water and together coating the edge surface to the wafer, due to temperature
Rising, can carry quarter copper liquid to the reaction efficiency of the edge surface layers of copper of wafer, can not only more quickly remove the crystalline substance
The layers of copper of round edge surface is formed without copper area 100, moreover it is possible to reduce the area of the transition region 200 for being formed.
Preferably, the temperature of the deionized water is 15 degree~25 degree, e.g. 20 degree, so when the deionized water and
The temperature that the quarter copper liquid is produced when mixing will not be too high, it is to avoid has extra injury to wafer.
Wherein, the deionized water supply scope is 100 milliliters~200 milliliters, e.g. 150 milliliters.The quarter copper
Liquid is for example made up of sulfuric acid and hydrogen peroxide, and the sulfuric acid is 1.5 with the volume range of hydrogen peroxide:1~3:1, e.g. 2：1,
I.e. sulfuric acid accounts for 2 parts, and hydrogen peroxide accounts for 1 part.The supply scope of the sulfuric acid and hydrogen peroxide is 10 milliliters~14 milliliters, e.g. 12
Milliliter.
Preferably, the flow rates of the deionized water are 5 milliliters/second~20 milliliters/seconds, e.g. 10 milliliters/seconds.Institute
The flow rates for stating sulfuric acid and hydrogen peroxide are 0.6 milliliters/second~0.8 milliliters/second, e.g. 0.7 milliliters/second, thus, it is described to go
The overall flow rate of ionized water and quarter copper liquid is less than 21 milliliters/seconds, the overall flow rate of the deionized water and quarter copper liquid is set to above-mentioned
Relatively low speed, it can be ensured that the mixture of the deionized water and quarter copper liquid is not easy to be sputtered onto the You Tong areas of the crystal circle center
300, the formation of defect can be further avoided, as shown in Figure 3.
Certainly, the quarter copper liquid can also be the flow of other conventional copper etching liquids, the deionized water and quarter copper liquid
Can also be changed according to actual conditions adaptability etc. parameter.
Preferably, in the present embodiment, the wafer is fixed by electronics chuck, and the electronics chuck can drive wafer to enter
The rotation of row center average rate, the range of speeds of the wafer is 400~600 revs/min, e.g. 500 revs/min；When described
When the quarter copper liquid is sprayed to the edge surface of the wafer by nozzle, the rotation of average rate is capable of due to the wafer, then the quarter
Copper liquid just can uniformly be coated in the edge surface of the wafer such that it is able to which the layers of copper to the crystal round fringes surface is carried out
Uniform reaction.
A kind of wafer cleaning device is also proposed in the present embodiment, as shown in Fig. 2 being carried out clearly to wafer using the above method
Wash, including：Deionized water feeding unit, quarter copper liquid feeding unit, injection pump, nozzle, deionized water supply line 400 and quarter
Copper liquid supply line 500；The deionized water supply line 400 connects the deionized water feeding unit, injection pump and spray
Mouth；The quarter copper liquid supply line 500 connects the quarter copper liquid feeding unit, injection pump and nozzle.
Preferably, the wafer cleaning device is used most preferably, because wafer is most pushed up after the formation of wafer top layers of copper
The thickness of layer layers of copper is last, cleaning dirty problem easily occurs, however, those skilled in the art can predict the present invention can
Used according to different demands and all may be used in different layers of copper.The wafer cleaning device is when in use：The deionized water feeding unit
Deionized water is provided to be transmitted into the nozzle by the deionized water supply line 400 and the injection pump；The quarter
Copper liquid feeding unit is provided to be carved copper liquid and is transmitted to the nozzle by the quarter copper liquid supply line 500 and the injection pump
In；The deionized water mixes with the quarter copper liquid in the nozzle, and by the nozzle application to the crystal round fringes
Surface.
To sum up, in method for cleaning wafer provided in an embodiment of the present invention and device, due to the deionized water for providing
Mix in the nozzle with the quarter copper liquid, when the heat of the deionized water and the deionized water mix with quarter copper liquid
Produced heat can accelerate the quarter efficiency reacted the layers of copper of the crystal round fringes of copper liquid, and it is described go from
The flow velocity of sub- water and quarter copper liquid is relatively low, does not result in quarter copper liquid and is sputtered onto the You Tong areas of the wafer so as to cause defect.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Belonging to any
Those skilled in the art, not departing from the range of technical scheme, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (10)
1. a kind of method for cleaning wafer, including：
Wafer is provided；
To the edge surface spraying deionized water and quarter copper liquid of the wafer；
Wherein, the temperature range of the deionized water is more than 15 degree；The overall flow rate of the deionized water and quarter copper liquid is less than 21 millis
Liter/the second.
2. method for cleaning wafer as claimed in claim 1, it is characterised in that the temperature range of the deionized water is 15 degree~
25 degree.
3. method for cleaning wafer as claimed in claim 1, it is characterised in that the deionized water supply scope is 100 millis
Rise~200 milliliters.
4. method for cleaning wafer as claimed in claim 3, it is characterised in that the flow rates of the deionized water are 5 milliliters/
Second~20 milliliters/seconds.
5. method for cleaning wafer as claimed in claim 1, it is characterised in that the quarter copper liquid is made up of sulfuric acid and hydrogen peroxide.
6. method for cleaning wafer as claimed in claim 5, it is characterised in that the sulfuric acid is with the volume range of hydrogen peroxide
1.5:1~3:1.
7. method for cleaning wafer as claimed in claim 5, it is characterised in that the sulfuric acid is with the supply scope of hydrogen peroxide
10 milliliters~14 milliliters.
8. method for cleaning wafer as claimed in claim 7, it is characterised in that the sulfuric acid is with the flow rates of hydrogen peroxide
0.6 milliliters/second~0.8 milliliters/second.
9. method for cleaning wafer as claimed in claim 1, it is characterised in that spray deionization to the edge surface of the wafer
When water and quarter copper liquid, the wafer average rate rotation.
10. method for cleaning wafer as claimed in claim 9, it is characterised in that the range of speeds of the wafer is 400~600
Rev/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310103214.7A CN104078352B (en) | 2013-03-27 | 2013-03-27 | Method for cleaning wafer and wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310103214.7A CN104078352B (en) | 2013-03-27 | 2013-03-27 | Method for cleaning wafer and wafer cleaning device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104078352A CN104078352A (en) | 2014-10-01 |
| CN104078352B true CN104078352B (en) | 2017-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310103214.7A Active CN104078352B (en) | 2013-03-27 | 2013-03-27 | Method for cleaning wafer and wafer cleaning device |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799393A (en) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | A kind of cleaning method of semiconductor crystal wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5897379A (en) * | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
| CN1267904A (en) * | 1999-03-15 | 2000-09-27 | 日本电气株式会社 | Etching and cleaning method and using equipment for etching and cleaning |
| JP2001129495A (en) * | 1999-08-25 | 2001-05-15 | Shibaura Mechatronics Corp | Treating method of substrate and device therefor |
| CN1425802A (en) * | 2003-01-02 | 2003-06-25 | 上海华虹（集团）有限公司 | Method for wet cleaning metal copper back |
| CN1581444A (en) * | 2003-08-08 | 2005-02-16 | 东部电子股份有限公司 | Method and apparatus for manufacturing semiconductor devices |
-
2013
- 2013-03-27 CN CN201310103214.7A patent/CN104078352B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5897379A (en) * | 1997-12-19 | 1999-04-27 | Sharp Microelectronics Technology, Inc. | Low temperature system and method for CVD copper removal |
| CN1267904A (en) * | 1999-03-15 | 2000-09-27 | 日本电气株式会社 | Etching and cleaning method and using equipment for etching and cleaning |
| JP2001129495A (en) * | 1999-08-25 | 2001-05-15 | Shibaura Mechatronics Corp | Treating method of substrate and device therefor |
| CN1425802A (en) * | 2003-01-02 | 2003-06-25 | 上海华虹（集团）有限公司 | Method for wet cleaning metal copper back |
| CN1581444A (en) * | 2003-08-08 | 2005-02-16 | 东部电子股份有限公司 | Method and apparatus for manufacturing semiconductor devices |
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| Publication number | Publication date |
|---|---|
| CN104078352A (en) | 2014-10-01 |
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