JPS57180133A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57180133A JPS57180133A JP6553881A JP6553881A JPS57180133A JP S57180133 A JPS57180133 A JP S57180133A JP 6553881 A JP6553881 A JP 6553881A JP 6553881 A JP6553881 A JP 6553881A JP S57180133 A JPS57180133 A JP S57180133A
- Authority
- JP
- Japan
- Prior art keywords
- spraying method
- plasma jet
- insulation film
- flame spraying
- jet flame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 4
- 238000010285 flame spraying Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To form a thick cover insulation film at low temperature in a shor time by covering the surface of a functional element containing wiring by the cover insulation film formed by plasma jet flame spraying method. CONSTITUTION:A functional element such as MIS transistor 8 is covered by a cover insulation film 15 formed by plasma jet flame spraying method. The temperature of a treated substrate rises only about 10-100 deg.C and accumulation speed is also very high with this plasma jet flame spraying method, so that thick insulation layer can be accumulated and formed without generation of hillock in Al wiring and diffusion of Al into a semiconductor layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6553881A JPS57180133A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6553881A JPS57180133A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57180133A true JPS57180133A (en) | 1982-11-06 |
JPS6322455B2 JPS6322455B2 (en) | 1988-05-12 |
Family
ID=13289886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6553881A Granted JPS57180133A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57180133A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006266500A (en) * | 2005-03-24 | 2006-10-05 | Leica Microsystems (Schweiz) Ag | Fixing device for fixing component transmitting object vibration |
-
1981
- 1981-04-30 JP JP6553881A patent/JPS57180133A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006266500A (en) * | 2005-03-24 | 2006-10-05 | Leica Microsystems (Schweiz) Ag | Fixing device for fixing component transmitting object vibration |
Also Published As
Publication number | Publication date |
---|---|
JPS6322455B2 (en) | 1988-05-12 |
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