JPS57172764A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS57172764A
JPS57172764A JP5700181A JP5700181A JPS57172764A JP S57172764 A JPS57172764 A JP S57172764A JP 5700181 A JP5700181 A JP 5700181A JP 5700181 A JP5700181 A JP 5700181A JP S57172764 A JPS57172764 A JP S57172764A
Authority
JP
Japan
Prior art keywords
film
layer
contact layer
mask
lead out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5700181A
Other languages
Japanese (ja)
Other versions
JPH0123951B2 (en
Inventor
Seiichi Takahashi
Yoshiaki Sano
Katsuzo Uenishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP5700181A priority Critical patent/JPS57172764A/en
Publication of JPS57172764A publication Critical patent/JPS57172764A/en
Publication of JPH0123951B2 publication Critical patent/JPH0123951B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce the area of a contact layer, by opening an ion implanting window in one sheet of a mask, forming the contact layer and a second operating layer, and connecting the contact layer to electrode metal by a lead out conductive layer. CONSTITUTION:An Si3N4 film 22 with a specified pattern is provided on a semiconductor substrate 21, selective oxidation is performed with the film 22 as a mask, and a thick SiO2 film 23 is formed at the peripheral part of the substrate 21. Then, the film 22 is removed, a polycrystalline film 24 is deposited on the entire surface, and the Si3N4 film having the specified pattern is again provided on the film 24. With a film 22 as a mask, the exposed part of the film 24 is selectively oxidized, and the window for forming the contact layer and the second operating layer is opened. Thereafter only 22-1 of the film 22 is left, and a polycrystal Si layer 25 which is to become the lead out layer is deposited again, and the contact layer 26 is formed by the ion implantation and the like. Then the film 22-1 are removed, and only the lead out conductive layer 25-2 is left. A first operation layer 27 is formed by the implantation and the second operating layer 29 is formed in the layer 27.
JP5700181A 1981-04-17 1981-04-17 Manufacture of semiconductor element Granted JPS57172764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5700181A JPS57172764A (en) 1981-04-17 1981-04-17 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5700181A JPS57172764A (en) 1981-04-17 1981-04-17 Manufacture of semiconductor element

Publications (2)

Publication Number Publication Date
JPS57172764A true JPS57172764A (en) 1982-10-23
JPH0123951B2 JPH0123951B2 (en) 1989-05-09

Family

ID=13043235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5700181A Granted JPS57172764A (en) 1981-04-17 1981-04-17 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS57172764A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149055A (en) * 1983-02-12 1984-08-25 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Method of producing bipolar planar transistor
JPS6057667A (en) * 1983-09-08 1985-04-03 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60119775A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device
JPS60145659A (en) * 1984-01-10 1985-08-01 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS63182860A (en) * 1987-01-26 1988-07-28 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149055A (en) * 1983-02-12 1984-08-25 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Method of producing bipolar planar transistor
JPS6057667A (en) * 1983-09-08 1985-04-03 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60119775A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device
JPH0580818B2 (en) * 1983-12-02 1993-11-10 Hitachi Ltd
JPS60145659A (en) * 1984-01-10 1985-08-01 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS63182860A (en) * 1987-01-26 1988-07-28 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0123951B2 (en) 1989-05-09

Similar Documents

Publication Publication Date Title
GB1527894A (en) Methods of manufacturing electronic devices
JPS5748246A (en) Manufacture of semiconductor device
JPS57172764A (en) Manufacture of semiconductor element
JPS55157241A (en) Manufacture of semiconductor device
JPS54141585A (en) Semiconductor integrated circuit device
JPS5772333A (en) Manufacture of semiconductor device
JPS56147434A (en) Manufacture of semiconductor device
JPS5766672A (en) Semiconductor device
JPS57155772A (en) Manufacture of semiconductor device
GB2160360A (en) Method of fabricating solar cells
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS5530845A (en) Method for manufacturing fixed memory
JPS55120170A (en) Mos type semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS53131770A (en) Production of semiconductor device
JPS56126957A (en) Manufacture of semiconductor device
JPS5780776A (en) Mos field effect semiconductor device and manufacture thereof
JPS56148825A (en) Manufacture of semiconductor device
JPS57106076A (en) Manufacture of semiconductor integrated circuit device
JPS5267962A (en) Manufacture of semiconductor unit
JPS6413762A (en) Manufacture of solid-state image sensing device
JPS5717129A (en) Manufacture of semiconductor device
JPS56152234A (en) Manufacture of semiconductor device
JPS5691476A (en) Semiconductor
JPS54107272A (en) Production of semiconductor device