JPS5717170A - Epitaxial type transistor and manufacture thereof - Google Patents

Epitaxial type transistor and manufacture thereof

Info

Publication number
JPS5717170A
JPS5717170A JP9184880A JP9184880A JPS5717170A JP S5717170 A JPS5717170 A JP S5717170A JP 9184880 A JP9184880 A JP 9184880A JP 9184880 A JP9184880 A JP 9184880A JP S5717170 A JPS5717170 A JP S5717170A
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
type
epitaxial
extremely low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9184880A
Other languages
Japanese (ja)
Other versions
JPS6360552B2 (en
Inventor
Chukei Kaneko
Yuichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP9184880A priority Critical patent/JPS5717170A/en
Publication of JPS5717170A publication Critical patent/JPS5717170A/en
Publication of JPS6360552B2 publication Critical patent/JPS6360552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To lower loss voltage in a saturation region, by employing epitaxial type transistor structure which is capable of reducing series resistance applied toward collector side. CONSTITUTION:In a circumferential section of an N type high specific resistance epitaxial layer 2 consisting of a part of a collector region, a region 9 having an extremely low specific resistance and the same electric conduction type as the collector region (epitaxial layer) is formed in the position kept away from outside surface of a P type base region by a distance l equal to thickness of an epitaxial layer 8. And, when impurities contained in the region 9 and a silicon substrate 1 are cut away by high temperature of laser, redispersion takes place to form along surface of the laser cut groove a layer 11 whose resistance is extremely low.
JP9184880A 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof Granted JPS5717170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9184880A JPS5717170A (en) 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9184880A JPS5717170A (en) 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5717170A true JPS5717170A (en) 1982-01-28
JPS6360552B2 JPS6360552B2 (en) 1988-11-24

Family

ID=14037985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9184880A Granted JPS5717170A (en) 1980-07-04 1980-07-04 Epitaxial type transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5717170A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056701U (en) * 1983-09-27 1985-04-20 株式会社アシックス socks

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119313A (en) * 1974-08-08 1976-02-16 Takawaki Kiso Koji Kk Kisokojokuitono oshikomihoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119313A (en) * 1974-08-08 1976-02-16 Takawaki Kiso Koji Kk Kisokojokuitono oshikomihoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056701U (en) * 1983-09-27 1985-04-20 株式会社アシックス socks
JPS6344401Y2 (en) * 1983-09-27 1988-11-18

Also Published As

Publication number Publication date
JPS6360552B2 (en) 1988-11-24

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