JPS63143877A - Amorphous solar cell - Google Patents
Amorphous solar cellInfo
- Publication number
- JPS63143877A JPS63143877A JP61290416A JP29041686A JPS63143877A JP S63143877 A JPS63143877 A JP S63143877A JP 61290416 A JP61290416 A JP 61290416A JP 29041686 A JP29041686 A JP 29041686A JP S63143877 A JPS63143877 A JP S63143877A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- film
- solar cell
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 46
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 239000013081 microcrystal Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 55
- 239000000203 mixture Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、アモルファス太陽電池に係り、特に大きな開
放電圧を有する高効率化せしめるに好適なアモルファス
太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an amorphous solar cell, and particularly to an amorphous solar cell having a large open-circuit voltage and suitable for achieving high efficiency.
従来、ｐ型ａ−８ｉＣ：Ｈ膜を用いたｐｉｎ型セルにお
いて、ヘテロ接合部であるｐ／ｉ界面にバッファ層を設
けることにより−ｐ／ｉ界面テ界面キノキャリア再結合
、および２層とｉ層のバンド幅が連続的につながって障
壁が緩和されることにより光電変換効率が向することが
知られている（第１７回太陽エネルギー推進委員会第１
１回アモルファス連絡会予稿集、第１９４〜５頁参照）
。Conventionally, in a pin cell using a p-type a-8iC:H film, by providing a buffer layer at the p/i interface, which is a heterojunction, the recombination of kinocarriers at the -p/i interface and the two-layer It is known that the photoelectric conversion efficiency increases as the i-layer band width is continuously connected and the barrier is relaxed (17th Solar Energy Promotion Committee Vol. 1).
(See Proceedings of the 1st Amorphous Liaison Conference, pages 194-5)
.
また、ｐ型ａ−８ｉとｉ型ｐ−ＳｉＧｅによるヘテロ接
合を有する太陽電池に関しては、ｐ／ｉ界面にＧｅ量を
厚さ方向に連続的変化させて光学ギャップ（禁制帯幅）
を９層側からｉ層側へ変化させるようにバッファ層を設
けてバンド幅を連続的につなぎ、障壁を緩和する方法が
ある（第４６回応用物理学会学術講演会講演予稿集、２
Ｐ−ＺＡ−５参照）、なおこの場合の光電変換効率は２
，３％、開放電圧は０．６５Ｖ程度である。In addition, for solar cells having a heterojunction of p-type a-8i and i-type p-SiGe, the amount of Ge at the p/i interface is continuously changed in the thickness direction to increase the optical gap (forbidden band width).
There is a method to alleviate the barrier by providing a buffer layer to change the bandwidth from the 9th layer side to the i layer side and connect the bandwidth continuously (Proceedings of the 46th Japan Society of Applied Physics Conference, 2)
P-ZA-5), and the photoelectric conversion efficiency in this case is 2
, 3%, and the open circuit voltage is about 0.65V.
太陽電池の主光電変換部であるｉ型ａ−ＳｉＧｅ膜の光
学的バンドギャップは、１．４〜１．６ｅＶ程度である
。この値から、前記の太陽電池の開放電圧は充分に大き
いとは言えず、さらに増大できる可能性を含んでいると
考えられる。The optical bandgap of the i-type a-SiGe film, which is the main photoelectric conversion part of the solar cell, is about 1.4 to 1.6 eV. From this value, it cannot be said that the open circuit voltage of the solar cell is sufficiently large, and it is considered that there is a possibility that it can be further increased.
本発明の目的は、開放電圧が大きく、光電変換効率の高
いアモルファス太陽電池を提供することにある。An object of the present invention is to provide an amorphous solar cell with a high open-circuit voltage and high photoelectric conversion efficiency.
上記の目的は、Ｐ型ａ−８ｉＣ／ｉ型ａ−８ｉＧｅ／ｎ
型μＣ（マイクロクリスタル） −Ｓ Ｊ系アモルファ
ス太陽電池のへテロ接合を形成するｐ ／ ｉ界面のバ
ッファ層としてｐｍ及びｉ層に共通した１つの主要元素
であるＳｉからなるｉ型ａ −Ｓ ｊ薄膜または、２層
及びｉ層を摺成する３つの主要元素であるＳｉ、Ｃ５及
びＧｅからなるｉ型ａ−８ｉＣＧｅ薄膜を少なくとも１
層用いることにより達成される。The above purpose is to
Type μC (microcrystal) -S J As a buffer layer at the p/i interface that forms the heterojunction of a J-based amorphous solar cell, an i-type a-S j consisting of Si, which is one main element common to the PM and i layers. At least one i-type a-8iCGe thin film consisting of Si, C5 and Ge, which are the three main elements forming the two-layer and i-layer, is
This is achieved by using layers.
これらのバッファ層が、Ｐ型ａ−８ｉＣ／ｉ型ａ−８ｉ
Ｇｅ接合のバンドの連続性を改善することにより、特に
伝導帯側を連続的につなぐことによりｐ／ｉ界而の面壁
を緩和することができ、かつ界面再結合速度を減少させ
、開放電圧の拡大をもたらす、バッファ層としてｉ型ａ
−５ｉｉｌ膜を用いた場合は、バッファ層の光学的バン
ドギャップをｐ型ａ −Ｓ ｉ Ｃ膜のバンドギャップ
より大きくすることは困難であるが、バッファ層にｉ型
ａ−８ｉＣＧｅ薄膜を用いた場合は、その組成を調整す
ることによりｐ型ａ−５ｉＣ膜より大きいバンドギャッ
プを有するａ−ＳｉＣＧｅ薄膜の作成は容易であり、さ
らにｐ型ａ−ＳｉＣ膜のバンドギャップよりも小さくす
ることも可能である。さらにａ−８ｉＣＧｅ膜において
は、ａ−８ｉＣＧｅ膜の組成を適切に選択することによ
り、組成が違っても同じ光学的バンドギャップを有する
膜の作成が可能であり、このため同じバンドギャップを
有する膜であっても電子親和力の異なる膜が形成される
ので開放電圧を大きくし得る。These buffer layers are P type a-8iC/i type a-8i
By improving the band continuity of the Ge junction, especially by continuously connecting the conduction band side, it is possible to relax the plane wall of the p/i interface, reduce the interfacial recombination rate, and increase the open circuit voltage. I-type a as a buffer layer that causes expansion
When using a -5iI film, it is difficult to make the optical bandgap of the buffer layer larger than that of a p-type a-SiC film, but it is difficult to make the optical bandgap of the buffer layer larger than that of a p-type a-SiC film. In this case, it is easy to create an a-SiCGe thin film with a band gap larger than that of the p-type a-5iC film by adjusting its composition, and it is also possible to make the band gap smaller than that of the p-type a-SiC film. It is. Furthermore, in the a-8iCGe film, by appropriately selecting the composition of the a-8iCGe film, it is possible to create a film with the same optical bandgap even if the composition is different; therefore, a film with the same bandgap can be created. However, since films with different electron affinities are formed, the open circuit voltage can be increased.
バッファ層はａ−５ｉ薄膜またはａ−ＳｉＣＱｅ薄膜の
一層だけでなく、同種類の膜で順次２層側からｉｙＢ側
へバンドギャップが漸減するよう組成を調整した膜を連
続的にあるいは積層することにより開放電圧の拡大が図
られる。この場合、バッファ層ではバンドギャップの傾
斜により拡散電位が生じ、ｐ／ｉ界面でのキャリアの再
結合を減少させる様な作用が働いている。また、バッフ
ァ層にａ−ＳｉＣＧ膜を用いたアモルファス太陽電池で
は、同一のバンドギャップを有し、かつ組成が異なる薄
膜を積層しても拡散電位は得られる。この場合は電子親
和力の差に起因した拡散電位が生じ、同様に開放電圧の
拡大が図られた。The buffer layer is not only a single layer of a-5i thin film or a-SiCQe thin film, but also a continuous or stacked film of the same type whose composition is adjusted so that the band gap gradually decreases from the second layer side to the iyB side. As a result, the open circuit voltage can be expanded. In this case, a diffusion potential is generated in the buffer layer due to the inclination of the band gap, which acts to reduce carrier recombination at the p/i interface. Furthermore, in an amorphous solar cell using an a-SiCG film as a buffer layer, a diffusion potential can be obtained even if thin films having the same bandgap and different compositions are stacked. In this case, a diffusion potential was generated due to the difference in electron affinity, and the open-circuit voltage was similarly expanded.
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
実施例１゜
第１図を用いて説明する。まずガラス基板１１上に透明
導電［１２を周知の方法で形成した。この上に、Ｓ ｉ
Ｈ４＊ ＣＨ４ｖ Ｈ２ベース８２Ｈ１！の混合ガスの
高周波プラズマ分解法を用いて膜厚８０人のｐ型ａ−８
ｉＣ膜１３を形成する。その上にバッファ層として膜１
３よりも光学的バンドギャップの小さい膜厚８０人のｉ
型ａ−８ｉ膜１４を形成した。該バッファ層は、ＳｉＨ
４およびＨ２の混合ガスから成膜した。さらに、この上
に膜厚５，０００人のｉ型ａ −ＳｉＧｅ［ＩＩＩ １
５ 、膜厚２００人のｎ型微結晶５ｉｌｉｌ１６を順次
形成し、最後にＡｇ電極１７を蒸着して太陽電池を作成
した。この太陽電池の開放電圧は０．７１Ｖと高い値を
示し、光電変換効率６．２％であった。Example 1 This will be explained using FIG. First, a transparent conductive film [12] was formed on a glass substrate 11 by a well-known method. On top of this, S i
H4* CH4v H2 base 82H1! p-type A-8 with a film thickness of 80 mm using high-frequency plasma decomposition of a mixed gas of
An iC film 13 is formed. On top of that is a film 1 as a buffer layer.
Film thickness of 80 people with smaller optical bandgap than 3
A type a-8i film 14 was formed. The buffer layer is made of SiH
The film was formed using a mixed gas of 4 and H2. Furthermore, on top of this, a film of i-type a-SiGe [III 1
5. N-type microcrystals 5ilil16 with a film thickness of 200 nm were sequentially formed, and finally an Ag electrode 17 was deposited to create a solar cell. The open circuit voltage of this solar cell was as high as 0.71 V, and the photoelectric conversion efficiency was 6.2%.
実施例２゜ 第２図を用いて説明する。Example 2゜ This will be explained using FIG.
第２図の例はバッファ層２４の材料が第１の実施例と異
なるのみで、他はこれと同様である。バッファ層２４と
して、膜厚１００人のｉ型ａ−８ｉ ＣＧ ｅ膜を、Ｓ
ＩＨ４ｅ ＣＨ４ｇ ＧａＨ４及びＨ２の混合ガスの高
周波プラズマ分解法により形成した。バッファ１１２４
の光学的バンドギャップはｐ型ａ −Ｓ ｉ Ｃｌ！！
Ｉｌ ３のバンドギャップより小さく、ｉ型ａ−３ｉＧ
ｅ膜１５のバンドギャップより大きい６本太陽電池の開
放電圧は０．７ｖと高い値を示し、光電変換効率は６．
０％であった。The example shown in FIG. 2 is the same as the first example except for the material of the buffer layer 24. As the buffer layer 24, an i type a-8i CG e film with a thickness of 100 mm is
IH4e CH4g Formed by high frequency plasma decomposition of a mixed gas of GaH4 and H2. buffer 1124
The optical bandgap of p-type a-S i Cl! !
smaller than the bandgap of Il 3, i-type a-3iG
The open circuit voltage of the six solar cells, which is larger than the band gap of the e-film 15, is as high as 0.7V, and the photoelectric conversion efficiency is 6.
It was 0%.
実施例３゜ 第３図を用いて説明する。Example 3゜ This will be explained using FIG.
上記実施例２においては、バッファ層２４は。In the second embodiment, the buffer layer 24 is as follows.
ｐ層よりバンドギャップが小さいｉ型層 −ＳｉＣＧｅ
膜としたが、本実施例では、バッファ層３４であるｉ型
層−８ｉＣＧｅ膜のバンドギャップはｐ層のバンドギャ
ップよりも大きくした。バッフｙＦａ３４以外は全て実
施例２と同じ構造である。I-type layer with a smaller band gap than the p-layer -SiCGe
However, in this example, the bandgap of the i-type layer-8iCGe film, which is the buffer layer 34, was made larger than the bandgap of the p-layer. Everything except the buffer yFa34 has the same structure as the second embodiment.
この太陽電池の開放電圧は０．７５Ｖと高い値を示し、
光電変換効率は６．１％であった。The open circuit voltage of this solar cell is as high as 0.75V,
Photoelectric conversion efficiency was 6.1%.
実施例４゜ 第４図を用いて説明する。Example 4゜ This will be explained using FIG.
本実施例では、バッファ層が２層（第１層目４４および
第２層目５４）で構成されており、バッファ層以外は全
て実施例３と同じ構造である。In this example, the buffer layer is composed of two layers (first layer 44 and second layer 54), and everything except the buffer layer has the same structure as Example 3.
バッファ層の第１層目４４（膜厚５０λ）と第２層目５
４ （膜厚５０λ）は同じ光学的バンドギャップを有す
るｉ型層−ＳｉＣＧｅ膜とし、 ａ −ＳｉＣＧｅ膜
の組成を調整して、膜の電子親和力に差を設けて第１層
目４４よりも第２層目５４の方が大きい電子親和力を有
するようにした。バッファ層４４及び５４のバンドギャ
ップはｐ型層 −８ｉＣ膜のバンドギャップよりも小さ
い。本太陽電池の開放電圧は０．７３Ｖと高い値を示し
、光電変換効率は６．０％であった。The first layer 44 (film thickness 50λ) and the second layer 5 of the buffer layer
4 (film thickness 50λ) is an i-type layer-SiCGe film having the same optical band gap, and the composition of the a-SiCGe film is adjusted to create a difference in the electron affinity of the film so that the The second layer 54 was made to have a larger electron affinity. The band gaps of the buffer layers 44 and 54 are smaller than the band gap of the p-type layer -8iC film. The open circuit voltage of this solar cell was as high as 0.73 V, and the photoelectric conversion efficiency was 6.0%.
なお１本発明において、ｎ型層はなるべく抵抗の低い周
知の半導体層でよく、その膜厚は２００〜５００人であ
る。ｉ型層の組成は、そのバンドギャップが１．３〜１
．７ｅＶになるように選択され、膜厚は３，０００〜７
，０００λである。ｐ型層の組成は、そのバンドギャッ
プが１．８〜２．５ ｅＶになるように選択され
る。バッファ層とｐ型層の膜厚は、その和が５０〜２０
０人になるように選択される。これが厚過ぎるとこの層
による光ンドを連続して接続するように選定されること
は言うまでもない。In the present invention, the n-type layer may be a well-known semiconductor layer with as low resistance as possible, and its film thickness is 200 to 500 layers. The composition of the i-type layer has a band gap of 1.3 to 1.
．． 7 eV, and the film thickness is 3,000 to 7 eV.
,000λ. The composition of the p-type layer is selected such that its bandgap is between 1.8 and 2.5 eV. The sum of the film thicknesses of the buffer layer and p-type layer is 50 to 20
Selected to be 0 people. It goes without saying that if this is too thick, this layer should be chosen to connect the optical nodes in succession.
本発明によれば、Ｐ型層−８ｉＣとｉ型層−３ｉＧｅの
へテロ接合にバッファ層を設けることにより、ｐ／ｉ界
面特性の秀れた、したがって開放電圧が大きく、かつ光
電変換特性の秀れたアモルファス太陽電池を簡便に作製
できる効果がある。According to the present invention, by providing a buffer layer at the heterojunction between the P-type layer 8iC and the i-type layer 3iGe, excellent p/i interface characteristics, a large open circuit voltage, and excellent photoelectric conversion characteristics can be obtained. This has the effect of easily producing excellent amorphous solar cells.
第１図は、実施例１を説明するための断面図、第２図は
、実施例２を説明するための断面図、第３図は、実施例
３を説明するための断面図、第４図は、実施例４を説明
するための断面図である。
１１・・・ガラス基板、１２・・・透明導電膜。
１３ ・・ｐ型層−８ｉＣ膜、１４−バッファ層、ｉ型
層 −Ｓ ｉ膜、１５− ｉ型層−８ｉＧｅ膜、１６・
・・ｎ型微結晶Ｓｉ膜、１７・・・Ａｇ電極。
２４ ： ３４ ： ４４ ： ５４・・・バッファ層
ｉ型ａ−５ｉｃＧｅ膜。
第７目 第２図
第３０ ＄４図1 is a cross-sectional view for explaining Example 1, FIG. 2 is a cross-sectional view for explaining Example 2, FIG. 3 is a cross-sectional view for explaining Example 3, and FIG. The figure is a sectional view for explaining Example 4. 11...Glass substrate, 12...Transparent conductive film. 13... p-type layer - 8iC film, 14- buffer layer, i-type layer - Si film, 15- i-type layer - 8iGe film, 16.
...N-type microcrystalline Si film, 17...Ag electrode. 24: 34: 44: 54... Buffer layer i-type a-5icGe film. 7th Figure 2 Figure 30 $4 Figure
Claims (1)
−ＳｉＧｅ膜である少なくとも１つのｐｉｎ接合構造を
有するアモルファス太陽電池において、該ｐ型層と該ｉ
型層との間に該ｐ型層よりも光学的バンドギャップが小
さく、かつ該ｉ型層よりも光学的バンドギャップが大き
いバッファ層薄膜を設け、該バッファ層薄膜はｉ型ａ−
Ｓｉ膜およびｉ型Ａ−ＳｉＣＧｅ膜のいずれかまたは両
者からなることを特徴とするアモルファス太陽電池。1. The p-type layer is a p-type a-SiC film, and the i-type layer is an i-type a-SiC film.
- In an amorphous solar cell having at least one pin junction structure which is a SiGe film, the p-type layer and the i
A buffer layer thin film having an optical band gap smaller than the p-type layer and larger than the i-type layer is provided between the buffer layer thin film and the i-type a-type layer.
An amorphous solar cell comprising either or both of a Si film and an i-type A-SiCGe film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290416A JPH0620151B2 (en) | 1986-12-08 | 1986-12-08 | Amorphous solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290416A JPH0620151B2 (en) | 1986-12-08 | 1986-12-08 | Amorphous solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63143877A true JPS63143877A (en) | 1988-06-16 |
| JPH0620151B2 JPH0620151B2 (en) | 1994-03-16 |
Family
ID=17755742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61290416A Expired - Fee Related JPH0620151B2 (en) | 1986-12-08 | 1986-12-08 | Amorphous solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0620151B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0273673A (en) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | Film solar battery |
| EP0749162A2 (en) * | 1995-06-16 | 1996-12-18 | Interuniversitair Micro-Elektronica Centrum Vzw | Vertical MISFET devices, CMOS process integration, RAM applications |
| CN102136517A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Crystalline silicon heterojunction lamination solar cell and manufacture method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160175A (en) * | 1981-03-28 | 1982-10-02 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPS5810871A (en) * | 1981-07-13 | 1983-01-21 | Agency Of Ind Science & Technol | Amorphous solar battery |
| JPS5910880A (en) * | 1982-07-09 | 1984-01-20 | 株式会社日立製作所 | Fuel spacer |
| JPS59205770A (en) * | 1983-04-15 | 1984-11-21 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Photovoltaic device |
| JPS6030181A (en) * | 1983-07-28 | 1985-02-15 | Matsushita Electric Ind Co Ltd | Amorphous thin film photovoltaic element |
| JPS62165374A (en) * | 1986-01-16 | 1987-07-21 | Sumitomo Electric Ind Ltd | Amorphous photovoltaic element |
-
1986
- 1986-12-08 JP JP61290416A patent/JPH0620151B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160175A (en) * | 1981-03-28 | 1982-10-02 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPS5810871A (en) * | 1981-07-13 | 1983-01-21 | Agency Of Ind Science & Technol | Amorphous solar battery |
| JPS5910880A (en) * | 1982-07-09 | 1984-01-20 | 株式会社日立製作所 | Fuel spacer |
| JPS59205770A (en) * | 1983-04-15 | 1984-11-21 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Photovoltaic device |
| JPS6030181A (en) * | 1983-07-28 | 1985-02-15 | Matsushita Electric Ind Co Ltd | Amorphous thin film photovoltaic element |
| JPS62165374A (en) * | 1986-01-16 | 1987-07-21 | Sumitomo Electric Ind Ltd | Amorphous photovoltaic element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0273673A (en) * | 1988-09-08 | 1990-03-13 | Fuji Electric Corp Res & Dev Ltd | Film solar battery |
| EP0749162A2 (en) * | 1995-06-16 | 1996-12-18 | Interuniversitair Micro-Elektronica Centrum Vzw | Vertical MISFET devices, CMOS process integration, RAM applications |
| EP0749162A3 (en) * | 1995-06-16 | 1998-08-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Vertical MISFET devices, CMOS process integration, RAM applications |
| CN102136517A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Crystalline silicon heterojunction lamination solar cell and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0620151B2 (en) | 1994-03-16 |
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