JPS57152595A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS57152595A
JPS57152595A JP3856381A JP3856381A JPS57152595A JP S57152595 A JPS57152595 A JP S57152595A JP 3856381 A JP3856381 A JP 3856381A JP 3856381 A JP3856381 A JP 3856381A JP S57152595 A JPS57152595 A JP S57152595A
Authority
JP
Japan
Prior art keywords
electric potential
source side
mos type
memory cell
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3856381A
Other languages
Japanese (ja)
Other versions
JPS613033B2 (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3856381A priority Critical patent/JPS57152595A/en
Publication of JPS57152595A publication Critical patent/JPS57152595A/en
Publication of JPS613033B2 publication Critical patent/JPS613033B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To always maintain the source electric potential constantly regardless of the number of writing cells, and to perform stable writings, by installing a means which maintain the source side electric potential of the memory cell at a specific level at the time of data writing. CONSTITUTION:To a nonvolatile semiconductor memory device using MOS type FETs M11-Mmn having a floating structure as memory cells, for example, a source electric potential controlling circuit 40 as shown in the diagram is installed. Then, the source side electric potential VS* of the memory cell is maintained at a level which is close to the electric potential of the source side N2 of an MOS type FET 3 having a structure equal to the memory cell, by impressing a prescribed voltage upon the drain of th MOS type FET 3, by maintaining the gate at a constant electric potential, and by comparing the electric potential appearing at the source side N2 of the MOS type FET 3 with the source side electric potential VS* of the memory.
JP3856381A 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device Granted JPS57152595A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3856381A JPS57152595A (en) 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3856381A JPS57152595A (en) 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57152595A true JPS57152595A (en) 1982-09-20
JPS613033B2 JPS613033B2 (en) 1986-01-29

Family

ID=12528763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3856381A Granted JPS57152595A (en) 1981-03-17 1981-03-17 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57152595A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163999A (en) * 1984-02-21 1986-04-02 ガスト　パ−ルゴス Apparatus for programming eprom and eeprom
JPS637599A (en) * 1986-06-26 1988-01-13 Nec Corp Non-volatile semiconductor memory device
JPS6326898A (en) * 1986-06-03 1988-02-04 エスジーエス―トムソン　マイクロエレクトロニクス　エス．ピー．エイ． Source bias voltage generator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163999A (en) * 1984-02-21 1986-04-02 ガスト　パ−ルゴス Apparatus for programming eprom and eeprom
JPS6326898A (en) * 1986-06-03 1988-02-04 エスジーエス―トムソン　マイクロエレクトロニクス　エス．ピー．エイ． Source bias voltage generator
JPS637599A (en) * 1986-06-26 1988-01-13 Nec Corp Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
JPS613033B2 (en) 1986-01-29

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