JPS57145388A - Control method for laser light generation - Google Patents

Control method for laser light generation

Info

Publication number
JPS57145388A
JPS57145388A JP3038081A JP3038081A JPS57145388A JP S57145388 A JPS57145388 A JP S57145388A JP 3038081 A JP3038081 A JP 3038081A JP 3038081 A JP3038081 A JP 3038081A JP S57145388 A JPS57145388 A JP S57145388A
Authority
JP
Japan
Prior art keywords
regions
electrodes
type semiconductor
exciting
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3038081A
Other languages
Japanese (ja)
Inventor
Hitoshi Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3038081A priority Critical patent/JPS57145388A/en
Publication of JPS57145388A publication Critical patent/JPS57145388A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make it possible to control the laser light very simply, by using a semiconducotor laser wherein exciting regions and non-exciting regions are arranged and formed in the longitudinal direction of a resonator, and inputting the incident light from the outside under the state a specified bias current is supplied to the exciting regions. CONSTITUTION:On an N type semiconductor substrate 1, an N type semiconductor confining layer 2, N or P type semiconductor active layer 3, a P type semiconductor confining layer 4, and a P type electrode semiconductor layer 5 are laminated and grown. The opposing end surfaces of the obtained laminated body 6 are used as Fabry-P erot reflecting surfaces 7 and 8. An electrode 9 is deposited on the entire bottom surface of the substrate 1. A plurality of electrodes 10 are provided along the line connecting the reflecting surfaces 7 and 8 on the layer 5 with an interval being provided. The regions where the electrodes 10 are present are made to be the exciting regions M, and the regions where the electrodes 10 are not present are made to be non-exciting regions G. The bias current IB is flowed to all the electrodes 10 from a current source 11. Under this state, control light L is inputted to the reflecting surface, and the laser light B whose intensity corresponds to that of the light L is emitted from the reflecting surfaces 7 and 8.
JP3038081A 1981-03-03 1981-03-03 Control method for laser light generation Pending JPS57145388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3038081A JPS57145388A (en) 1981-03-03 1981-03-03 Control method for laser light generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3038081A JPS57145388A (en) 1981-03-03 1981-03-03 Control method for laser light generation

Publications (1)

Publication Number Publication Date
JPS57145388A true JPS57145388A (en) 1982-09-08

Family

ID=12302270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3038081A Pending JPS57145388A (en) 1981-03-03 1981-03-03 Control method for laser light generation

Country Status (1)

Country Link
JP (1) JPS57145388A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105391A (en) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> Method of light amplification by use of semiconductor laser
EP0194335A2 (en) * 1985-03-14 1986-09-17 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Improved semiconductor laser devices
JP2013191895A (en) * 2013-07-03 2013-09-26 Sony Corp Semiconductor laser element, method for driving the same, and semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868188A (en) * 1971-12-20 1973-09-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868188A (en) * 1971-12-20 1973-09-17

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105391A (en) * 1982-12-09 1984-06-18 Nippon Telegr & Teleph Corp <Ntt> Method of light amplification by use of semiconductor laser
JPH041513B2 (en) * 1982-12-09 1992-01-13 Nippon Telegraph & Telephone
EP0194335A2 (en) * 1985-03-14 1986-09-17 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Improved semiconductor laser devices
JP2013191895A (en) * 2013-07-03 2013-09-26 Sony Corp Semiconductor laser element, method for driving the same, and semiconductor laser device

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