JPS57211789A - Driving method for diode laser - Google Patents

Driving method for diode laser

Info

Publication number
JPS57211789A
JPS57211789A JP9774381A JP9774381A JPS57211789A JP S57211789 A JPS57211789 A JP S57211789A JP 9774381 A JP9774381 A JP 9774381A JP 9774381 A JP9774381 A JP 9774381A JP S57211789 A JPS57211789 A JP S57211789A
Authority
JP
Japan
Prior art keywords
diode
parallel
diode laser
polarity
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9774381A
Other languages
Japanese (ja)
Inventor
Hiroyuki Ishizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9774381A priority Critical patent/JPS57211789A/en
Publication of JPS57211789A publication Critical patent/JPS57211789A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To allow light having two kinds of wavelength to be selectively emitted for preventing destruction due to a backward electromotive force, by a method wherein diode lasers are connected in parallel so as to be opposite in polarity to each other, and the direction of the driving current is changed over. CONSTITUTION:A first diode laser D1 and a second diode laser D2 having an oscillation wavelength different from that of the first diode laser D1 are connected in parallel so as to be opposite in polarity to each other to constitute a parallel diode structure. A laser-driving power source that can be changed over to positive and negative is connected across the parallel diode structure. By changing over the polarity of the power source, the first and second diode lasers D1, D2 are made to selectively emit light having wavelengths different from each other.
JP9774381A 1981-06-23 1981-06-23 Driving method for diode laser Pending JPS57211789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9774381A JPS57211789A (en) 1981-06-23 1981-06-23 Driving method for diode laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9774381A JPS57211789A (en) 1981-06-23 1981-06-23 Driving method for diode laser

Publications (1)

Publication Number Publication Date
JPS57211789A true JPS57211789A (en) 1982-12-25

Family

ID=14200365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9774381A Pending JPS57211789A (en) 1981-06-23 1981-06-23 Driving method for diode laser

Country Status (1)

Country Link
JP (1) JPS57211789A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0808521A1 (en) * 1995-02-10 1997-11-26 Opto Power Corporation Laser package with reversed laser diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0808521A1 (en) * 1995-02-10 1997-11-26 Opto Power Corporation Laser package with reversed laser diode
EP0808521A4 (en) * 1995-02-10 1998-05-06 Opto Power Corp Laser package with reversed laser diode

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