JPS57162483A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS57162483A
JPS57162483A JP4798181A JP4798181A JPS57162483A JP S57162483 A JPS57162483 A JP S57162483A JP 4798181 A JP4798181 A JP 4798181A JP 4798181 A JP4798181 A JP 4798181A JP S57162483 A JPS57162483 A JP S57162483A
Authority
JP
Japan
Prior art keywords
layer
embedded
refractive index
striped part
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4798181A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4798181A priority Critical patent/JPS57162483A/en
Publication of JPS57162483A publication Critical patent/JPS57162483A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To deflect the luminous light by a method wherein the embedded layer with the different refractive index and the conductive form is embedded in the clad layer located on the active layer leaving the striped part in the luminous device of the duplex hetero structure holding the laser oscillating active layer by the clad layer with the forbidden band wider than that of the active layer. CONSTITUTION:The N type InP clad layer 2 and the InGaAsP active layer 3 for the epitaxial growth and the P type InP clad layer 4 including the N type InGaAsP layer 5 embedded in said layer 4 leaving the striped part is formed on the layer 3. Then the layer 4 is coated with the P side electrodes 61 and 63 corresponding to the layer 5 and coated with the P side electrode 62 corresponding to the striped part while the reverse side of the substrate 1 is provided with the N side electrode 7. Through these procedures, the traverse oscillating mode in the region outside the luminous light in the desired direction by means of changing the horizontal refractive index of the striped part in terms of the refractive index of the embedded layer 5.
JP4798181A 1981-03-31 1981-03-31 Semiconductor luminous device Pending JPS57162483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4798181A JPS57162483A (en) 1981-03-31 1981-03-31 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4798181A JPS57162483A (en) 1981-03-31 1981-03-31 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS57162483A true JPS57162483A (en) 1982-10-06

Family

ID=12790485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4798181A Pending JPS57162483A (en) 1981-03-31 1981-03-31 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS57162483A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236190A (en) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol Semiconductor laser
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
WO2006030746A1 (en) * 2004-09-13 2006-03-23 The University Of Tokyo Semiconductor light-emitting element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591892A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Semiconductor laser light emission device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591892A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Semiconductor laser light emission device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61236190A (en) * 1985-04-12 1986-10-21 Agency Of Ind Science & Technol Semiconductor laser
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5100833A (en) * 1987-08-05 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
WO2006030746A1 (en) * 2004-09-13 2006-03-23 The University Of Tokyo Semiconductor light-emitting element

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