JPS57141129A - Semiconductor circuit - Google Patents
Semiconductor circuitInfo
- Publication number
- JPS57141129A JPS57141129A JP56026150A JP2615081A JPS57141129A JP S57141129 A JPS57141129 A JP S57141129A JP 56026150 A JP56026150 A JP 56026150A JP 2615081 A JP2615081 A JP 2615081A JP S57141129 A JPS57141129 A JP S57141129A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric strength
- base
- circuit
- emitter
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/088—Transistor-transistor logic
Landscapes
- Engineering & Computer Science (AREA)
- Logic Circuits (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
Abstract
PURPOSE:To increase the dielectric strength of an output stage circuit by providing a switch circuit to the base of the output-stage transistor (TR) of a Darlington circuit. CONSTITUTION:A Darlington circuit consists of TRs 21 and 23. A TR26 interposed between the TR23 and the ground turns on and off according to the inverted signal of an enable signal. The dielectric strength viewed from an output terminal OUT to the ground potential is the sum of the base-emitter dielectric strength of the TR23 and the collector-base dielectric strength of the TR26 when the base and emitter are short-circuited, so the dielectric strength is increased.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56026150A JPS57141129A (en) | 1981-02-26 | 1981-02-26 | Semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56026150A JPS57141129A (en) | 1981-02-26 | 1981-02-26 | Semiconductor circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57141129A true JPS57141129A (en) | 1982-09-01 |
Family
ID=12185501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56026150A Pending JPS57141129A (en) | 1981-02-26 | 1981-02-26 | Semiconductor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57141129A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980022A (en) * | 1982-09-28 | 1984-05-09 | モノリシツク・メモリ−ズ・インコ−ポレイテツド | Active output disable circuit |
-
1981
- 1981-02-26 JP JP56026150A patent/JPS57141129A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980022A (en) * | 1982-09-28 | 1984-05-09 | モノリシツク・メモリ−ズ・インコ−ポレイテツド | Active output disable circuit |
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