JPS57134925A - Plasma cvd film producer - Google Patents

Plasma cvd film producer

Info

Publication number
JPS57134925A
JPS57134925A JP2012581A JP2012581A JPS57134925A JP S57134925 A JPS57134925 A JP S57134925A JP 2012581 A JP2012581 A JP 2012581A JP 2012581 A JP2012581 A JP 2012581A JP S57134925 A JPS57134925 A JP S57134925A
Authority
JP
Japan
Prior art keywords
bell jar
deposits
etching
upper electrode
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012581A
Other languages
Japanese (ja)
Other versions
JPS6243331B2 (en
Inventor
Junichi Suzuki
Harushige Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP2012581A priority Critical patent/JPS57134925A/en
Publication of JPS57134925A publication Critical patent/JPS57134925A/en
Publication of JPS6243331B2 publication Critical patent/JPS6243331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To make it possible to carry out plasma etching without dismantling a quarts component from a CVD apparatus by providing a change-over switch which serves to apply high-frequency voltage between a second upper electrode and a lower electrode inside a bell jar. CONSTITUTION:A film can be produced by plasma CVD on a substrate by the following process: A suscepter of carbon is heated with a heater 5 in a vacuum, and the switch SW which serves to feed reactor gas through gas inlets 1, 6 is switched to the a-side to apply high-frequency power from a high-frequency oscilllator 11 between an upper electrode plate 1a and the lower electrode plate 4. During this process, deposits are formed inside a quartz bell jar 2 so that, for the purpose of cleaning the deposits, a vacuum is created in the bell jar again and the change-over switch SW is switched to the b-side for the external electrode 8 with etching gas introduced from the upper gas inlet and an upper electrode terminal 1 to produce plasma, whereby the bell jar can restore its transparency by the deposits formed on it being removed by etching.
JP2012581A 1981-02-16 1981-02-16 Plasma cvd film producer Granted JPS57134925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012581A JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012581A JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Publications (2)

Publication Number Publication Date
JPS57134925A true JPS57134925A (en) 1982-08-20
JPS6243331B2 JPS6243331B2 (en) 1987-09-12

Family

ID=12018394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012581A Granted JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Country Status (1)

Country Link
JP (1) JPS57134925A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (en) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Cleaning for chamber
JPS63129630A (en) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd Thin-film formation using plasma cvd
JPH01102921A (en) * 1987-10-16 1989-04-20 Semiconductor Energy Lab Co Ltd Manufacture of film
JPH01115235U (en) * 1988-01-29 1989-08-03

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (en) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Cleaning for chamber
JPH0588539B2 (en) * 1986-08-19 1993-12-22 Tokyo Electron Ltd
JPS63129630A (en) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd Thin-film formation using plasma cvd
JPH01102921A (en) * 1987-10-16 1989-04-20 Semiconductor Energy Lab Co Ltd Manufacture of film
JPH01115235U (en) * 1988-01-29 1989-08-03

Also Published As

Publication number Publication date
JPS6243331B2 (en) 1987-09-12

Similar Documents

Publication Publication Date Title
TW347416B (en) Post treatment method for in-situ cleaning
US4452828A (en) Production of amorphous silicon film
DE69740178D1 (en) PLASMA RATE REACTOR AND METHOD FOR ITS OPERATION
TW328138B (en) Chamber etching method of plasma processing apparatus and plasma apparatus using such method
JPS6056431B2 (en) plasma etching equipment
KR890013966A (en) Plasma processing method and apparatus
DE69523488D1 (en) Method and device for igniting plasmas in a process module
KR900013595A (en) Plasma Etching Method and Apparatus
JPS5531154A (en) Plasma etching apparatus
JPS57134925A (en) Plasma cvd film producer
DE69205647D1 (en) Process for the production of diamond layers using CVD supported by microwave plasma.
JPS5778546A (en) Production of photoconductive silicon layer
JPS556410A (en) Plasma gas phase reactor
JPS57113214A (en) Manufacture of amorphous semiconductor film
JPH03228321A (en) Plasma cvd device
JPS5719034A (en) Vapor growth apparatus
JPH02119124A (en) Plasma processing equipment
JPS57202726A (en) Manufacture of semiconductor device
JPS6428925A (en) Formation of insulating film
JPS5559727A (en) Plasma deposition device
JP2561129B2 (en) Thin film forming equipment
JPS56158143A (en) Reduced pressure type vapor phase growing device
JPS60254730A (en) Resist exfoliation apparatus
JPH0418456B2 (en)
JPH05243163A (en) Method of removing residual halogen inside reaction oven