JPS57134925A - Plasma cvd film producer - Google Patents
Plasma cvd film producerInfo
- Publication number
- JPS57134925A JPS57134925A JP2012581A JP2012581A JPS57134925A JP S57134925 A JPS57134925 A JP S57134925A JP 2012581 A JP2012581 A JP 2012581A JP 2012581 A JP2012581 A JP 2012581A JP S57134925 A JPS57134925 A JP S57134925A
- Authority
- JP
- Japan
- Prior art keywords
- bell jar
- deposits
- etching
- upper electrode
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To make it possible to carry out plasma etching without dismantling a quarts component from a CVD apparatus by providing a change-over switch which serves to apply high-frequency voltage between a second upper electrode and a lower electrode inside a bell jar. CONSTITUTION:A film can be produced by plasma CVD on a substrate by the following process: A suscepter of carbon is heated with a heater 5 in a vacuum, and the switch SW which serves to feed reactor gas through gas inlets 1, 6 is switched to the a-side to apply high-frequency power from a high-frequency oscilllator 11 between an upper electrode plate 1a and the lower electrode plate 4. During this process, deposits are formed inside a quartz bell jar 2 so that, for the purpose of cleaning the deposits, a vacuum is created in the bell jar again and the change-over switch SW is switched to the b-side for the external electrode 8 with etching gas introduced from the upper gas inlet and an upper electrode terminal 1 to produce plasma, whereby the bell jar can restore its transparency by the deposits formed on it being removed by etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012581A JPS57134925A (en) | 1981-02-16 | 1981-02-16 | Plasma cvd film producer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012581A JPS57134925A (en) | 1981-02-16 | 1981-02-16 | Plasma cvd film producer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57134925A true JPS57134925A (en) | 1982-08-20 |
JPS6243331B2 JPS6243331B2 (en) | 1987-09-12 |
Family
ID=12018394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012581A Granted JPS57134925A (en) | 1981-02-16 | 1981-02-16 | Plasma cvd film producer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57134925A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348832A (en) * | 1986-08-19 | 1988-03-01 | Tokyo Electron Ltd | Cleaning for chamber |
JPS63129630A (en) * | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | Thin-film formation using plasma cvd |
JPH01102921A (en) * | 1987-10-16 | 1989-04-20 | Semiconductor Energy Lab Co Ltd | Manufacture of film |
JPH01115235U (en) * | 1988-01-29 | 1989-08-03 |
-
1981
- 1981-02-16 JP JP2012581A patent/JPS57134925A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6348832A (en) * | 1986-08-19 | 1988-03-01 | Tokyo Electron Ltd | Cleaning for chamber |
JPH0588539B2 (en) * | 1986-08-19 | 1993-12-22 | Tokyo Electron Ltd | |
JPS63129630A (en) * | 1986-11-20 | 1988-06-02 | Fuji Electric Co Ltd | Thin-film formation using plasma cvd |
JPH01102921A (en) * | 1987-10-16 | 1989-04-20 | Semiconductor Energy Lab Co Ltd | Manufacture of film |
JPH01115235U (en) * | 1988-01-29 | 1989-08-03 |
Also Published As
Publication number | Publication date |
---|---|
JPS6243331B2 (en) | 1987-09-12 |
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