JPS57132373A - Manufacture of solar battery - Google Patents

Manufacture of solar battery

Info

Publication number
JPS57132373A
JPS57132373A JP56017419A JP1741981A JPS57132373A JP S57132373 A JPS57132373 A JP S57132373A JP 56017419 A JP56017419 A JP 56017419A JP 1741981 A JP1741981 A JP 1741981A JP S57132373 A JPS57132373 A JP S57132373A
Authority
JP
Japan
Prior art keywords
magnetic field
ion
scanning
current magnetic
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56017419A
Other languages
Japanese (ja)
Other versions
JPS6155267B2 (en
Inventor
Haruo Ito
Mitsunori Ketsusako
Tadashi Saito
Katsumi Tokikuchi
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56017419A priority Critical patent/JPS57132373A/en
Publication of JPS57132373A publication Critical patent/JPS57132373A/en
Publication of JPS6155267B2 publication Critical patent/JPS6155267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

PURPOSE:To enable to efficiently manufacture the solar battery using a device of simple structure by a method wherein an alternate current magnetic field is superposed on a separator direct current magnetic field, and an ion beam is scanned using magnetic field scanning method. CONSTITUTION:The alternate current magnetic field is superposed on the separator direct current magnetic field having a microwave ion source 1 with which a large current ion beam will be led out easily and a simple deflector magnet 2, and an ion beam is scanned using the magnetic field scanning method. This device has a large beam diameter of several centimeters, and besides, as the beam scanning is performed, the separation of an ion seed is unsatisfactory, but the characteristics which are equal to the conventional device can be obtained by implanting P<+> ion group alone on an Si face. Also, by performing a uniaxial scanning in a right-angled direction for the scanning direction of an ion beam 3, a laser annealing method and the like can be used as an annealing method to be performed after ion implantation, thereby enabling to perform a continous high-speed operation automatically.
JP56017419A 1981-02-10 1981-02-10 Manufacture of solar battery Granted JPS57132373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56017419A JPS57132373A (en) 1981-02-10 1981-02-10 Manufacture of solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56017419A JPS57132373A (en) 1981-02-10 1981-02-10 Manufacture of solar battery

Publications (2)

Publication Number Publication Date
JPS57132373A true JPS57132373A (en) 1982-08-16
JPS6155267B2 JPS6155267B2 (en) 1986-11-27

Family

ID=11943483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56017419A Granted JPS57132373A (en) 1981-02-10 1981-02-10 Manufacture of solar battery

Country Status (1)

Country Link
JP (1) JPS57132373A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525301A (en) * 2008-06-11 2011-09-15 インテバック・インコーポレイテッド Ion implantation apparatus and semiconductor element manufacturing method
US8997688B2 (en) 2009-06-23 2015-04-07 Intevac, Inc. Ion implant system having grid assembly
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
FR3067168A1 (en) * 2017-06-01 2018-12-07 Segton Advanced Technology METHOD FOR MANUFACTURING AN ALL-SILICON LIGHT-ELECTRICITY CONVERTER FOR A GIANT PHOTOCONVERSION
FR3067169A1 (en) * 2017-06-01 2018-12-07 Segton Advanced Technology IMPROVED METHOD FOR MANUFACTURING A METAMATERIAL WITHIN A SILICON LIGHT-ELECTRICITY CONVERTER
WO2018220447A3 (en) * 2017-06-01 2019-02-14 Segton Advanced Technologie Sas Improved process for manufacturing a crystalline metamaterial within a silicon light-to-electricity converter
FR3081081A1 (en) * 2018-05-14 2019-11-15 Segton Advanced Technology AMORPHISING PROCESS FOR INDUSTRIALLY CREATING A GIANT PHOTOCONVERSION METAMATERIAL IN A SILICON LIGHT-ELECTRICITY CONVERTER

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525301A (en) * 2008-06-11 2011-09-15 インテバック・インコーポレイテッド Ion implantation apparatus and semiconductor element manufacturing method
US9741894B2 (en) 2009-06-23 2017-08-22 Intevac, Inc. Ion implant system having grid assembly
US8997688B2 (en) 2009-06-23 2015-04-07 Intevac, Inc. Ion implant system having grid assembly
US9303314B2 (en) 2009-06-23 2016-04-05 Intevac, Inc. Ion implant system having grid assembly
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US9875922B2 (en) 2011-11-08 2018-01-23 Intevac, Inc. Substrate processing system and method
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9583661B2 (en) 2012-12-19 2017-02-28 Intevac, Inc. Grid for plasma ion implant
FR3067168A1 (en) * 2017-06-01 2018-12-07 Segton Advanced Technology METHOD FOR MANUFACTURING AN ALL-SILICON LIGHT-ELECTRICITY CONVERTER FOR A GIANT PHOTOCONVERSION
FR3067169A1 (en) * 2017-06-01 2018-12-07 Segton Advanced Technology IMPROVED METHOD FOR MANUFACTURING A METAMATERIAL WITHIN A SILICON LIGHT-ELECTRICITY CONVERTER
WO2018220447A3 (en) * 2017-06-01 2019-02-14 Segton Advanced Technologie Sas Improved process for manufacturing a crystalline metamaterial within a silicon light-to-electricity converter
WO2018220299A3 (en) * 2017-06-01 2019-03-28 Segton Advanced Technologie Sas Method for the production of a light-to-electricity converter made entirely from silicon for a giant photoconversion
US11437532B2 (en) 2017-06-01 2022-09-06 Segton Advanced Technology Method for the production of a light-to-electricity converter made entirely from silicon for a giant photoconversion
FR3081081A1 (en) * 2018-05-14 2019-11-15 Segton Advanced Technology AMORPHISING PROCESS FOR INDUSTRIALLY CREATING A GIANT PHOTOCONVERSION METAMATERIAL IN A SILICON LIGHT-ELECTRICITY CONVERTER

Also Published As

Publication number Publication date
JPS6155267B2 (en) 1986-11-27

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