JPS5712536A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5712536A JPS5712536A JP8703180A JP8703180A JPS5712536A JP S5712536 A JPS5712536 A JP S5712536A JP 8703180 A JP8703180 A JP 8703180A JP 8703180 A JP8703180 A JP 8703180A JP S5712536 A JPS5712536 A JP S5712536A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- eliminating
- alloyed
- joint
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve reliability of a device, by eliminating a semiconductor layer and a metallic layer on an element-formed substrate and heat-treating thus laminated product to turn it into an alloy, and then, by eliminating the alloyed layer and the metallic layer selectively. CONSTITUTION:A window is selectively provided on an SiO25 for protection of a P-N joint and surface, and an Si layer 6 with a thickness of approximately 300- 500Angstrom and Al7 of approximately 2mu are laminated. Impurity-containing Si, poly Si or any other semiconductor may well be used for the layer 6. Further, Mo, Ti and W, etc. may be used instead of Al. And then, thus prepared product is heat-treated at a temperature ranging from 350-500 deg.C to be alloyed, and the layers 7 and 9 are etched out with a resist mask 8 to complete wiring layers 9-11. It is possible, by using this mechanism, to prevent occurrence of P-N joint shortcircuit as Al does not contact an element section directily and improve reliability of the device, and besides, it also possible to shorten manufacturing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8703180A JPS5712536A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8703180A JPS5712536A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5712536A true JPS5712536A (en) | 1982-01-22 |
Family
ID=13903578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8703180A Pending JPS5712536A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5712536A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5452182A (en) * | 1990-04-05 | 1995-09-19 | Martin Marietta Corporation | Flexible high density interconnect structure and flexibly interconnected system |
-
1980
- 1980-06-26 JP JP8703180A patent/JPS5712536A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5452182A (en) * | 1990-04-05 | 1995-09-19 | Martin Marietta Corporation | Flexible high density interconnect structure and flexibly interconnected system |
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