JPS6453433A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6453433A
JPS6453433A JP63069426A JP6942688A JPS6453433A JP S6453433 A JPS6453433 A JP S6453433A JP 63069426 A JP63069426 A JP 63069426A JP 6942688 A JP6942688 A JP 6942688A JP S6453433 A JPS6453433 A JP S6453433A
Authority
JP
Japan
Prior art keywords
adhered
film
superconductive material
isolation film
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63069426A
Other languages
Japanese (ja)
Other versions
JP3009146B2 (en
Inventor
Hideo Sunami
Juichi Nishino
Yutaka Misawa
Takahiko Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of JPS6453433A publication Critical patent/JPS6453433A/en
Application granted granted Critical
Publication of JP3009146B2 publication Critical patent/JP3009146B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a harmful metal, which is part of the composition of a superconductive material, from intruding into Si and SiO2, by a method wherein the superconductive material is covered with an isolation film. CONSTITUTION:An Si substrate 1 is oxidized to adhere a field, oxide 2. After that, an isolation film 3 is adhered and an oxide superconductive material having a perovskite crystal structure is adhered in the form of a thin film and is heat- treated at a temperature), to which an Si integrated circuit can withstand. After that, a resist is left at a desired part using a photolithograph and a wiring consisting of a superconductive material film 4 is formed using a sputter etching or ion milling method. After that, an isolation film 3 is again adhered, these are processed by a photo etching method and are formed in such a way as to cover the periphery of the film 4, a contact hole 5 is formed on this isolation film and a connecting electrode 6 is adhered. Thereby, a superconducting wiring can be constituted.
JP63069426A 1987-03-27 1988-03-25 Semiconductor integrated circuit Expired - Lifetime JP3009146B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7146287 1987-03-27
JP62-71462 1987-05-13
JP11467487 1987-05-13
JP62-114674 1987-05-13

Publications (2)

Publication Number Publication Date
JPS6453433A true JPS6453433A (en) 1989-03-01
JP3009146B2 JP3009146B2 (en) 2000-02-14

Family

ID=26412553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63069426A Expired - Lifetime JP3009146B2 (en) 1987-03-27 1988-03-25 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP3009146B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6464339A (en) * 1987-09-04 1989-03-10 Toshiba Corp Semiconductor device
JPH01218045A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
JP2001217470A (en) * 1999-12-02 2001-08-10 Abb Res Ltd High-temperature superconductive element and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154613A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Semiconductor device for ultra-low temperature
JPS63224274A (en) * 1987-03-12 1988-09-19 Agency Of Ind Science & Technol Superconductive device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154613A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Semiconductor device for ultra-low temperature
JPS63224274A (en) * 1987-03-12 1988-09-19 Agency Of Ind Science & Technol Superconductive device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6464339A (en) * 1987-09-04 1989-03-10 Toshiba Corp Semiconductor device
JPH01218045A (en) * 1988-02-26 1989-08-31 Nec Corp Semiconductor device
JP2001217470A (en) * 1999-12-02 2001-08-10 Abb Res Ltd High-temperature superconductive element and its manufacturing method

Also Published As

Publication number Publication date
JP3009146B2 (en) 2000-02-14

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