JPS5710985A - Solid image pickup element - Google Patents
Solid image pickup elementInfo
- Publication number
- JPS5710985A JPS5710985A JP8508280A JP8508280A JPS5710985A JP S5710985 A JPS5710985 A JP S5710985A JP 8508280 A JP8508280 A JP 8508280A JP 8508280 A JP8508280 A JP 8508280A JP S5710985 A JPS5710985 A JP S5710985A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- films
- gate
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To contrive the high quality of a picture by deepening the depth of an insulating film under a gate from the upper surface of a substrate than the depth of source and drain impurity layers wherein the occurrence of blooming is controlled. CONSTITUTION:Thick silicon oxide films 17, 17' are selectively formed on the main surface of a P type silicon substrate 10 and a source diffusion layer 11, a drain diffusion layer 12 are formed shallower than the thickness of the films 17, 17' at the part existing no films 17, 17'. Next, the film 17' used as a gate controlling the threshold voltage of an active MOS at a low value is etched and a gate electrode 16 is formed at the etched section. The charges flowed out of the layer 11 are hard to reach the layer 12 by the presence of the film 17'. Blooming control effect will further be improved by providing a high-impurity density layer 18 right below the film 17'.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8508280A JPS5710985A (en) | 1980-06-25 | 1980-06-25 | Solid image pickup element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8508280A JPS5710985A (en) | 1980-06-25 | 1980-06-25 | Solid image pickup element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5710985A true JPS5710985A (en) | 1982-01-20 |
JPS6229913B2 JPS6229913B2 (en) | 1987-06-29 |
Family
ID=13848680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8508280A Granted JPS5710985A (en) | 1980-06-25 | 1980-06-25 | Solid image pickup element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710985A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6179380A (en) * | 1984-09-27 | 1986-04-22 | Matsushita Electronics Corp | Solid-state image pickup element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665577A (en) * | 1979-11-01 | 1981-06-03 | Nec Corp | Solidstate image sensor |
-
1980
- 1980-06-25 JP JP8508280A patent/JPS5710985A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5665577A (en) * | 1979-11-01 | 1981-06-03 | Nec Corp | Solidstate image sensor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6179380A (en) * | 1984-09-27 | 1986-04-22 | Matsushita Electronics Corp | Solid-state image pickup element |
Also Published As
Publication number | Publication date |
---|---|
JPS6229913B2 (en) | 1987-06-29 |
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