JPS5665577A - Solidstate image sensor - Google Patents
Solidstate image sensorInfo
- Publication number
- JPS5665577A JPS5665577A JP14152479A JP14152479A JPS5665577A JP S5665577 A JPS5665577 A JP S5665577A JP 14152479 A JP14152479 A JP 14152479A JP 14152479 A JP14152479 A JP 14152479A JP S5665577 A JPS5665577 A JP S5665577A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- concentration
- region
- depletion layer
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001423 beryllium ion Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To reduce the balck level signal at photo emission, by making the impurity concentration for the substrate thinner at the surface and dense at the inside, and reducing the component, among the carrier produced, going to the charge transfer section by light. CONSTITUTION:A high concentration impurity region 13 is located beneath a depletion layer 10. Thus, the trapping center increases much and the diffusion length of carrier is shorter inversely proportional to the concentration of impurity, allowing to avoid the light production carrier from being reached to the depletion layer of the charge transfer section. Accordingly, even if a substrate less in the crystal failure is used, the black level signal the same as at dark can be output. As a method to provide the region 13, a 5 volt of voltage is fed to the gate electrode 9 at the substrate concentration, and the spread of a depletion layer 10 is about 0.1mum from the surface of the substrate, then boron can be ion-injected with 400KeV and about 1X10<12>/cm<2> in dose. This high concentration region need to be provided at a region deeper than 17mum from the surface of the substrate 5 at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14152479A JPS5665577A (en) | 1979-11-01 | 1979-11-01 | Solidstate image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14152479A JPS5665577A (en) | 1979-11-01 | 1979-11-01 | Solidstate image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5665577A true JPS5665577A (en) | 1981-06-03 |
Family
ID=15293964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14152479A Pending JPS5665577A (en) | 1979-11-01 | 1979-11-01 | Solidstate image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5665577A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710985A (en) * | 1980-06-25 | 1982-01-20 | Hitachi Ltd | Solid image pickup element |
| JPS5870685A (en) * | 1981-10-22 | 1983-04-27 | Nec Corp | Solid-state image pickup device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933582A (en) * | 1972-07-26 | 1974-03-28 | ||
| JPS5481094A (en) * | 1977-11-25 | 1979-06-28 | Hewlett Packard Yokogawa | Semiconductor photodetector |
| JPS5538023A (en) * | 1978-09-11 | 1980-03-17 | Toshiba Corp | Semiconductor device |
| JPS55128972A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Solid state pickup device |
| JPS5618475A (en) * | 1979-07-23 | 1981-02-21 | Toshiba Corp | Charge storage type semiconductor device and manufacture thereof |
-
1979
- 1979-11-01 JP JP14152479A patent/JPS5665577A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933582A (en) * | 1972-07-26 | 1974-03-28 | ||
| JPS5481094A (en) * | 1977-11-25 | 1979-06-28 | Hewlett Packard Yokogawa | Semiconductor photodetector |
| JPS5538023A (en) * | 1978-09-11 | 1980-03-17 | Toshiba Corp | Semiconductor device |
| JPS55128972A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Solid state pickup device |
| JPS5618475A (en) * | 1979-07-23 | 1981-02-21 | Toshiba Corp | Charge storage type semiconductor device and manufacture thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710985A (en) * | 1980-06-25 | 1982-01-20 | Hitachi Ltd | Solid image pickup element |
| JPS6229913B2 (en) * | 1980-06-25 | 1987-06-29 | Hitachi Ltd | |
| JPS5870685A (en) * | 1981-10-22 | 1983-04-27 | Nec Corp | Solid-state image pickup device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5495116A (en) | Solid image pickup unit | |
| JPS57162364A (en) | Solid state image pickup device | |
| JPS55110476A (en) | Solidstate image sensor | |
| EP0365294A3 (en) | Photometric apparatus employing solid-state imaging device | |
| JPS57173966A (en) | Solid state image pickup device | |
| JPS5665577A (en) | Solidstate image sensor | |
| JPS5739588A (en) | Solid state image pickup device | |
| GB1385282A (en) | Iamge pick up devices | |
| JPS57155784A (en) | Photodiode | |
| JPS56153782A (en) | Photoconductive thin-film for television camera tube using photosensitizer layer containing amorphous silicon | |
| JPS5739569A (en) | Solid state image pickup device | |
| ES8504407A1 (en) | Photoelectric cell and method of producing it. | |
| JPS5477088A (en) | Semiconductor photo detector | |
| JPS6415969A (en) | Solid-state image sensing device and manufacture thereof | |
| JPS5774945A (en) | Photoconductive film for image pick-up tube | |
| JPS5721876A (en) | Photosensor | |
| JPS56102170A (en) | Solid image pickup device | |
| JPS5717180A (en) | Semiconductor element | |
| JPS5474624A (en) | Solidstate pick up unit | |
| JPS6420654A (en) | Solid-state image sensing device and manufacture thereof | |
| JPS57134960A (en) | Semiconductor device | |
| JPS57109475A (en) | Solid image pickup element | |
| JPS57129582A (en) | Solid state image pickup device and its driving method | |
| JPS60247965A (en) | Solid-state image pickup element | |
| JPS561943A (en) | Electrophotographic image forming material |