JPS5710959A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710959A
JPS5710959A JP8700380A JP8700380A JPS5710959A JP S5710959 A JPS5710959 A JP S5710959A JP 8700380 A JP8700380 A JP 8700380A JP 8700380 A JP8700380 A JP 8700380A JP S5710959 A JPS5710959 A JP S5710959A
Authority
JP
Japan
Prior art keywords
bonded
electrode plate
semiconductor chip
bonded onto
common electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8700380A
Other languages
Japanese (ja)
Inventor
Masahiro Yamane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8700380A priority Critical patent/JPS5710959A/en
Publication of JPS5710959A publication Critical patent/JPS5710959A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To decrease the gap between semiconductor chips, by a method wherein at the position opposite to the common electrode plate connected between a first semiconductor chip and a second semiconductor chip, a lead part is led out from the second semiconductor chip. CONSTITUTION:Insulating plates 8 and 9 are bonded onto a metal substrate 20, a common electrode plate 21 is bonded onto the insulating plate 8, and a first diode chip 1 is bonded thereonto. An anode electrode plate 22 is bonded onto the insulating plate 9, and a second diode chip 2 is bonded onto said anode electrode plate 22. Cathode terminals 13 and 14 are bonded to the cathodes of the respective diode chips 1 and 2, a cathode electrode plate 12 is bonded to the cathode terminal 13, and a lead part 12a is led out upwardly. To the cathode terminal 13, one end 21b of the common electrode plate 21 is bonded. A synthetic resin container 23 is put thereon from above and bonded to the metal substrate 20, and the end parts of the lead parts 21a, 12a and 22a of the respective electrode plates are horizontally bent.
JP8700380A 1980-06-23 1980-06-23 Semiconductor device Pending JPS5710959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8700380A JPS5710959A (en) 1980-06-23 1980-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8700380A JPS5710959A (en) 1980-06-23 1980-06-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710959A true JPS5710959A (en) 1982-01-20

Family

ID=13902711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8700380A Pending JPS5710959A (en) 1980-06-23 1980-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710959A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4694322A (en) * 1983-09-29 1987-09-15 Kabushiki Kaisha Toshiba Press-packed semiconductor device
EP0297802A2 (en) * 1987-06-29 1989-01-04 Powerex, Inc. Isolated light-triggered thyristor module
US5159586A (en) * 1985-05-24 1992-10-27 Omron Tateisi Electronics Co. Device for processing optical data

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332673A (en) * 1976-09-04 1978-03-28 Semikron Gleichrichterbau Semiconductor constituting units

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5332673A (en) * 1976-09-04 1978-03-28 Semikron Gleichrichterbau Semiconductor constituting units

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4694322A (en) * 1983-09-29 1987-09-15 Kabushiki Kaisha Toshiba Press-packed semiconductor device
US5159586A (en) * 1985-05-24 1992-10-27 Omron Tateisi Electronics Co. Device for processing optical data
EP0297802A2 (en) * 1987-06-29 1989-01-04 Powerex, Inc. Isolated light-triggered thyristor module
EP0297802A3 (en) * 1987-06-29 1990-05-23 Powerex, Inc. Isolated light-triggered thyristor module

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