JPS57106507A - Manufacture of polycrystalline zinc selenide body - Google Patents

Manufacture of polycrystalline zinc selenide body

Info

Publication number
JPS57106507A
JPS57106507A JP55180371A JP18037180A JPS57106507A JP S57106507 A JPS57106507 A JP S57106507A JP 55180371 A JP55180371 A JP 55180371A JP 18037180 A JP18037180 A JP 18037180A JP S57106507 A JPS57106507 A JP S57106507A
Authority
JP
Japan
Prior art keywords
capsule
temp
znse
glass
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55180371A
Other languages
Japanese (ja)
Other versions
JPS606307B2 (en
Inventor
Hajime Ichiyanagi
Kenichiro Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP55180371A priority Critical patent/JPS606307B2/en
Publication of JPS57106507A publication Critical patent/JPS57106507A/en
Publication of JPS606307B2 publication Critical patent/JPS606307B2/en
Expired legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Lasers (AREA)

Abstract

PURPOSE:To manufacture a polycrystalline ZnSe body with high density, high purity and superior light transmission by a hot hydrostatic pressing method by pressing starting material at a lower temp. with a glass capsule, removing the capsule, and carrying out pressing at a higher temp. CONSTITUTION:A molding 2 of ZnSe powder is put in a glass capsule 1, and the capsule 1 is evacuated to a vacuum and sealed at a sealing part 3. The molding 2 is then compressed by hot hydrostatic pressing (HIP) at a relatively low temp. such as 900-1,200 deg.C at which the glass of the capsule is softened. At this time, the temp. is relatively low, so the ZnSe is not polluted by the glass components as impurities. The pressed ZnSe is taken out of the capsule 1 and subjected to HIP at a relatively high temp. of 1,300 deg.C to enhance the light transmission as well as to increase the density. Thus, a dense, high purity and transparent polycrystalline body almost free from voids and impurities is obtd.
JP55180371A 1980-12-22 1980-12-22 Method for producing polycrystalline zinc selenide Expired JPS606307B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55180371A JPS606307B2 (en) 1980-12-22 1980-12-22 Method for producing polycrystalline zinc selenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180371A JPS606307B2 (en) 1980-12-22 1980-12-22 Method for producing polycrystalline zinc selenide

Publications (2)

Publication Number Publication Date
JPS57106507A true JPS57106507A (en) 1982-07-02
JPS606307B2 JPS606307B2 (en) 1985-02-16

Family

ID=16082066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180371A Expired JPS606307B2 (en) 1980-12-22 1980-12-22 Method for producing polycrystalline zinc selenide

Country Status (1)

Country Link
JP (1) JPS606307B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584053A (en) * 1983-06-29 1986-04-22 Sumitomo Electric Industries, Ltd. Process for preparing ZnSe single crystal
JPH01218081A (en) * 1988-02-26 1989-08-31 Fanuc Ltd Laser oscillator
JPH01226747A (en) * 1988-03-08 1989-09-11 Tosoh Corp Production of high-purity translucent quartz glass
JPH03271107A (en) * 1980-12-29 1991-12-03 Raytheon Co Article of zinc selenide having improved optical characteristics
JPH03290350A (en) * 1990-04-09 1991-12-20 Natl Inst For Res In Inorg Mater Production of sintered material of zinc oxide having light transmission property
WO2002046120A1 (en) * 2000-12-04 2002-06-13 Sumitomo Electric Industries, Ltd. Ceramic optical components and production method therefor
US8911702B2 (en) * 2012-03-09 2014-12-16 Sumitomo Electric Industries, Ltd. Optical component and method for manufacturing same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03271107A (en) * 1980-12-29 1991-12-03 Raytheon Co Article of zinc selenide having improved optical characteristics
US4584053A (en) * 1983-06-29 1986-04-22 Sumitomo Electric Industries, Ltd. Process for preparing ZnSe single crystal
JPH01218081A (en) * 1988-02-26 1989-08-31 Fanuc Ltd Laser oscillator
JPH01226747A (en) * 1988-03-08 1989-09-11 Tosoh Corp Production of high-purity translucent quartz glass
JPH03290350A (en) * 1990-04-09 1991-12-20 Natl Inst For Res In Inorg Mater Production of sintered material of zinc oxide having light transmission property
WO2002046120A1 (en) * 2000-12-04 2002-06-13 Sumitomo Electric Industries, Ltd. Ceramic optical components and production method therefor
US6863842B2 (en) 2000-12-04 2005-03-08 Sumitomo Electric Industries, Ltd. Ceramic optical components and production method therefor
US8911702B2 (en) * 2012-03-09 2014-12-16 Sumitomo Electric Industries, Ltd. Optical component and method for manufacturing same

Also Published As

Publication number Publication date
JPS606307B2 (en) 1985-02-16

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