JPS5694750A - Heating treatment device - Google Patents

Heating treatment device

Info

Publication number
JPS5694750A
JPS5694750A JP17279579A JP17279579A JPS5694750A JP S5694750 A JPS5694750 A JP S5694750A JP 17279579 A JP17279579 A JP 17279579A JP 17279579 A JP17279579 A JP 17279579A JP S5694750 A JPS5694750 A JP S5694750A
Authority
JP
Japan
Prior art keywords
infrared ray
treatment device
thermoelectric couple
heating treatment
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17279579A
Other languages
English (en)
Other versions
JPS5745054B2 (ja
Inventor
Ryoichi Sakai
Yoshiki Tanigawa
Nobuyuki Kataigi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON INSTR KK
NIPPON INSUTSURUMENTSU KK
Pioneer Corp
Original Assignee
NIPPON INSTR KK
NIPPON INSUTSURUMENTSU KK
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON INSTR KK, NIPPON INSUTSURUMENTSU KK, Pioneer Electronic Corp filed Critical NIPPON INSTR KK
Priority to JP17279579A priority Critical patent/JPS5694750A/ja
Publication of JPS5694750A publication Critical patent/JPS5694750A/ja
Publication of JPS5745054B2 publication Critical patent/JPS5745054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP17279579A 1979-12-28 1979-12-28 Heating treatment device Granted JPS5694750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17279579A JPS5694750A (en) 1979-12-28 1979-12-28 Heating treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17279579A JPS5694750A (en) 1979-12-28 1979-12-28 Heating treatment device

Publications (2)

Publication Number Publication Date
JPS5694750A true JPS5694750A (en) 1981-07-31
JPS5745054B2 JPS5745054B2 (ja) 1982-09-25

Family

ID=15948494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17279579A Granted JPS5694750A (en) 1979-12-28 1979-12-28 Heating treatment device

Country Status (1)

Country Link
JP (1) JPS5694750A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146227A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Heat treatment furnace
JPS60228932A (ja) * 1984-04-27 1985-11-14 Komatsu Denshi Kinzoku Kk 光加熱炉用温度測定装置
JPS62203424U (ja) * 1986-06-13 1987-12-25
JPH0458527A (ja) * 1990-06-28 1992-02-25 Ebara Res Co Ltd 洗浄方法
JPH05259146A (ja) * 1992-03-09 1993-10-08 Hitachi Ltd 半導体製造装置
JPWO2019131791A1 (ja) * 2017-12-27 2020-04-09 株式会社米倉製作所 赤外線焼成装置及びこれを用いた電子部品の焼成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
JPS4842819U (ja) * 1971-09-22 1973-06-01
JPS50147558U (ja) * 1974-05-22 1975-12-08

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
JPS4842819U (ja) * 1971-09-22 1973-06-01
JPS50147558U (ja) * 1974-05-22 1975-12-08

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56146227A (en) * 1980-04-16 1981-11-13 Hitachi Ltd Heat treatment furnace
JPS6337494B2 (ja) * 1980-04-16 1988-07-26 Hitachi Ltd
JPS60228932A (ja) * 1984-04-27 1985-11-14 Komatsu Denshi Kinzoku Kk 光加熱炉用温度測定装置
JPH047820B2 (ja) * 1984-04-27 1992-02-13 Komatsu Denshi Kinzoku Kk
JPS62203424U (ja) * 1986-06-13 1987-12-25
JPH0458527A (ja) * 1990-06-28 1992-02-25 Ebara Res Co Ltd 洗浄方法
JPH05259146A (ja) * 1992-03-09 1993-10-08 Hitachi Ltd 半導体製造装置
JPWO2019131791A1 (ja) * 2017-12-27 2020-04-09 株式会社米倉製作所 赤外線焼成装置及びこれを用いた電子部品の焼成方法

Also Published As

Publication number Publication date
JPS5745054B2 (ja) 1982-09-25

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