JPS5678117A - Furnace core tube - Google Patents
Furnace core tubeInfo
- Publication number
- JPS5678117A JPS5678117A JP15542079A JP15542079A JPS5678117A JP S5678117 A JPS5678117 A JP S5678117A JP 15542079 A JP15542079 A JP 15542079A JP 15542079 A JP15542079 A JP 15542079A JP S5678117 A JPS5678117 A JP S5678117A
- Authority
- JP
- Japan
- Prior art keywords
- main body
- tube
- core tube
- quartz glass
- glass layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000011109 contamination Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To eliminate the deformation of a furnace core tube against the use for a long period to make the life of the core tube to be semipermanent and to prevent the contamination from the tube of a material to be treated by a method wherein the inside and the outside surfaces of the silicon carbide tube main body to accommodate the member to be treated are covered with quartz glass layers having the prescribed thickness. CONSTITUTION:The furnace core tube 1 to be used for high temperature oxidation, impurity diffusion of the semiconductor wafer, etc., is constituted of the tube main body 2 consisting of silicon carbide and the quartz glass layers 3 applied or coated on the inside and the outside surfaces of the tube main body. The thickness of the quartz glass layers 3 is made to be 0.5mm. or more. By covering the inside and the outside surfaces of the tube main body 2 with the quartz glass layers 3, the deformation of the core tube 1 to be caused by the use for a long period is eliminated to make the life to be semipermanent and contamination of the material to be treated from the tube main body 2 is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15542079A JPS5678117A (en) | 1979-11-30 | 1979-11-30 | Furnace core tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15542079A JPS5678117A (en) | 1979-11-30 | 1979-11-30 | Furnace core tube |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5678117A true JPS5678117A (en) | 1981-06-26 |
Family
ID=15605602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15542079A Pending JPS5678117A (en) | 1979-11-30 | 1979-11-30 | Furnace core tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5678117A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021520A (en) * | 1983-07-18 | 1985-02-02 | Toshiba Ceramics Co Ltd | Carrying jig for semiconductor heat treatment |
JPS62122212A (en) * | 1985-11-22 | 1987-06-03 | Toshiba Ceramics Co Ltd | Jig for thermal treatment of semiconductor |
JPH0238731U (en) * | 1988-09-07 | 1990-03-15 | ||
JPH0686333U (en) * | 1987-03-30 | 1994-12-13 | ノートン カンパニー | Diffusion furnace components |
WO2010003035A1 (en) * | 2008-07-02 | 2010-01-07 | E. I. Du Pont De Nemours And Company | Coated reactor tube, method of making the coated tube, method for making bismuth containing glass frit powders using aerosol decomposition in said reactor tube. |
US20120231271A1 (en) * | 2009-11-09 | 2012-09-13 | Heraeus Quarzglas Gmbh & Co. Kg | Process for producing a quartz glass cylinder and also support for carrying out the process |
-
1979
- 1979-11-30 JP JP15542079A patent/JPS5678117A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6021520A (en) * | 1983-07-18 | 1985-02-02 | Toshiba Ceramics Co Ltd | Carrying jig for semiconductor heat treatment |
JPS62122212A (en) * | 1985-11-22 | 1987-06-03 | Toshiba Ceramics Co Ltd | Jig for thermal treatment of semiconductor |
JPH0686333U (en) * | 1987-03-30 | 1994-12-13 | ノートン カンパニー | Diffusion furnace components |
JPH0238731U (en) * | 1988-09-07 | 1990-03-15 | ||
WO2010003035A1 (en) * | 2008-07-02 | 2010-01-07 | E. I. Du Pont De Nemours And Company | Coated reactor tube, method of making the coated tube, method for making bismuth containing glass frit powders using aerosol decomposition in said reactor tube. |
CN102105412A (en) * | 2008-07-02 | 2011-06-22 | E.I.内穆尔杜邦公司 | Coated reactor tube, method of making the coated tube, method for making bismuth containing glass frit powders using aerosol decomposition in said reactor tube. |
JP2011526878A (en) * | 2008-07-02 | 2011-10-20 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Method for producing glass frit powder using aerosol decomposition |
US8790782B2 (en) | 2008-07-02 | 2014-07-29 | E I Du Pont De Nemours And Company | Method for making glass frit powders using aerosol decomposition |
CN104725077A (en) * | 2008-07-02 | 2015-06-24 | E.I.内穆尔杜邦公司 | Coated reactor tube |
US20120231271A1 (en) * | 2009-11-09 | 2012-09-13 | Heraeus Quarzglas Gmbh & Co. Kg | Process for producing a quartz glass cylinder and also support for carrying out the process |
US8783069B2 (en) * | 2009-11-09 | 2014-07-22 | Heraeus Quarzglas Gmbh & Co. Kg | Process for producing a quartz glass cylinder and also support for carrying out the process |
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