JPS54134555A - Heat treatment unit - Google Patents

Heat treatment unit

Info

Publication number
JPS54134555A
JPS54134555A JP4296078A JP4296078A JPS54134555A JP S54134555 A JPS54134555 A JP S54134555A JP 4296078 A JP4296078 A JP 4296078A JP 4296078 A JP4296078 A JP 4296078A JP S54134555 A JPS54134555 A JP S54134555A
Authority
JP
Japan
Prior art keywords
wafer
susceptor
heat
reflection
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4296078A
Other languages
Japanese (ja)
Inventor
Kiyoshi Akase
Seishi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4296078A priority Critical patent/JPS54134555A/en
Publication of JPS54134555A publication Critical patent/JPS54134555A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a heat treatment unit which can prevent wafer defects by fitting a heat reflection material near a coil. CONSTITUTION:First, wafer 11 is put on susceptor 12 so that one main face of wafer 11 may be brought into contact with susceptor 12 and is put into quartz tube 13. Next, a voltage is applied to coil 14 to subject susceptor 12 to induction heating. Consequently, the temperature of wafer 11 on susceptor 12 rises due to the heat conduction from susceptor 12 and the reflection heat dependent upon reflection plate 21. Thought the radiated heat from susceptor 12 is reflected by reflection plate 21, the needless heated radiated heat is emitted from exhaustion exit 16 which epitaxial furnace main body 15 has. Continuously, H2 is flowed into quartz tube 13 as carrier gas, and reactive gas such as silicon tetrachloride is injected to grow a single crystal Si layer on wafer 11. As a result, the temperature rise of wafer 11 is caused by the temperature rise from the lower face of wafer 11 dependent upon the heat conduction from sucseptor 12 and the temperature rise from the upper face of wafer 11 dependent upon the reflection heat from reflection plate 21 which reflects the radiated heat from susceptor 12, and wafer 11 is heated from the upper face and the lower face, and the temperature difference in the wafer face is eliminated.
JP4296078A 1978-04-11 1978-04-11 Heat treatment unit Pending JPS54134555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4296078A JPS54134555A (en) 1978-04-11 1978-04-11 Heat treatment unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4296078A JPS54134555A (en) 1978-04-11 1978-04-11 Heat treatment unit

Publications (1)

Publication Number Publication Date
JPS54134555A true JPS54134555A (en) 1979-10-19

Family

ID=12650587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4296078A Pending JPS54134555A (en) 1978-04-11 1978-04-11 Heat treatment unit

Country Status (1)

Country Link
JP (1) JPS54134555A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130419A (en) * 1981-02-04 1982-08-12 Sharp Corp Heat treatment for semiconductor
JPS57203544U (en) * 1981-06-19 1982-12-24
EP0147967A2 (en) * 1983-12-09 1985-07-10 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130419A (en) * 1981-02-04 1982-08-12 Sharp Corp Heat treatment for semiconductor
JPS57203544U (en) * 1981-06-19 1982-12-24
EP0147967A2 (en) * 1983-12-09 1985-07-10 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition

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