JPS54134555A - Heat treatment unit - Google Patents
Heat treatment unitInfo
- Publication number
- JPS54134555A JPS54134555A JP4296078A JP4296078A JPS54134555A JP S54134555 A JPS54134555 A JP S54134555A JP 4296078 A JP4296078 A JP 4296078A JP 4296078 A JP4296078 A JP 4296078A JP S54134555 A JPS54134555 A JP S54134555A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- susceptor
- heat
- reflection
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a heat treatment unit which can prevent wafer defects by fitting a heat reflection material near a coil. CONSTITUTION:First, wafer 11 is put on susceptor 12 so that one main face of wafer 11 may be brought into contact with susceptor 12 and is put into quartz tube 13. Next, a voltage is applied to coil 14 to subject susceptor 12 to induction heating. Consequently, the temperature of wafer 11 on susceptor 12 rises due to the heat conduction from susceptor 12 and the reflection heat dependent upon reflection plate 21. Thought the radiated heat from susceptor 12 is reflected by reflection plate 21, the needless heated radiated heat is emitted from exhaustion exit 16 which epitaxial furnace main body 15 has. Continuously, H2 is flowed into quartz tube 13 as carrier gas, and reactive gas such as silicon tetrachloride is injected to grow a single crystal Si layer on wafer 11. As a result, the temperature rise of wafer 11 is caused by the temperature rise from the lower face of wafer 11 dependent upon the heat conduction from sucseptor 12 and the temperature rise from the upper face of wafer 11 dependent upon the reflection heat from reflection plate 21 which reflects the radiated heat from susceptor 12, and wafer 11 is heated from the upper face and the lower face, and the temperature difference in the wafer face is eliminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4296078A JPS54134555A (en) | 1978-04-11 | 1978-04-11 | Heat treatment unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4296078A JPS54134555A (en) | 1978-04-11 | 1978-04-11 | Heat treatment unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54134555A true JPS54134555A (en) | 1979-10-19 |
Family
ID=12650587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4296078A Pending JPS54134555A (en) | 1978-04-11 | 1978-04-11 | Heat treatment unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54134555A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57130419A (en) * | 1981-02-04 | 1982-08-12 | Sharp Corp | Heat treatment for semiconductor |
JPS57203544U (en) * | 1981-06-19 | 1982-12-24 | ||
EP0147967A2 (en) * | 1983-12-09 | 1985-07-10 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
-
1978
- 1978-04-11 JP JP4296078A patent/JPS54134555A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57130419A (en) * | 1981-02-04 | 1982-08-12 | Sharp Corp | Heat treatment for semiconductor |
JPS57203544U (en) * | 1981-06-19 | 1982-12-24 | ||
EP0147967A2 (en) * | 1983-12-09 | 1985-07-10 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
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