JPS5749254A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve the integration of a semiconductor device by connecting a polysilicon layer with holes to an impurity region formed in a substrate, connecting the polysilicon layer to the metallic wiring layer at the part except the hole, thereby enabling to reduce the allowance between the metallic wires. CONSTITUTION:In a contacting system for connecting metallic wires to reduce the resistance of a diffused layer on an impurity region, a polysilicon layer 316 is interposed between an impurity region 309 and a wiring layer 302. The layers 309 and 316 are contacted through the hole 307 formed at an insulating film 317, and a wire 302 and the layer 306 are contacted via a hole 308 of an insulaing film 316. The position of the hole 308 is formed on the region different from the position of the hole 307. Thus, the deterioration in the characteristics due to the displacement of the position at the time of etching can be prevented, it can eliminate the need for roundabout of the wire 302. For example, other metallic wiring layers 301, 303, or the like can be formed on the layer 306, thereby enabling to improve the integration of the semiconductor device.