JPS5693338A - Planar semiconductor device and method and apparatus for manufacturing same - Google Patents
Planar semiconductor device and method and apparatus for manufacturing sameInfo
- Publication number
- JPS5693338A JPS5693338A JP7674780A JP7674780A JPS5693338A JP S5693338 A JPS5693338 A JP S5693338A JP 7674780 A JP7674780 A JP 7674780A JP 7674780 A JP7674780 A JP 7674780A JP S5693338 A JPS5693338 A JP S5693338A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- connecting wires
- copper
- assembly tape
- planar semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 230000002829 reductive effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L2924/20—Parameters
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- H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
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- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792923440 DE2923440A1 (de) | 1979-06-09 | 1979-06-09 | Verfahren zum befestigen und/oder elektrischen verbinden von halbleiterkoerpern und/oder von deren elektrisch leitenden metallteilen |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5693338A true JPS5693338A (en) | 1981-07-28 |
JPS6366055B2 JPS6366055B2 (ja) | 1988-12-19 |
Family
ID=6072868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7674780A Granted JPS5693338A (en) | 1979-06-09 | 1980-06-09 | Planar semiconductor device and method and apparatus for manufacturing same |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0020857B1 (ja) |
JP (1) | JPS5693338A (ja) |
DE (2) | DE2923440A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5754337A (en) * | 1980-09-19 | 1982-03-31 | Toshiba Corp | Assembling apparatus for semiconductor device |
JPS60225450A (ja) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | 半導体装置の製造法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58169918A (ja) * | 1982-03-31 | 1983-10-06 | Hitachi Ltd | ワイヤボンダ |
IT1210953B (it) * | 1982-11-19 | 1989-09-29 | Ates Componenti Elettron | Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile. |
JPH088255B2 (ja) * | 1990-02-20 | 1996-01-29 | 株式会社東芝 | 半導体基板表面処理方法および半導体基板表面処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1439349B2 (de) * | 1964-03-26 | 1971-02-25 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zur serienfertigung von halbleiterbauelementen |
DE1514561C3 (de) * | 1965-09-06 | 1975-10-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum serienmäßigen Herstellen von Halbleiterbauelementen |
DE1627649C3 (de) * | 1967-09-29 | 1973-10-11 | Veb Elektromat, X 8080 Dresden | Vorrichtung zum flächigen stoff schlussigen Verbinden eines Halbleiter korpers mit einem Metallstreifen mittels |
GB1275343A (en) * | 1970-04-02 | 1972-05-24 | Ferranti Ltd | Improvements relating to lead frames for use with semiconductor devices |
NL7204573A (ja) * | 1972-04-06 | 1973-10-09 | ||
US3982317A (en) * | 1975-07-31 | 1976-09-28 | Sprague Electric Company | Method for continuous assembly and batch molding of transistor packages |
DE2546443C3 (de) * | 1975-10-16 | 1979-04-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Zusammengesetzte Mikroschaltung und Verfahren zu ihrer Herstellung |
-
1979
- 1979-06-09 DE DE19792923440 patent/DE2923440A1/de not_active Withdrawn
-
1980
- 1980-03-08 DE DE8080101185T patent/DE3068157D1/de not_active Expired
- 1980-03-08 EP EP80101185A patent/EP0020857B1/de not_active Expired
- 1980-06-09 JP JP7674780A patent/JPS5693338A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5754337A (en) * | 1980-09-19 | 1982-03-31 | Toshiba Corp | Assembling apparatus for semiconductor device |
JPS60225450A (ja) * | 1984-04-24 | 1985-11-09 | Furukawa Electric Co Ltd:The | 半導体装置の製造法 |
JPH0558259B2 (ja) * | 1984-04-24 | 1993-08-26 | Furukawa Electric Co Ltd |
Also Published As
Publication number | Publication date |
---|---|
DE3068157D1 (en) | 1984-07-19 |
DE2923440A1 (de) | 1980-12-11 |
EP0020857B1 (de) | 1984-06-13 |
EP0020857A1 (de) | 1981-01-07 |
JPS6366055B2 (ja) | 1988-12-19 |
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