JPS5610954A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5610954A JPS5610954A JP8544979A JP8544979A JPS5610954A JP S5610954 A JPS5610954 A JP S5610954A JP 8544979 A JP8544979 A JP 8544979A JP 8544979 A JP8544979 A JP 8544979A JP S5610954 A JPS5610954 A JP S5610954A
- Authority
- JP
- Japan
- Prior art keywords
- capacity
- layer
- electrode
- layers
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010408 film Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To provide a semiconductor device which has a small-sized, stable and large capacity capacitor, by providing the first electrode through an insulating film on a semiconductor substrate, superimposing the second electrode through an insulating film thereon and connecting the second electrode to a substrate. CONSTITUTION:A thin film portion 14 is selectively formed on an SiO2 film 13 on an N-type layer 12 of a P-type Si substrate 11. Doped polysilicon layer 15 and SiO2 layer 16 are selectively laminated thereon, and a thin film portion 17 is formed on the layer 16. Then, openings are perforated at the layers 16 and 13, and aluminum electrodes 18, 19 are formed respectively through the openings. According to this configuration a capacity formed by the layers 12-14-15 and a capacity formed by the layers 15-17-18 are connected in parallel with the same area but with increased capacity without P-N junction capacity, and the capacity is accordingly constant irrespective of the voltage applied between the electrodes 18 and 19. Even if voltage applied on the polysilicon layer 15, the metal electrode 18 and the N-layer 12 is inverted, no affect is exerted to the capacity nor temperature coefficient is lncorporated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8544979A JPS5610954A (en) | 1979-07-05 | 1979-07-05 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8544979A JPS5610954A (en) | 1979-07-05 | 1979-07-05 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5610954A true JPS5610954A (en) | 1981-02-03 |
Family
ID=13859182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8544979A Pending JPS5610954A (en) | 1979-07-05 | 1979-07-05 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5610954A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582058A (en) * | 1981-06-26 | 1983-01-07 | Seiko Epson Corp | Capacitor |
| JPS58222563A (en) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | Semiconductor photodetecting device |
| JP2016162898A (en) * | 2015-03-02 | 2016-09-05 | トヨタ自動車株式会社 | Semiconductor device |
-
1979
- 1979-07-05 JP JP8544979A patent/JPS5610954A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582058A (en) * | 1981-06-26 | 1983-01-07 | Seiko Epson Corp | Capacitor |
| JPS58222563A (en) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | Semiconductor photodetecting device |
| JP2016162898A (en) * | 2015-03-02 | 2016-09-05 | トヨタ自動車株式会社 | Semiconductor device |
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