JPS568874A - Bipolar transistor device - Google Patents

Bipolar transistor device

Info

Publication number
JPS568874A
JPS568874A JP8466679A JP8466679A JPS568874A JP S568874 A JPS568874 A JP S568874A JP 8466679 A JP8466679 A JP 8466679A JP 8466679 A JP8466679 A JP 8466679A JP S568874 A JPS568874 A JP S568874A
Authority
JP
Japan
Prior art keywords
collector
voltage
transistor
fet2
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8466679A
Other languages
Japanese (ja)
Inventor
Yoshitaka Tawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP8466679A priority Critical patent/JPS568874A/en
Publication of JPS568874A publication Critical patent/JPS568874A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To eliminate the influence of a variation in collector voltage for current amplification factor and to contrive the improvement of dielectric strength across base and collector by connecting a bipolar transistor and an FET as predetermined wherein Early effect is eliminated. CONSTITUTION:The collector of a bipolar type N-P-N transistor 1 is connected with the source of a junction FET2 and the base of the transistor 1 is connected with the gate of the FET2 to act as a bipolar transistor as a whole. This structure applies reverse bias to the gate of the FET2 against channel to perform normal active operation and acts as an FET in accordance with a change in collector voltage, accordingly, the voltage across the collector and base of the transistor 1 drops by the voltage drop of the channel of the FET2 and reverse dielectric strength increases by the amount of voltage drop. Because the higher voltage across the collector and base generates the more voltage drop in the channel and actual influence on the collector voltage of the transistor 1 will be small, a change in current amplification factor due to a variation in the collector voltage will be reduced.
JP8466679A 1979-07-04 1979-07-04 Bipolar transistor device Pending JPS568874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8466679A JPS568874A (en) 1979-07-04 1979-07-04 Bipolar transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8466679A JPS568874A (en) 1979-07-04 1979-07-04 Bipolar transistor device

Publications (1)

Publication Number Publication Date
JPS568874A true JPS568874A (en) 1981-01-29

Family

ID=13837031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8466679A Pending JPS568874A (en) 1979-07-04 1979-07-04 Bipolar transistor device

Country Status (1)

Country Link
JP (1) JPS568874A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135760A (en) * 1983-01-03 1984-08-04 ゼネラル・エレクトリツク・カンパニイ Normally off semiconductor device and circuit to be with lowconducting resistance
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
JPH022665A (en) * 1987-12-22 1990-01-08 Sgs Thomson Microelettronica Spa Integrated semiconductor device and its manufacture
US5567961A (en) * 1992-08-21 1996-10-22 Hitachi, Ltd. Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
JPS59135760A (en) * 1983-01-03 1984-08-04 ゼネラル・エレクトリツク・カンパニイ Normally off semiconductor device and circuit to be with lowconducting resistance
JPH022665A (en) * 1987-12-22 1990-01-08 Sgs Thomson Microelettronica Spa Integrated semiconductor device and its manufacture
US5567961A (en) * 1992-08-21 1996-10-22 Hitachi, Ltd. Semiconductor device

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