JPS568874A - Bipolar transistor device - Google Patents
Bipolar transistor deviceInfo
- Publication number
- JPS568874A JPS568874A JP8466679A JP8466679A JPS568874A JP S568874 A JPS568874 A JP S568874A JP 8466679 A JP8466679 A JP 8466679A JP 8466679 A JP8466679 A JP 8466679A JP S568874 A JPS568874 A JP S568874A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- voltage
- transistor
- fet2
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 abstract 4
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 230000003503 early effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To eliminate the influence of a variation in collector voltage for current amplification factor and to contrive the improvement of dielectric strength across base and collector by connecting a bipolar transistor and an FET as predetermined wherein Early effect is eliminated. CONSTITUTION:The collector of a bipolar type N-P-N transistor 1 is connected with the source of a junction FET2 and the base of the transistor 1 is connected with the gate of the FET2 to act as a bipolar transistor as a whole. This structure applies reverse bias to the gate of the FET2 against channel to perform normal active operation and acts as an FET in accordance with a change in collector voltage, accordingly, the voltage across the collector and base of the transistor 1 drops by the voltage drop of the channel of the FET2 and reverse dielectric strength increases by the amount of voltage drop. Because the higher voltage across the collector and base generates the more voltage drop in the channel and actual influence on the collector voltage of the transistor 1 will be small, a change in current amplification factor due to a variation in the collector voltage will be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8466679A JPS568874A (en) | 1979-07-04 | 1979-07-04 | Bipolar transistor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8466679A JPS568874A (en) | 1979-07-04 | 1979-07-04 | Bipolar transistor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS568874A true JPS568874A (en) | 1981-01-29 |
Family
ID=13837031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8466679A Pending JPS568874A (en) | 1979-07-04 | 1979-07-04 | Bipolar transistor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568874A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59135760A (en) * | 1983-01-03 | 1984-08-04 | ゼネラル・エレクトリツク・カンパニイ | Normally off semiconductor device and circuit to be with lowconducting resistance |
US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
JPH022665A (en) * | 1987-12-22 | 1990-01-08 | Sgs Thomson Microelettronica Spa | Integrated semiconductor device and its manufacture |
US5567961A (en) * | 1992-08-21 | 1996-10-22 | Hitachi, Ltd. | Semiconductor device |
-
1979
- 1979-07-04 JP JP8466679A patent/JPS568874A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
JPS59135760A (en) * | 1983-01-03 | 1984-08-04 | ゼネラル・エレクトリツク・カンパニイ | Normally off semiconductor device and circuit to be with lowconducting resistance |
JPH022665A (en) * | 1987-12-22 | 1990-01-08 | Sgs Thomson Microelettronica Spa | Integrated semiconductor device and its manufacture |
US5567961A (en) * | 1992-08-21 | 1996-10-22 | Hitachi, Ltd. | Semiconductor device |
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