JPS56148861A - Field effect semiconductor device - Google Patents
Field effect semiconductor deviceInfo
- Publication number
- JPS56148861A JPS56148861A JP5218780A JP5218780A JPS56148861A JP S56148861 A JPS56148861 A JP S56148861A JP 5218780 A JP5218780 A JP 5218780A JP 5218780 A JP5218780 A JP 5218780A JP S56148861 A JPS56148861 A JP S56148861A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor device
- field effect
- effect semiconductor
- latch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent a latch-up of a field effect semiconductor device by opening a channel stop surrounding an insular region in a C-MOS well toward other insular region. CONSTITUTION:An N type MOST a is formed on one conductivity type P type semiconductor substrate. A P type MOST b is formed in an N type well, and opened toward an insular region formed with the N type MOST of a channel stop with U-shape around the P type MOST b. This structure can reduce the current amplification factor beta of a parasitic NPN transistor, i.e. the lateral transistor B and prevent a latch-up.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5218780A JPS56148861A (en) | 1980-04-18 | 1980-04-18 | Field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5218780A JPS56148861A (en) | 1980-04-18 | 1980-04-18 | Field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56148861A true JPS56148861A (en) | 1981-11-18 |
Family
ID=12907795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5218780A Pending JPS56148861A (en) | 1980-04-18 | 1980-04-18 | Field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56148861A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210660A (en) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | Semiconductor device |
JPS627148A (en) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | Complementary semiconductor device and manufacture thereof |
-
1980
- 1980-04-18 JP JP5218780A patent/JPS56148861A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210660A (en) * | 1982-06-01 | 1983-12-07 | Seiko Epson Corp | Semiconductor device |
JPH0534832B2 (en) * | 1982-06-01 | 1993-05-25 | Seiko Epson Corp | |
JPS627148A (en) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | Complementary semiconductor device and manufacture thereof |
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