JPS56148861A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS56148861A
JPS56148861A JP5218780A JP5218780A JPS56148861A JP S56148861 A JPS56148861 A JP S56148861A JP 5218780 A JP5218780 A JP 5218780A JP 5218780 A JP5218780 A JP 5218780A JP S56148861 A JPS56148861 A JP S56148861A
Authority
JP
Japan
Prior art keywords
type
semiconductor device
field effect
effect semiconductor
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5218780A
Other languages
Japanese (ja)
Inventor
Toru Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5218780A priority Critical patent/JPS56148861A/en
Publication of JPS56148861A publication Critical patent/JPS56148861A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent a latch-up of a field effect semiconductor device by opening a channel stop surrounding an insular region in a C-MOS well toward other insular region. CONSTITUTION:An N type MOST a is formed on one conductivity type P type semiconductor substrate. A P type MOST b is formed in an N type well, and opened toward an insular region formed with the N type MOST of a channel stop with U-shape around the P type MOST b. This structure can reduce the current amplification factor beta of a parasitic NPN transistor, i.e. the lateral transistor B and prevent a latch-up.
JP5218780A 1980-04-18 1980-04-18 Field effect semiconductor device Pending JPS56148861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5218780A JPS56148861A (en) 1980-04-18 1980-04-18 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5218780A JPS56148861A (en) 1980-04-18 1980-04-18 Field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS56148861A true JPS56148861A (en) 1981-11-18

Family

ID=12907795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5218780A Pending JPS56148861A (en) 1980-04-18 1980-04-18 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56148861A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device
JPS627148A (en) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol Complementary semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210660A (en) * 1982-06-01 1983-12-07 Seiko Epson Corp Semiconductor device
JPH0534832B2 (en) * 1982-06-01 1993-05-25 Seiko Epson Corp
JPS627148A (en) * 1985-07-03 1987-01-14 Agency Of Ind Science & Technol Complementary semiconductor device and manufacture thereof

Similar Documents

Publication Publication Date Title
GB1357515A (en) Method for manufacturing an mos integrated circuit
GB1524864A (en) Monolithic semiconductor arrangements
JPS56162875A (en) Semiconductor device
JPS5376679A (en) Semiconductor device
JPS56148861A (en) Field effect semiconductor device
JPS5768075A (en) Manufacture of integrated circuit device
JPS5727069A (en) Mos type simiconductor device
JPS56126977A (en) Junction type field effect transistor
JPS6431471A (en) Semiconductor device
JPS52117086A (en) Semiconductor device for touch type switch
JPS5685851A (en) Complementary mos type semiconductor device
GB1534338A (en) Integrated circuits
JPS5772386A (en) Junction type field-effect semiconductor device
JPS5291381A (en) Field effect type semiconductor device
JPS57100767A (en) Mos type semiconductor device
JPS56165356A (en) Mos semiconductor device
JPS5577177A (en) Mos type semiconductor device
JPS5585055A (en) Semiconductor device
JPS55103772A (en) Semiconductor device
JPS5489583A (en) Junction type field effect transistor device
JPS5740983A (en) Semiconductor device and manufacture thereof
JPS57157558A (en) Complementary mis integrated circuit device
JPS5467781A (en) Vertical junction type field effect transistor
JPS52103976A (en) Semiconductor integrated circuit
JPS57170570A (en) Field effect transistor