JPS5687666A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5687666A
JPS5687666A JP16472979A JP16472979A JPS5687666A JP S5687666 A JPS5687666 A JP S5687666A JP 16472979 A JP16472979 A JP 16472979A JP 16472979 A JP16472979 A JP 16472979A JP S5687666 A JPS5687666 A JP S5687666A
Authority
JP
Japan
Prior art keywords
etched
etching
plasma etching
breaking
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16472979A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Yasuhiro Horiike
Takuji Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16472979A priority Critical patent/JPS5687666A/en
Publication of JPS5687666A publication Critical patent/JPS5687666A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To enhance the reliability of taper etching and prevent the breaking of Al coated by taperingly etching a material to be etched and then vertically etching it between electrodes.
CONSTITUTION: Photoresist 25 is formed on a material to be etched such as silicon oxide film 26 on silicon single crystal 27, and undercut 24 is formed under resist 25 by etching. Crystal 27 is then set on an electrode of a plasma etching device, and film 26 is etched with CF4, CF4+H2 or other gas to form vertically etched wall 28. The etched wall is tapered as a whole. Thus, the breaking of Al coated onto the etched surface as a wiring material can be prevented surely.
COPYRIGHT: (C)1981,JPO&Japio
JP16472979A 1979-12-20 1979-12-20 Plasma etching method Pending JPS5687666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16472979A JPS5687666A (en) 1979-12-20 1979-12-20 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16472979A JPS5687666A (en) 1979-12-20 1979-12-20 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5687666A true JPS5687666A (en) 1981-07-16

Family

ID=15798785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16472979A Pending JPS5687666A (en) 1979-12-20 1979-12-20 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5687666A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157025A (en) * 1980-05-07 1981-12-04 Nec Corp Manufacture of semiconductor device
JPS5745241A (en) * 1980-09-01 1982-03-15 Fujitsu Ltd Manufacture of semiconductor device
JPS57124440A (en) * 1981-01-27 1982-08-03 Nec Corp Compound etching method
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5817619A (en) * 1981-07-23 1983-02-01 Toshiba Corp Forming method for pattern
JPS58143535A (en) * 1982-02-22 1983-08-26 Hitachi Ltd Manufacture of semiconductor device
US4417947A (en) * 1982-07-16 1983-11-29 Signetics Corporation Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures
JPS5923876A (en) * 1982-07-28 1984-02-07 Hitachi Ltd Etching method
JPS59200420A (en) * 1983-04-28 1984-11-13 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
JPS60261141A (en) * 1984-06-07 1985-12-24 Rohm Co Ltd Semiconductor device and manufacture thereof
JPS6243133A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Manufacture of semiconductor device
US4666737A (en) * 1986-02-11 1987-05-19 Harris Corporation Via metallization using metal fillets
US4702000A (en) * 1986-03-19 1987-10-27 Harris Corporation Technique for elimination of polysilicon stringers in direct moat field oxide structure
JPH0383064A (en) * 1989-07-28 1991-04-09 American Teleph & Telegr Co <Att> Etching of semiconductor device of integrated circuit
US7753167B2 (en) 2005-01-13 2010-07-13 Smc Kabushiki Kaisha Silencer

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157025A (en) * 1980-05-07 1981-12-04 Nec Corp Manufacture of semiconductor device
JPS5745241A (en) * 1980-09-01 1982-03-15 Fujitsu Ltd Manufacture of semiconductor device
JPS57124440A (en) * 1981-01-27 1982-08-03 Nec Corp Compound etching method
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5817619A (en) * 1981-07-23 1983-02-01 Toshiba Corp Forming method for pattern
JPS58143535A (en) * 1982-02-22 1983-08-26 Hitachi Ltd Manufacture of semiconductor device
US4417947A (en) * 1982-07-16 1983-11-29 Signetics Corporation Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures
JPS6214636B2 (en) * 1982-07-28 1987-04-03 Hitachi Ltd
JPS5923876A (en) * 1982-07-28 1984-02-07 Hitachi Ltd Etching method
JPS59200420A (en) * 1983-04-28 1984-11-13 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
JPS60261141A (en) * 1984-06-07 1985-12-24 Rohm Co Ltd Semiconductor device and manufacture thereof
JPS6243133A (en) * 1985-08-20 1987-02-25 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH051977B2 (en) * 1985-08-20 1993-01-11 Mitsubishi Electric Corp
US4666737A (en) * 1986-02-11 1987-05-19 Harris Corporation Via metallization using metal fillets
US4702000A (en) * 1986-03-19 1987-10-27 Harris Corporation Technique for elimination of polysilicon stringers in direct moat field oxide structure
JPH0383064A (en) * 1989-07-28 1991-04-09 American Teleph & Telegr Co <Att> Etching of semiconductor device of integrated circuit
US7753167B2 (en) 2005-01-13 2010-07-13 Smc Kabushiki Kaisha Silencer

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