JPS5687666A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5687666A JPS5687666A JP16472979A JP16472979A JPS5687666A JP S5687666 A JPS5687666 A JP S5687666A JP 16472979 A JP16472979 A JP 16472979A JP 16472979 A JP16472979 A JP 16472979A JP S5687666 A JPS5687666 A JP S5687666A
- Authority
- JP
- Japan
- Prior art keywords
- etched
- etching
- plasma etching
- breaking
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To enhance the reliability of taper etching and prevent the breaking of Al coated by taperingly etching a material to be etched and then vertically etching it between electrodes.
CONSTITUTION: Photoresist 25 is formed on a material to be etched such as silicon oxide film 26 on silicon single crystal 27, and undercut 24 is formed under resist 25 by etching. Crystal 27 is then set on an electrode of a plasma etching device, and film 26 is etched with CF4, CF4+H2 or other gas to form vertically etched wall 28. The etched wall is tapered as a whole. Thus, the breaking of Al coated onto the etched surface as a wiring material can be prevented surely.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16472979A JPS5687666A (en) | 1979-12-20 | 1979-12-20 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16472979A JPS5687666A (en) | 1979-12-20 | 1979-12-20 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5687666A true JPS5687666A (en) | 1981-07-16 |
Family
ID=15798785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16472979A Pending JPS5687666A (en) | 1979-12-20 | 1979-12-20 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687666A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157025A (en) * | 1980-05-07 | 1981-12-04 | Nec Corp | Manufacture of semiconductor device |
JPS5745241A (en) * | 1980-09-01 | 1982-03-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57124440A (en) * | 1981-01-27 | 1982-08-03 | Nec Corp | Compound etching method |
JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5817619A (en) * | 1981-07-23 | 1983-02-01 | Toshiba Corp | Forming method for pattern |
JPS58143535A (en) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | Manufacture of semiconductor device |
US4417947A (en) * | 1982-07-16 | 1983-11-29 | Signetics Corporation | Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures |
JPS5923876A (en) * | 1982-07-28 | 1984-02-07 | Hitachi Ltd | Etching method |
JPS59200420A (en) * | 1983-04-28 | 1984-11-13 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
US4484979A (en) * | 1984-04-16 | 1984-11-27 | At&T Bell Laboratories | Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer |
JPS60261141A (en) * | 1984-06-07 | 1985-12-24 | Rohm Co Ltd | Semiconductor device and manufacture thereof |
JPS6243133A (en) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US4666737A (en) * | 1986-02-11 | 1987-05-19 | Harris Corporation | Via metallization using metal fillets |
US4702000A (en) * | 1986-03-19 | 1987-10-27 | Harris Corporation | Technique for elimination of polysilicon stringers in direct moat field oxide structure |
JPH0383064A (en) * | 1989-07-28 | 1991-04-09 | American Teleph & Telegr Co <Att> | Etching of semiconductor device of integrated circuit |
US7753167B2 (en) | 2005-01-13 | 2010-07-13 | Smc Kabushiki Kaisha | Silencer |
-
1979
- 1979-12-20 JP JP16472979A patent/JPS5687666A/en active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157025A (en) * | 1980-05-07 | 1981-12-04 | Nec Corp | Manufacture of semiconductor device |
JPS5745241A (en) * | 1980-09-01 | 1982-03-15 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57124440A (en) * | 1981-01-27 | 1982-08-03 | Nec Corp | Compound etching method |
JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5817619A (en) * | 1981-07-23 | 1983-02-01 | Toshiba Corp | Forming method for pattern |
JPS58143535A (en) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | Manufacture of semiconductor device |
US4417947A (en) * | 1982-07-16 | 1983-11-29 | Signetics Corporation | Edge profile control during patterning of silicon by dry etching with CCl4 -O2 mixtures |
JPS6214636B2 (en) * | 1982-07-28 | 1987-04-03 | Hitachi Ltd | |
JPS5923876A (en) * | 1982-07-28 | 1984-02-07 | Hitachi Ltd | Etching method |
JPS59200420A (en) * | 1983-04-28 | 1984-11-13 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
US4484979A (en) * | 1984-04-16 | 1984-11-27 | At&T Bell Laboratories | Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer |
JPS60261141A (en) * | 1984-06-07 | 1985-12-24 | Rohm Co Ltd | Semiconductor device and manufacture thereof |
JPS6243133A (en) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH051977B2 (en) * | 1985-08-20 | 1993-01-11 | Mitsubishi Electric Corp | |
US4666737A (en) * | 1986-02-11 | 1987-05-19 | Harris Corporation | Via metallization using metal fillets |
US4702000A (en) * | 1986-03-19 | 1987-10-27 | Harris Corporation | Technique for elimination of polysilicon stringers in direct moat field oxide structure |
JPH0383064A (en) * | 1989-07-28 | 1991-04-09 | American Teleph & Telegr Co <Att> | Etching of semiconductor device of integrated circuit |
US7753167B2 (en) | 2005-01-13 | 2010-07-13 | Smc Kabushiki Kaisha | Silencer |
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