JPS5687372A - Semiconductor type measuring diaphragm - Google Patents

Semiconductor type measuring diaphragm

Info

Publication number
JPS5687372A
JPS5687372A JP16412479A JP16412479A JPS5687372A JP S5687372 A JPS5687372 A JP S5687372A JP 16412479 A JP16412479 A JP 16412479A JP 16412479 A JP16412479 A JP 16412479A JP S5687372 A JPS5687372 A JP S5687372A
Authority
JP
Japan
Prior art keywords
section
resistors
electrostrictive
gauge
measuring diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16412479A
Other languages
Japanese (ja)
Inventor
Michitaka Shimazoe
Yoshitaka Matsuoka
Ryozo Akaha
Yukio Takahashi
Tomomasa Yoshida
Satoshi Shimada
Akio Yasukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16412479A priority Critical patent/JPS5687372A/en
Publication of JPS5687372A publication Critical patent/JPS5687372A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To eliminate the nonlinearity on the low-tension region of the subject diaphragm by a method wherein the surface of the semiconductor single crystal substrate is turned toward (110) or (211) direction and a gauge resistance is provided in parallel to the crystal axis of electrostrictive section <111>. CONSTITUTION:The measuring diaphragm 56, consists of N type single crystal Si having (110) face whereon a thin section 62 to be used as an annular electrostrictive section and having a center rigid body 58 in the center and a thick fixed section 60 on the outer circumference, is formed. Along the <111> axial radial direction of the electrostrictive section 62, a plurality of p type gauge resistors 64 are formed. Two gauge resistors are formed in the vicinity of the outer circumferential fixing section 60, other two gauge resistors are provided in the viciniy of the center rigid body 58 and power is outputted by assembling these resistors into the Wheatstone bridge.
JP16412479A 1979-12-19 1979-12-19 Semiconductor type measuring diaphragm Pending JPS5687372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16412479A JPS5687372A (en) 1979-12-19 1979-12-19 Semiconductor type measuring diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16412479A JPS5687372A (en) 1979-12-19 1979-12-19 Semiconductor type measuring diaphragm

Publications (1)

Publication Number Publication Date
JPS5687372A true JPS5687372A (en) 1981-07-15

Family

ID=15787193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16412479A Pending JPS5687372A (en) 1979-12-19 1979-12-19 Semiconductor type measuring diaphragm

Country Status (1)

Country Link
JP (1) JPS5687372A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021025966A (en) * 2019-08-08 2021-02-22 ローム株式会社 MEMS sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169678A (en) * 1974-11-06 1976-06-16 Philips Nv
JPS5232236A (en) * 1975-09-05 1977-03-11 Toshiba Corp Testing device for interrupt processing circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169678A (en) * 1974-11-06 1976-06-16 Philips Nv
JPS5232236A (en) * 1975-09-05 1977-03-11 Toshiba Corp Testing device for interrupt processing circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021025966A (en) * 2019-08-08 2021-02-22 ローム株式会社 MEMS sensor
US11643324B2 (en) 2019-08-08 2023-05-09 Rohm Co., Ltd. MEMS sensor

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