JPS5684619A - Nonpolluting method of gas for semiconductor - Google Patents

Nonpolluting method of gas for semiconductor

Info

Publication number
JPS5684619A
JPS5684619A JP16189779A JP16189779A JPS5684619A JP S5684619 A JPS5684619 A JP S5684619A JP 16189779 A JP16189779 A JP 16189779A JP 16189779 A JP16189779 A JP 16189779A JP S5684619 A JPS5684619 A JP S5684619A
Authority
JP
Japan
Prior art keywords
inorg
semiconductors
salts
aqueous alkali
alkali hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16189779A
Other languages
Japanese (ja)
Other versions
JPS6038968B2 (en
Inventor
Tadashi Karaki
Masaru Saotome
Tomoharu Najima
Kaoru Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SANGYO GIJUTSU KK
Sumitomo Seika Chemicals Co Ltd
Original Assignee
NIPPON SANGYO GIJUTSU KK
Seitetsu Kagaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SANGYO GIJUTSU KK, Seitetsu Kagaku Co Ltd filed Critical NIPPON SANGYO GIJUTSU KK
Priority to JP54161897A priority Critical patent/JPS6038968B2/en
Publication of JPS5684619A publication Critical patent/JPS5684619A/en
Publication of JPS6038968B2 publication Critical patent/JPS6038968B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Treating Waste Gases (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To remove harmful gases for semiconductors virtually perfectly by absorbing the gases for semiconductors by using a rotary type fine foam generator and using aqueous alkali hydroxide soln. contg. inorg. salts as absorbing liquid.
CONSTITUTION: Gases for semiconductors such as silane, arsine, and phosphine are absorbed and removed by using aqueous alkali hydroxide soln. contg. inorg. salts as absorbing liquid and using a rotary type fine foam generator. For example, 5.5l water is put into a "Rotary Atomizer Model TOPCA-L-2" and further 120g NaCl and 40g NaOH are put therein and these are dissolved. While a rotor is being rotated at 2,500 revolutions per minute, pure silane was introduced at the rate of 0.2W2.5l/min, but the phenomena such as explosion and combustion at the gas releasing port were not observed. Suitable concn. of inorg. salts in the absorbing liquid is 0.5W20wt%, and the suitable concn. of the aqueous alkali hydroxide soln. is 0.2W10.0wt%.
COPYRIGHT: (C)1981,JPO&Japio
JP54161897A 1979-12-12 1979-12-12 Semiconductor gas abatement law Expired JPS6038968B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54161897A JPS6038968B2 (en) 1979-12-12 1979-12-12 Semiconductor gas abatement law

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54161897A JPS6038968B2 (en) 1979-12-12 1979-12-12 Semiconductor gas abatement law

Publications (2)

Publication Number Publication Date
JPS5684619A true JPS5684619A (en) 1981-07-10
JPS6038968B2 JPS6038968B2 (en) 1985-09-04

Family

ID=15744082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54161897A Expired JPS6038968B2 (en) 1979-12-12 1979-12-12 Semiconductor gas abatement law

Country Status (1)

Country Link
JP (1) JPS6038968B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794323A (en) * 1980-12-03 1982-06-11 Stanley Electric Co Ltd Treating method for waste gas of cvd apparatus
JPS6142321A (en) * 1984-08-06 1986-02-28 Sony Corp Apparatus for treating silane gas
JPS6359337A (en) * 1986-08-30 1988-03-15 Furukawa Electric Co Ltd:The Method and apparatus for treating exhaust gas
JPS63236520A (en) * 1987-03-24 1988-10-03 Ube Ind Ltd Harmful exhaust gas removing agent
WO1995000805A1 (en) * 1993-06-17 1995-01-05 DAS-Dünnschicht Anlagen Systeme GmbH Dresden Exhaust gas cleaning process and installation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12006750B2 (en) 2019-05-16 2024-06-11 Sugatsune Kogyo Co., Ltd. Hinge having damper and coil spring

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038968A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Data transmission equipment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038968A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Data transmission equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5794323A (en) * 1980-12-03 1982-06-11 Stanley Electric Co Ltd Treating method for waste gas of cvd apparatus
JPS6142321A (en) * 1984-08-06 1986-02-28 Sony Corp Apparatus for treating silane gas
JPH0331085B2 (en) * 1984-08-06 1991-05-02 Sonii Kk
JPS6359337A (en) * 1986-08-30 1988-03-15 Furukawa Electric Co Ltd:The Method and apparatus for treating exhaust gas
JPS63236520A (en) * 1987-03-24 1988-10-03 Ube Ind Ltd Harmful exhaust gas removing agent
JPH0416211B2 (en) * 1987-03-24 1992-03-23 Ube Industries
WO1995000805A1 (en) * 1993-06-17 1995-01-05 DAS-Dünnschicht Anlagen Systeme GmbH Dresden Exhaust gas cleaning process and installation

Also Published As

Publication number Publication date
JPS6038968B2 (en) 1985-09-04

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