JPS5679245A - Ion sensor - Google Patents
Ion sensorInfo
- Publication number
- JPS5679245A JPS5679245A JP15725179A JP15725179A JPS5679245A JP S5679245 A JPS5679245 A JP S5679245A JP 15725179 A JP15725179 A JP 15725179A JP 15725179 A JP15725179 A JP 15725179A JP S5679245 A JPS5679245 A JP S5679245A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- gate insulating
- electrolyte
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
PURPOSE: To permit an ion sensor to measure stably for a long time by forming the gate insulating film of an insulated-gate type transistor of specific layers.
CONSTITUTION: An electrolyte is allowed to contact directly with a gate insulating film of an insulated-gate type transistor to measure the ion activity in the electrolyte. The gate insulating film has a four-layer structure comprising an silicon oxide layer, a silicon nitride or aluminium oxide layer, an inorganic layer and an organic layer. The contact surface of the inorganic layer with the organic layer has been roughened. The layer having the roughened surface is, for example, a porous inorganic layer or a layer of glass which fuses at a low temperature.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15725179A JPS5679245A (en) | 1979-12-03 | 1979-12-03 | Ion sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15725179A JPS5679245A (en) | 1979-12-03 | 1979-12-03 | Ion sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5679245A true JPS5679245A (en) | 1981-06-29 |
JPS6138821B2 JPS6138821B2 (en) | 1986-09-01 |
Family
ID=15645548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15725179A Granted JPS5679245A (en) | 1979-12-03 | 1979-12-03 | Ion sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5679245A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111454A (en) * | 1980-02-06 | 1981-09-03 | Kuraray Co Ltd | Fet sensor |
JPS6270749A (en) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | Fet sensor and its preparation |
JPH05133935A (en) * | 1991-08-21 | 1993-05-28 | Takeshi Nomura | Ion sensitive field-effect transistor |
JP2009300272A (en) * | 2008-06-13 | 2009-12-24 | Rohm Co Ltd | Ion sensor |
-
1979
- 1979-12-03 JP JP15725179A patent/JPS5679245A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111454A (en) * | 1980-02-06 | 1981-09-03 | Kuraray Co Ltd | Fet sensor |
JPS6217702B2 (en) * | 1980-02-06 | 1987-04-18 | Kuraray Co | |
JPS6270749A (en) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | Fet sensor and its preparation |
JPH05133935A (en) * | 1991-08-21 | 1993-05-28 | Takeshi Nomura | Ion sensitive field-effect transistor |
JP2009300272A (en) * | 2008-06-13 | 2009-12-24 | Rohm Co Ltd | Ion sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS6138821B2 (en) | 1986-09-01 |
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