JPS5679245A - Ion sensor - Google Patents

Ion sensor

Info

Publication number
JPS5679245A
JPS5679245A JP15725179A JP15725179A JPS5679245A JP S5679245 A JPS5679245 A JP S5679245A JP 15725179 A JP15725179 A JP 15725179A JP 15725179 A JP15725179 A JP 15725179A JP S5679245 A JPS5679245 A JP S5679245A
Authority
JP
Japan
Prior art keywords
layer
insulating film
gate insulating
electrolyte
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15725179A
Other languages
Japanese (ja)
Other versions
JPS6138821B2 (en
Inventor
Kiyoo Shimada
Makoto Yano
Kyoichiro Shibatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kuraray Co Ltd
Original Assignee
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co Ltd filed Critical Kuraray Co Ltd
Priority to JP15725179A priority Critical patent/JPS5679245A/en
Publication of JPS5679245A publication Critical patent/JPS5679245A/en
Publication of JPS6138821B2 publication Critical patent/JPS6138821B2/ja
Granted legal-status Critical Current

Links

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To permit an ion sensor to measure stably for a long time by forming the gate insulating film of an insulated-gate type transistor of specific layers.
CONSTITUTION: An electrolyte is allowed to contact directly with a gate insulating film of an insulated-gate type transistor to measure the ion activity in the electrolyte. The gate insulating film has a four-layer structure comprising an silicon oxide layer, a silicon nitride or aluminium oxide layer, an inorganic layer and an organic layer. The contact surface of the inorganic layer with the organic layer has been roughened. The layer having the roughened surface is, for example, a porous inorganic layer or a layer of glass which fuses at a low temperature.
COPYRIGHT: (C)1981,JPO&Japio
JP15725179A 1979-12-03 1979-12-03 Ion sensor Granted JPS5679245A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15725179A JPS5679245A (en) 1979-12-03 1979-12-03 Ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15725179A JPS5679245A (en) 1979-12-03 1979-12-03 Ion sensor

Publications (2)

Publication Number Publication Date
JPS5679245A true JPS5679245A (en) 1981-06-29
JPS6138821B2 JPS6138821B2 (en) 1986-09-01

Family

ID=15645548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15725179A Granted JPS5679245A (en) 1979-12-03 1979-12-03 Ion sensor

Country Status (1)

Country Link
JP (1) JPS5679245A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111454A (en) * 1980-02-06 1981-09-03 Kuraray Co Ltd Fet sensor
JPS6270749A (en) * 1985-09-25 1987-04-01 Toshiba Corp Fet sensor and its preparation
JPH05133935A (en) * 1991-08-21 1993-05-28 Takeshi Nomura Ion sensitive field-effect transistor
JP2009300272A (en) * 2008-06-13 2009-12-24 Rohm Co Ltd Ion sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111454A (en) * 1980-02-06 1981-09-03 Kuraray Co Ltd Fet sensor
JPS6217702B2 (en) * 1980-02-06 1987-04-18 Kuraray Co
JPS6270749A (en) * 1985-09-25 1987-04-01 Toshiba Corp Fet sensor and its preparation
JPH05133935A (en) * 1991-08-21 1993-05-28 Takeshi Nomura Ion sensitive field-effect transistor
JP2009300272A (en) * 2008-06-13 2009-12-24 Rohm Co Ltd Ion sensor

Also Published As

Publication number Publication date
JPS6138821B2 (en) 1986-09-01

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