JPS5674985A - Forming method for protective film for luminous element - Google Patents
Forming method for protective film for luminous elementInfo
- Publication number
- JPS5674985A JPS5674985A JP15395679A JP15395679A JPS5674985A JP S5674985 A JPS5674985 A JP S5674985A JP 15395679 A JP15395679 A JP 15395679A JP 15395679 A JP15395679 A JP 15395679A JP S5674985 A JPS5674985 A JP S5674985A
- Authority
- JP
- Japan
- Prior art keywords
- film
- si3n4
- sio2
- luminous element
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001681 protective effect Effects 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 7
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To increase the adhesive force of an Si3N4 film and prevent the intrusion of oxygen by fitting the Si3N4 film 500A or less thick on to the light-taking surface of the luminous element and further providing the transmitting film or reflecting film of Al2O3 or SiO2 having a prescribed thickness thereon. CONSTITUTION:When the protective film for the luminous element of the semiconductor laser and the like is formed, first the Si3N4 film 500A or less thick is fitted and then the film is coated with the Al2O3 or SiO2 film having a prescribed thickness. To be concrete, in the case when the combination of Si3N4 film with SiO2 film is adopted, Si is used as a target and the spattering is made thereon first in N2 gas and then in the mixture gas wherein N2 and An are mixed in the ratio of 1 to 1, and thus the Si3N4 film of 500A or more and SiO2 film of 3,000Angstrom are laminated continuously. In the case when the combination of Si3N4 layer with Al2O3 film is adopted, Si is replaced by Al and N2 by O2 and they are formed in the same thickness. In this way, the intrusion of O2 into the interface between the surface of the element and Si3N4 film is prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54153956A JPS5837714B2 (en) | 1979-11-24 | 1979-11-24 | Method for forming a protective film on a light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54153956A JPS5837714B2 (en) | 1979-11-24 | 1979-11-24 | Method for forming a protective film on a light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5674985A true JPS5674985A (en) | 1981-06-20 |
| JPS5837714B2 JPS5837714B2 (en) | 1983-08-18 |
Family
ID=15573739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54153956A Expired JPS5837714B2 (en) | 1979-11-24 | 1979-11-24 | Method for forming a protective film on a light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5837714B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130187A (en) * | 1983-12-17 | 1985-07-11 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| US5960021A (en) * | 1995-09-14 | 1999-09-28 | Uniphase Opto Holdings, Inc. | Semiconductor diode laser and method of manufacturing same |
| WO2002015281A2 (en) * | 2000-08-17 | 2002-02-21 | Power Signal Technologies, Inc. | Glass-to-metal hermetically sealed led array |
-
1979
- 1979-11-24 JP JP54153956A patent/JPS5837714B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60130187A (en) * | 1983-12-17 | 1985-07-11 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| US5960021A (en) * | 1995-09-14 | 1999-09-28 | Uniphase Opto Holdings, Inc. | Semiconductor diode laser and method of manufacturing same |
| WO2002015281A2 (en) * | 2000-08-17 | 2002-02-21 | Power Signal Technologies, Inc. | Glass-to-metal hermetically sealed led array |
| WO2002015281A3 (en) * | 2000-08-17 | 2002-05-23 | Power Signal Technologies Inc | Glass-to-metal hermetically sealed led array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5837714B2 (en) | 1983-08-18 |
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