JPS60130187A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS60130187A
JPS60130187A JP23717983A JP23717983A JPS60130187A JP S60130187 A JPS60130187 A JP S60130187A JP 23717983 A JP23717983 A JP 23717983A JP 23717983 A JP23717983 A JP 23717983A JP S60130187 A JPS60130187 A JP S60130187A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
end surface
al2o3
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23717983A
Other languages
Japanese (ja)
Inventor
Naoko Okabe
岡部　尚子
Enyu Ito
伊藤　円雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23717983A priority Critical patent/JPS60130187A/en
Publication of JPS60130187A publication Critical patent/JPS60130187A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the variation in end surface reflectance oby a method wherein the uppermost layer of a protection film adhered on a cavity end surface is formed on an oxygen-impermeable film, thus preventing the oxidization of the end surface protection film. CONSTITUTION:One of cavity cross-sections of a GaAs-GaAlAs series semiconductor laser 1 having an oscillation wavelength, e.g., 8,300Angstrom is coated with Si 3, Al2O3 2 thereon, further Si 3, and Al2O3, respectively. Since this device is formed of Al2O3 in the uppermost layer, the Si 3 is not oxidized; therefore, variation can be prevented from generating in the end surface reflectance.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体レーザ装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor laser device.

（従来例の構成とその問題点） 半導体レーザ装置の発振しきい値電流を下げ、寸だ外部
微分量子効率を向上させるために、半導体レーザ装置の
２つのキャビティ端面のうチ、光を取り出す端面と反対
の端面に、屈折率の異なる物質で多層にコートすること
が行われている。(Conventional structure and its problems) In order to lower the oscillation threshold current of the semiconductor laser device and significantly improve the external differential quantum efficiency, the inside of the two cavity end faces of the semiconductor laser device, the end face from which light is taken out, has been developed. The opposite end face is coated with multiple layers of materials with different refractive indexes.

従来、多層コートを行うには、奇数番目の層としてＡｔ
２０３．５ｉｎ２．５ｉ３Ｎ４などの誘電体を、偶数番
目の層としてＳｉ’ｊｚコートし、偶数回のコーティン
グを行なって最終層はＳｉをコートしていた。第１図は
、従来の多層コートが施さノｔだ半導体レーザの断面図
である。矢印はレーザ光の出射方向を示し、矢印の出て
いる面がキャビティ端面でおる。Conventionally, when performing multilayer coating, At
A dielectric such as 203.5in2.5i3N4 was coated with Si'jz as an even numbered layer, and an even number of coatings were performed with the final layer being coated with Si. FIG. 1 is a cross-sectional view of a conventional multilayer coated semiconductor laser. The arrow indicates the direction in which the laser beam is emitted, and the surface where the arrow appears is the end surface of the cavity.

１は半導体レーザ、２はＡｔ２Ｏ３などの誘電体、３は
Ｓｉである。1 is a semiconductor laser, 2 is a dielectric such as At2O3, and 3 is Si.

この構造の半導体レーザ装置は、最上層がＳｌから形成
されているため、酸化され易く、その結果端面反射率の
変化が起るという問題があった。In the semiconductor laser device having this structure, since the uppermost layer is formed of Sl, it is easily oxidized, and as a result, there is a problem in that the reflectance of the end face changes.

（発明の目的） 本発明は、Ｍ記入点に鑑み、端面保護膜に酸化が起らな
い、半導体レーザ装置を提供するものである。(Objective of the Invention) In view of the point M, the present invention provides a semiconductor laser device in which oxidation does not occur on the end face protection film.

（発明の構成） この目的を達成するために、本発明の半導体レーザ装置
は、キャビティ端面に被着された保護膜の最上層が酸素
不透膜で形成されている。(Structure of the Invention) In order to achieve this object, in the semiconductor laser device of the present invention, the uppermost layer of the protective film deposited on the end face of the cavity is formed of an oxygen-impermeable film.

（実施例の説明） 以下、本発明の一実施例について、図面を参照しながら
説明する。第２図は、本発明の一実施例における半導体
レーザ装置の断面図である。発振波長８３００ＸのＧ　
ａＡ　ｓ　−Ｇ　ａＡｔＡ　ｓ系中導体レーザ１の一方
のキャビティ端面に、Ｓｉ３が６００Ｘの厚さにコーテ
ィングされ、その上にＡｔ２０５２が１２２０Ｘの厚さ
に、さらにＳ１３、Ａｔ２Ｏ３２がそれぞれ６００＾。(Description of Embodiment) Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a sectional view of a semiconductor laser device in one embodiment of the present invention. G with oscillation wavelength of 8300X
One end face of the cavity of the aA s -G aAtAs s medium conductor laser 1 is coated with Si3 to a thickness of 600X, on top of which At2052 is coated to a thickness of 1220X, and S13 and At2O32 are each coated with a thickness of 600^.

］　２２０Ｘの厚すにコーティングされている。] Coated on a 220X thick plate.

以上のように構成された、半導体レーザ装置は最−１一
層がＡｔ２０３２で形成されているので、Ｓ１３が酸化
されることがなく、シたがって端面反射率に変化が小し
ない。In the semiconductor laser device configured as described above, since the first layer is made of At2032, S13 is not oxidized, and therefore the change in the end face reflectance is not small.

なお、本実施例では、端面保護膜の第１層をＳｉとした
が、第；う図に示すように第１層としてＡｔ２０３２、
を第２層としてＳｉ　３を、さらにその上に、Ａｔ２０
５、Ｓｌ、Ａｔ２０６を順次形成してもよい。In this example, the first layer of the end face protection film was made of Si, but as shown in the first figure, At2032, At2032,
Si3 is used as the second layer, and on top of that, At20
5, Sl, and At206 may be formed sequentially.

また、前記実施例では、４層コートとしたが、２層コー
ト以上であれば、偶数個、または奇数個の層数いずれで
もよく、最上層が酸素不透膜で形成されていさえず１１
はよい。Further, in the above embodiment, a four-layer coating was used, but as long as it is two or more layers, an even number or an odd number of layers may be used.
Yes.

（発明の効果） 以上のように、本発明は、妬１１面保護膜の最十層が酸
素不透膜で構成さｔｌ、ているので、錆、ｉ面保護膜に
酸化が起らず、したがって端面反射率が変化せず、その
実用的効果は犬なるものである。(Effects of the Invention) As described above, in the present invention, since the tenth layer of the first-plane protective film is composed of an oxygen-impermeable film, rust and oxidation of the first-plane protective film do not occur. Therefore, the end face reflectance does not change, and the practical effect is excellent.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体レーザ装置の断面図、第２図は本
発明の一実施例の半導体レーザ装（：？；の断面図、 第３図は本発明の他の実施例の半導体レーザ装置の断面
図である。 １・・・半導体レーザ、２・・・Ａｔ２０５．３・・・
Ｓｉ　。FIG. 1 is a cross-sectional view of a conventional semiconductor laser device, FIG. 2 is a cross-sectional view of a semiconductor laser device (:?;) according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a semiconductor laser device according to another embodiment of the present invention. 1... Semiconductor laser, 2... At205.3...
Si.

Claims (2)

【特許請求の範囲】[Claims] （１）　キャビティ端面に、２層以上の保護膜が設けら
れるとともに、ｉ１■記保護膜の最上層が酸素不透膜で
形成されていることを特徴とする半導体レーザ装置。(1) A semiconductor laser device characterized in that two or more protective films are provided on the end face of the cavity, and the uppermost layer of the protective film i1 is formed of an oxygen-impermeable film. （２）　酸素不透膜が、Ａｔ２０３，５１３Ｎ４，５ｉ
０２のいずれかで形成されていること全特徴とする特許
請求の範囲第（１）項記載の半導体レーザ装置。(2) The oxygen impermeable membrane is At203,513N4,5i
02. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is formed of any one of 02 and 02.
JP23717983A 1983-12-17 1983-12-17 Semiconductor laser device Pending JPS60130187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23717983A JPS60130187A (en) 1983-12-17 1983-12-17 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23717983A JPS60130187A (en) 1983-12-17 1983-12-17 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS60130187A true JPS60130187A (en) 1985-07-11

Family

ID=17011541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23717983A Pending JPS60130187A (en) 1983-12-17 1983-12-17 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS60130187A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829531A (en) * 1986-08-09 1989-05-09 Sharp Kabushiki Kaisha External resonator type semiconductor laser
US4853911A (en) * 1986-06-13 1989-08-01 Semiconductor Energy Laboratory Co., Ltd. Optical disc memory system utilizing a smectic chiral liquid crystal
JPH01283894A (en) * 1988-05-10 1989-11-15 Sanyo Electric Co Ltd Semiconductor laser
US4951292A (en) * 1988-07-01 1990-08-21 U.S. Philips Corp. Coating for DFB/DBR laser diodes
JPH03101183A (en) * 1989-09-07 1991-04-25 Internatl Business Mach Corp <Ibm> Semiconductor laser diode and method of mirror passivation of the same
US5960021A (en) * 1995-09-14 1999-09-28 Uniphase Opto Holdings, Inc. Semiconductor diode laser and method of manufacturing same
US8094696B2 (en) 2009-03-25 2012-01-10 Mitsubishi Electric Corporation Semiconductor laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674985A (en) * 1979-11-24 1981-06-20 Sharp Corp Forming method for protective film for luminous element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5674985A (en) * 1979-11-24 1981-06-20 Sharp Corp Forming method for protective film for luminous element

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853911A (en) * 1986-06-13 1989-08-01 Semiconductor Energy Laboratory Co., Ltd. Optical disc memory system utilizing a smectic chiral liquid crystal
US4829531A (en) * 1986-08-09 1989-05-09 Sharp Kabushiki Kaisha External resonator type semiconductor laser
JPH01283894A (en) * 1988-05-10 1989-11-15 Sanyo Electric Co Ltd Semiconductor laser
US4951292A (en) * 1988-07-01 1990-08-21 U.S. Philips Corp. Coating for DFB/DBR laser diodes
JPH03101183A (en) * 1989-09-07 1991-04-25 Internatl Business Mach Corp <Ibm> Semiconductor laser diode and method of mirror passivation of the same
US5960021A (en) * 1995-09-14 1999-09-28 Uniphase Opto Holdings, Inc. Semiconductor diode laser and method of manufacturing same
US8094696B2 (en) 2009-03-25 2012-01-10 Mitsubishi Electric Corporation Semiconductor laser device
US8233514B2 (en) 2009-03-25 2012-07-31 Mitsubishi Electric Corporation Semiconductor laser device

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