JPS5670446A - Measuring method and measuring device employed therefor - Google Patents

Measuring method and measuring device employed therefor

Info

Publication number
JPS5670446A
JPS5670446A JP14822879A JP14822879A JPS5670446A JP S5670446 A JPS5670446 A JP S5670446A JP 14822879 A JP14822879 A JP 14822879A JP 14822879 A JP14822879 A JP 14822879A JP S5670446 A JPS5670446 A JP S5670446A
Authority
JP
Japan
Prior art keywords
probe
central part
resistance
wafer
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14822879A
Other languages
Japanese (ja)
Inventor
Kuninori Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14822879A priority Critical patent/JPS5670446A/en
Publication of JPS5670446A publication Critical patent/JPS5670446A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure the electrical characteristics of a semiconductor wafer and the like easily and precisely by applying a light to the central part of a point of measurement, taking out an electric signal from the periphery of this central part and thereby reducing the resistance of contact with a probe.
CONSTITUTION: The probe 1 made of tungsten or the like is provided with a hole in the shape of such a slender pipe as an injector needle, and a optical fiber 2 is inserted into this hole. By this constitution, the central part of the point of measurement of the wafer 4 is irradiated through the intermediary of the optical fiber 2, and when the probe 1 contacts with the periphery of the irradiated part, the contact resistance of the probe 1 is lowered by the light, whereby the electrical characteristics of the wafer 4, such as resistance, are measured easily and precisely.
COPYRIGHT: (C)1981,JPO&Japio
JP14822879A 1979-11-15 1979-11-15 Measuring method and measuring device employed therefor Pending JPS5670446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14822879A JPS5670446A (en) 1979-11-15 1979-11-15 Measuring method and measuring device employed therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14822879A JPS5670446A (en) 1979-11-15 1979-11-15 Measuring method and measuring device employed therefor

Publications (1)

Publication Number Publication Date
JPS5670446A true JPS5670446A (en) 1981-06-12

Family

ID=15448134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14822879A Pending JPS5670446A (en) 1979-11-15 1979-11-15 Measuring method and measuring device employed therefor

Country Status (1)

Country Link
JP (1) JPS5670446A (en)

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