JPS5669869A - Manufacture of variable capacity diode - Google Patents

Manufacture of variable capacity diode

Info

Publication number
JPS5669869A
JPS5669869A JP14515879A JP14515879A JPS5669869A JP S5669869 A JPS5669869 A JP S5669869A JP 14515879 A JP14515879 A JP 14515879A JP 14515879 A JP14515879 A JP 14515879A JP S5669869 A JPS5669869 A JP S5669869A
Authority
JP
Japan
Prior art keywords
layer
concentration
variable capacity
diffused
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14515879A
Other languages
Japanese (ja)
Inventor
Kaoru Nakagawa
Tatsumi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14515879A priority Critical patent/JPS5669869A/en
Publication of JPS5669869A publication Critical patent/JPS5669869A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain ideal steep capacity change characteristics by a method wherein a concentration profile is formed in an extremely smooth curve by making up not less than threefold diffusion layers by means of an impurity diffusion method or an ion injecting method. CONSTITUTION:An N<-> epitaxial layer 2 to which P is added is stacked onto an N<+> type Si substrate 1 to which Sb is added, a hole is made to an SiO2 film 7, P is diffused at about decuple surface concentration of the N<-> layer 2, and an N<+> layer 3 is built up. P at concentration about three hundred times as much as the N<+> layer is diffused into the N<+> layer 3 to form an N<+> layer 4, and its thickness is made about 1.2mum. B ions are further injected to form a P<+> layer 5 in about 0.5mum thickness, concentration thereof is about thirty times as much as the N<+> layer 4, and a variable capacity diode is completed. According to this constitution, a concentration profile curve L is smoothed extremely, and a C-V characteristic is obtained which is rectilinear as compared to conventional devices.
JP14515879A 1979-11-09 1979-11-09 Manufacture of variable capacity diode Pending JPS5669869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14515879A JPS5669869A (en) 1979-11-09 1979-11-09 Manufacture of variable capacity diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14515879A JPS5669869A (en) 1979-11-09 1979-11-09 Manufacture of variable capacity diode

Publications (1)

Publication Number Publication Date
JPS5669869A true JPS5669869A (en) 1981-06-11

Family

ID=15378759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14515879A Pending JPS5669869A (en) 1979-11-09 1979-11-09 Manufacture of variable capacity diode

Country Status (1)

Country Link
JP (1) JPS5669869A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6453582A (en) * 1987-08-25 1989-03-01 Toko Inc Variable capacitance diode device
US4827319A (en) * 1985-12-31 1989-05-02 Thomson-Csf Variable capacity diode with hyperabrupt profile and plane structure and the method of forming same
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5854117A (en) * 1995-09-18 1998-12-29 U.S. Philips Corporation Method of manufacturing a varicap diode, a varicap diode, a receiver device, and a TV receiver set

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54109792A (en) * 1978-02-16 1979-08-28 Toko Inc Variable capacity diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54109792A (en) * 1978-02-16 1979-08-28 Toko Inc Variable capacity diode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4827319A (en) * 1985-12-31 1989-05-02 Thomson-Csf Variable capacity diode with hyperabrupt profile and plane structure and the method of forming same
JPS6453582A (en) * 1987-08-25 1989-03-01 Toko Inc Variable capacitance diode device
US4868134A (en) * 1987-08-31 1989-09-19 Toko, Inc. Method of making a variable-capacitance diode device
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5024955A (en) * 1989-01-19 1991-06-18 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
US5854117A (en) * 1995-09-18 1998-12-29 U.S. Philips Corporation Method of manufacturing a varicap diode, a varicap diode, a receiver device, and a TV receiver set

Similar Documents

Publication Publication Date Title
JPS56131942A (en) Manufacture of semiconductor device
JPS5669869A (en) Manufacture of variable capacity diode
JPS5673446A (en) Manufacture of semiconductor device
JPS56124270A (en) Manufacture of semiconductor device
JPS5723239A (en) Manufacture of semiconductor device
JPS5640280A (en) Mos transistor
JPS5753928A (en) Compound semiconductor device
JPS5591181A (en) Field effect semiconductor device and manufacture of the same
JPS5626462A (en) Resistor and the manufacturing process
JPS5529169A (en) Variable capacity diode and manufacturing thereof
JPS54102876A (en) Manufacture for planer type semiconductor device
JPS57133659A (en) Manufacture of polycrystalline semiconductor element
JPS5698856A (en) Semiconductor resistance device
JPS5693370A (en) Manufacture of mos-type semiconductor device
JPS5680154A (en) Production of semiconductor device
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS55107244A (en) Manufacture of semiconductor device
JPS57103347A (en) Manufacture of integrated circuit
JPS5713766A (en) Manufacture of insulated gate type field effect transistor
JPS5492180A (en) Manufacture of semiconductor device
JPS5529174A (en) Manufacturing of triac
JPS56105626A (en) Compound semiconductor thin film single crystal
JPS5649517A (en) Manufacture of semiconductor device
JPS56110225A (en) Manufacture of gaas wafer
JPS5666076A (en) Semiconductor device