JPS5667926A - Processing method - Google Patents

Processing method

Info

Publication number
JPS5667926A
JPS5667926A JP14384379A JP14384379A JPS5667926A JP S5667926 A JPS5667926 A JP S5667926A JP 14384379 A JP14384379 A JP 14384379A JP 14384379 A JP14384379 A JP 14384379A JP S5667926 A JPS5667926 A JP S5667926A
Authority
JP
Japan
Prior art keywords
fluid
rotation center
rotation
nozzle
ejection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14384379A
Other languages
Japanese (ja)
Other versions
JPS5756208B2 (en
Inventor
Keiichi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14384379A priority Critical patent/JPS5667926A/en
Publication of JPS5667926A publication Critical patent/JPS5667926A/en
Publication of JPS5756208B2 publication Critical patent/JPS5756208B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To scour a work without giving damages to a rotation center by a method wherein a fluid is ejected from a nozzle to a position out of the rotation center relatively moving a nozzle against a work fitted at a rotation chuck. CONSTITUTION:A working material 8 such as a semiconducter substrate, etc. is fastened to a rotation chuck 1 which is composed of a holding part 3 and a rotation axis part 4. When a fluid 10 is ejected from a fluid nozzle 2 to perform a scouring, the ejection position is made to be out of the rotation center and at the same time, the nozzle 2 is inclined so that the spread of a fluid after the ejection may be large enough to the radial direction toward the rotation center and may be small to the opposite direction. With this, a rotation center having a slow rotation speed does not receive damages due to the ejection of a high pressure fluid and it is coated with the fluid, thus, the whole surface of a working material being scoured perfectly.
JP14384379A 1979-11-08 1979-11-08 Processing method Granted JPS5667926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14384379A JPS5667926A (en) 1979-11-08 1979-11-08 Processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14384379A JPS5667926A (en) 1979-11-08 1979-11-08 Processing method

Publications (2)

Publication Number Publication Date
JPS5667926A true JPS5667926A (en) 1981-06-08
JPS5756208B2 JPS5756208B2 (en) 1982-11-29

Family

ID=15348233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14384379A Granted JPS5667926A (en) 1979-11-08 1979-11-08 Processing method

Country Status (1)

Country Link
JP (1) JPS5667926A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181644A (en) * 2010-03-01 2011-09-15 Ebara Corp Method and apparatus for cleaning substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0439514U (en) * 1990-07-19 1992-04-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011181644A (en) * 2010-03-01 2011-09-15 Ebara Corp Method and apparatus for cleaning substrate

Also Published As

Publication number Publication date
JPS5756208B2 (en) 1982-11-29

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