JPS5662365A - High voltage-proof mos field effect transistor - Google Patents

High voltage-proof mos field effect transistor

Info

Publication number
JPS5662365A
JPS5662365A JP13759379A JP13759379A JPS5662365A JP S5662365 A JPS5662365 A JP S5662365A JP 13759379 A JP13759379 A JP 13759379A JP 13759379 A JP13759379 A JP 13759379A JP S5662365 A JPS5662365 A JP S5662365A
Authority
JP
Japan
Prior art keywords
junction
proof
bevel angle
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13759379A
Other languages
Japanese (ja)
Inventor
Hitoshi Nagano
Kuniharu Kato
Yuki Shimada
Shusaburo Imai
Kenji Hideshima
Hisashi Haneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13759379A priority Critical patent/JPS5662365A/en
Publication of JPS5662365A publication Critical patent/JPS5662365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To provide a MOS field effect transistor incorporating a high voltage- proof and a low voltage drop during operation by a method wherein a part of a curved surface in P-N junction which is generated by a lateral dispersion of nonpure material when P-N junction face is formed is crossed at a positive bevel angle with a side surface of a groove. CONSTITUTION:When P type dispersion layer is formed, nonpure atom forming P type is longitudinally disposed and at the same time dispersed laterally, P-N<-> junction face 3 is curved at near the end of mask 7. Then, N type source dispersion layer 8 is formed. In this case, N<+>-P junction face to be formed shows a negative bevel angle with respect to the side surface V-shaped groove 4 finally formed, but no trouble is generated during is normal use. Further, V-shaped groove 4 is formed such that is crosses with the curved part of P-N<-> junction face 3 at a positive bevel angle, thereby P-N<-> junction of voltage-proof may be provided to prevent a surface yield in P-N<-> junction at V-shaped side surface.
JP13759379A 1979-10-26 1979-10-26 High voltage-proof mos field effect transistor Pending JPS5662365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13759379A JPS5662365A (en) 1979-10-26 1979-10-26 High voltage-proof mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13759379A JPS5662365A (en) 1979-10-26 1979-10-26 High voltage-proof mos field effect transistor

Publications (1)

Publication Number Publication Date
JPS5662365A true JPS5662365A (en) 1981-05-28

Family

ID=15202321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13759379A Pending JPS5662365A (en) 1979-10-26 1979-10-26 High voltage-proof mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS5662365A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150693A (en) * 1996-09-18 2000-11-21 Advanced Micro Devices Short channel non-self aligned VMOS field effect transistor
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544079A (en) * 1977-06-10 1979-01-12 Sony Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544079A (en) * 1977-06-10 1979-01-12 Sony Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150693A (en) * 1996-09-18 2000-11-21 Advanced Micro Devices Short channel non-self aligned VMOS field effect transistor
US6780713B2 (en) 2001-06-29 2004-08-24 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6806131B2 (en) 2001-06-29 2004-10-19 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6878603B2 (en) 2001-06-29 2005-04-12 Atmel Germany Gmbh Process for manufacturing a DMOS transistor
US6933215B2 (en) 2001-06-29 2005-08-23 Atmel Germany Gmbh Process for doping a semiconductor body
US7064385B2 (en) 2003-09-19 2006-06-20 Atmel Germany Gmbh DMOS-transistor with lateral dopant gradient in drift region and method of producing the same

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