JPS55140267A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55140267A
JPS55140267A JP4823179A JP4823179A JPS55140267A JP S55140267 A JPS55140267 A JP S55140267A JP 4823179 A JP4823179 A JP 4823179A JP 4823179 A JP4823179 A JP 4823179A JP S55140267 A JPS55140267 A JP S55140267A
Authority
JP
Japan
Prior art keywords
layer
electrode
type
region
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4823179A
Other languages
Japanese (ja)
Inventor
Sumuto Seko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4823179A priority Critical patent/JPS55140267A/en
Publication of JPS55140267A publication Critical patent/JPS55140267A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce the di/dt of a semiconductor device at turn-on time by forming an anode electrode on the entire surface of one surface of a thyristor and a partial gate electrode on the other surface thereof, and forming a reverse conducting region to a layer making contact with the anode electrode oppositely to the gate electrode in the layer. CONSTITUTION:A p-type layer 1 is diffused on one surface of an n-type semiconductor substrate 2, a pn-junction J1 is formed therebetween, a p-type layer 3 is formed on the other surface thereof, and a pn-junction J2 is formed between the layer 3 and the substrate 2. An n-type emitter region 4 is then diffused partially in the layer 3, a pn-junction J3 is formed in the boundary of the layer 3, and a cathode electrode 6 is coated on the region 4. Thereafter, a gate electrode 7 is coated on the layer 3 through an emitter and gate facing portion 8, an anode electrode 5 is coated on the entire surface of the layer 1 to form a thyristor. At this time an n-type region 4' is formed in the layer 1 oppositely to the electrode 7, and a gate current is controlled by a bulk effect.
JP4823179A 1979-04-19 1979-04-19 Semiconductor device Pending JPS55140267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4823179A JPS55140267A (en) 1979-04-19 1979-04-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4823179A JPS55140267A (en) 1979-04-19 1979-04-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55140267A true JPS55140267A (en) 1980-11-01

Family

ID=12797657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4823179A Pending JPS55140267A (en) 1979-04-19 1979-04-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55140267A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135479A (en) * 1975-05-20 1976-11-24 Matsushita Electronics Corp Reverse blocking type semiconductor controlled rectifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51135479A (en) * 1975-05-20 1976-11-24 Matsushita Electronics Corp Reverse blocking type semiconductor controlled rectifier

Similar Documents

Publication Publication Date Title
JPS5598858A (en) Gate turn-off thyristor
JPS55133574A (en) Insulated gate field effect transistor
JPS5522840A (en) Semiconductor switching element and manufacturing method thereof
JPS57117276A (en) Semiconductor device
JPS55140267A (en) Semiconductor device
JPS57138175A (en) Controlled rectifier for semiconductor
JPS5487488A (en) Field effect semiconductor device
JPS5593262A (en) Semiconductor device
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS5667970A (en) Gate turn-off thyristor
JPS5651868A (en) Semiconductor device
JPS55120165A (en) Semiconductor device
JPS5764969A (en) Semiconductor device
JPS5539667A (en) Turn off thyristor
JPS5457974A (en) Thyristor with amplifying gate
JPS55120166A (en) Semiconductor device
JPS5598857A (en) Planar type semiconductor device
JPS5559769A (en) Switching transistor
JPS55146968A (en) Semiconductor switching element
JPS649659A (en) Semiconductor element
JPS5655068A (en) Thyristor
JPS55148469A (en) Semiconductor rectifier diode
JPS55124260A (en) Method of fabricating high withstand voltage semiconductor device
JPS5640277A (en) Semiconductor device
JPS55150278A (en) Diode