JPS55140267A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55140267A JPS55140267A JP4823179A JP4823179A JPS55140267A JP S55140267 A JPS55140267 A JP S55140267A JP 4823179 A JP4823179 A JP 4823179A JP 4823179 A JP4823179 A JP 4823179A JP S55140267 A JPS55140267 A JP S55140267A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- type
- region
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To reduce the di/dt of a semiconductor device at turn-on time by forming an anode electrode on the entire surface of one surface of a thyristor and a partial gate electrode on the other surface thereof, and forming a reverse conducting region to a layer making contact with the anode electrode oppositely to the gate electrode in the layer. CONSTITUTION:A p-type layer 1 is diffused on one surface of an n-type semiconductor substrate 2, a pn-junction J1 is formed therebetween, a p-type layer 3 is formed on the other surface thereof, and a pn-junction J2 is formed between the layer 3 and the substrate 2. An n-type emitter region 4 is then diffused partially in the layer 3, a pn-junction J3 is formed in the boundary of the layer 3, and a cathode electrode 6 is coated on the region 4. Thereafter, a gate electrode 7 is coated on the layer 3 through an emitter and gate facing portion 8, an anode electrode 5 is coated on the entire surface of the layer 1 to form a thyristor. At this time an n-type region 4' is formed in the layer 1 oppositely to the electrode 7, and a gate current is controlled by a bulk effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4823179A JPS55140267A (en) | 1979-04-19 | 1979-04-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4823179A JPS55140267A (en) | 1979-04-19 | 1979-04-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55140267A true JPS55140267A (en) | 1980-11-01 |
Family
ID=12797657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4823179A Pending JPS55140267A (en) | 1979-04-19 | 1979-04-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55140267A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51135479A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electronics Corp | Reverse blocking type semiconductor controlled rectifier |
-
1979
- 1979-04-19 JP JP4823179A patent/JPS55140267A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51135479A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electronics Corp | Reverse blocking type semiconductor controlled rectifier |
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