JPS5648137A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5648137A
JPS5648137A JP12518279A JP12518279A JPS5648137A JP S5648137 A JPS5648137 A JP S5648137A JP 12518279 A JP12518279 A JP 12518279A JP 12518279 A JP12518279 A JP 12518279A JP S5648137 A JPS5648137 A JP S5648137A
Authority
JP
Japan
Prior art keywords
layers
rubber
semiconductor elements
wax
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12518279A
Other languages
Japanese (ja)
Inventor
Keishiro Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP12518279A priority Critical patent/JPS5648137A/en
Publication of JPS5648137A publication Critical patent/JPS5648137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To easily obtain many semiconductor elements by applying sandblast to a semiconductor wafer by using cushion layers such as Si rubber or the like wherein a photo etching is applied. CONSTITUTION:A semiconductor wafer 10 having a P-N junction 14 and providing Al layers 15, 16 at both major surfaces is prepared. The Al layer 16 is sticked to a glass sheet 19 by wax 18 and Si rubber layers 26 are printed on the Al layer 15 by a mask 25. With SiC powders 23 blown from the upper part of the rubber layers 26, many semiconductor elements 1a having slopes 17a will be obtained. After etching cracking layers 24 with a mixed solution of hydrofluoric acid and nitric acid, the Si rubber 26 are melted and removed and the semiconductor elements 1a will be obtained by melting the wax 18. In this composition, manufacture is remarkably easy and the cost prices will be reduced compared to a conventional manufacturing method using a metal disc.
JP12518279A 1979-09-27 1979-09-27 Manufacture of semiconductor device Pending JPS5648137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12518279A JPS5648137A (en) 1979-09-27 1979-09-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12518279A JPS5648137A (en) 1979-09-27 1979-09-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5648137A true JPS5648137A (en) 1981-05-01

Family

ID=14903921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12518279A Pending JPS5648137A (en) 1979-09-27 1979-09-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5648137A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669650A2 (en) * 1994-02-22 1995-08-30 Siemens Aktiengesellschaft Container for semiconductor device and method for manufacturing
JP2007299934A (en) * 2006-04-28 2007-11-15 Showa Denko Kk Nitride-based semiconductor light emitting element, its fabrication process, and lamp
JP2007299935A (en) * 2006-04-28 2007-11-15 Showa Denko Kk Nitride-based semiconductor light emitting element, process for fabricating the same and lamp

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0669650A2 (en) * 1994-02-22 1995-08-30 Siemens Aktiengesellschaft Container for semiconductor device and method for manufacturing
EP0669650A3 (en) * 1994-02-22 1997-03-19 Siemens Ag Container for semiconductor device and method for manufacturing.
JP2007299934A (en) * 2006-04-28 2007-11-15 Showa Denko Kk Nitride-based semiconductor light emitting element, its fabrication process, and lamp
JP2007299935A (en) * 2006-04-28 2007-11-15 Showa Denko Kk Nitride-based semiconductor light emitting element, process for fabricating the same and lamp

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