JPS5646526A - Wafer supporting and pushing apparatus in ion implantation - Google Patents

Wafer supporting and pushing apparatus in ion implantation

Info

Publication number
JPS5646526A
JPS5646526A JP12336979A JP12336979A JPS5646526A JP S5646526 A JPS5646526 A JP S5646526A JP 12336979 A JP12336979 A JP 12336979A JP 12336979 A JP12336979 A JP 12336979A JP S5646526 A JPS5646526 A JP S5646526A
Authority
JP
Japan
Prior art keywords
wafer
pushing
rotated
ion implantation
rotating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12336979A
Other languages
Japanese (ja)
Other versions
JPS6057656B2 (en
Inventor
Tadashi Nishimura
Shizuo Makino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12336979A priority Critical patent/JPS6057656B2/en
Publication of JPS5646526A publication Critical patent/JPS5646526A/en
Publication of JPS6057656B2 publication Critical patent/JPS6057656B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To smoothly send out wafers by rotating a support member downward, contacting said member to a contact portion, rotating a pushing member, and giving an initail sliding velocity to the wafer by the pushing portion. CONSTITUTION:A wafer 41 that is put in a pre-exhausting chamber is received and supported by a supporting member 51 which is standing-by at a portion A. Then, the member 51 is rotated to a position B, and the wafer 41 is subjected to the ion implantation. When the implantation has been finished, the member 51 is rotated to a position C. When the member 51 approaches the position C, the lower portion of the member 51 contacts with a contact portion 53b of a pushing member 53, thereby the member 53 is rotated. A puhsing wheel 33 is pushed by a pushing portion 53a, thereby very small initial velocity is given. The pusing action of the pushing portion 53a does not give abrupt acceleration to the wafer 41 which is characterized by the normal movement, but gives only slight initial velocity at the initial period of sliding. Therefore, the cracks are seldom generated in the wafer 41 in a processing tank.
JP12336979A 1979-09-25 1979-09-25 Wafer support extrusion equipment for ion implantation treatment tank Expired JPS6057656B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12336979A JPS6057656B2 (en) 1979-09-25 1979-09-25 Wafer support extrusion equipment for ion implantation treatment tank

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12336979A JPS6057656B2 (en) 1979-09-25 1979-09-25 Wafer support extrusion equipment for ion implantation treatment tank

Publications (2)

Publication Number Publication Date
JPS5646526A true JPS5646526A (en) 1981-04-27
JPS6057656B2 JPS6057656B2 (en) 1985-12-16

Family

ID=14858871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12336979A Expired JPS6057656B2 (en) 1979-09-25 1979-09-25 Wafer support extrusion equipment for ion implantation treatment tank

Country Status (1)

Country Link
JP (1) JPS6057656B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898941A (en) * 1981-11-30 1983-06-13 テンコ−・インストルメンツ Wafer chuck

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898941A (en) * 1981-11-30 1983-06-13 テンコ−・インストルメンツ Wafer chuck

Also Published As

Publication number Publication date
JPS6057656B2 (en) 1985-12-16

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