JPS5644770A - Preparation of thin film - Google Patents

Preparation of thin film

Info

Publication number
JPS5644770A
JPS5644770A JP11967579A JP11967579A JPS5644770A JP S5644770 A JPS5644770 A JP S5644770A JP 11967579 A JP11967579 A JP 11967579A JP 11967579 A JP11967579 A JP 11967579A JP S5644770 A JPS5644770 A JP S5644770A
Authority
JP
Japan
Prior art keywords
substrate
laser beam
heated
thin film
back face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11967579A
Other languages
Japanese (ja)
Inventor
Masanori Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11967579A priority Critical patent/JPS5644770A/en
Publication of JPS5644770A publication Critical patent/JPS5644770A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve the covering property of thin film formed on the surface of substrate, by providing the means maintaining the whole surface of semiconductor substrate at a fixed temperature. CONSTITUTION:The whole surface or back face of substrate during vapor deposition, is heated at a high temperature by irradiating laser beam and crack generation of stepped part is prevented and covering property is improved. For example, metal film is formed on the semiconductor substrate 10 by the anode 6 and the cathode (target) 7. The substrate 10 is heated by expanding the beam diameter of the laser beam 15 generated by the Ar, Kr, CO2 or YAG laser oscillator 12 by the optical system 13 and changing advancing direction by reflecting the beam by using the mirror 14 and then, irradiating on the whole back face of the substrate 10 at the same time. Heat of the substrate 10 is transmitted from the substrate 10 to the substrate support tool 9 and the temperature of the substrate 10 is measured by the thermocouple 11. The substrate 10 is easily heated until about 1,000 deg.C by the laser beam irradiation.
JP11967579A 1979-09-17 1979-09-17 Preparation of thin film Pending JPS5644770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11967579A JPS5644770A (en) 1979-09-17 1979-09-17 Preparation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11967579A JPS5644770A (en) 1979-09-17 1979-09-17 Preparation of thin film

Publications (1)

Publication Number Publication Date
JPS5644770A true JPS5644770A (en) 1981-04-24

Family

ID=14767262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11967579A Pending JPS5644770A (en) 1979-09-17 1979-09-17 Preparation of thin film

Country Status (1)

Country Link
JP (1) JPS5644770A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074517A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Sputtering device
EP0154561A2 (en) * 1984-03-07 1985-09-11 General Signal Corporation Improved apparatus and method for laser-induced chemical vapor deposition
JPS61245525A (en) * 1985-04-23 1986-10-31 Fujitsu Ltd Manufacture of metal thin film
JPH02163368A (en) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd Sputtering device
WO2000015864A1 (en) 1998-09-11 2000-03-23 Japan Science And Technology Corporation Laser heater
JP2008025027A (en) * 2006-06-22 2008-02-07 Fujikura Ltd Laser heating device for vacuum chamber and apparatus for vacuum process
CN113957406A (en) * 2021-10-22 2022-01-21 埃频(上海)仪器科技有限公司 Heating device for preparing oxide film

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074517A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Sputtering device
EP0154561A2 (en) * 1984-03-07 1985-09-11 General Signal Corporation Improved apparatus and method for laser-induced chemical vapor deposition
JPS61245525A (en) * 1985-04-23 1986-10-31 Fujitsu Ltd Manufacture of metal thin film
JPH0420980B2 (en) * 1985-04-23 1992-04-07 Fujitsu Ltd
JPH02163368A (en) * 1988-12-15 1990-06-22 Matsushita Electric Ind Co Ltd Sputtering device
WO2000015864A1 (en) 1998-09-11 2000-03-23 Japan Science And Technology Corporation Laser heater
EP1116802A1 (en) * 1998-09-11 2001-07-18 Japan Science and Technology Corporation Laser heater
US6617539B1 (en) 1998-09-11 2003-09-09 Japan Science And Technology Kawaguchi Laser heating apparatus
EP1116802A4 (en) * 1998-09-11 2004-09-08 Japan Science & Tech Agency Laser heater
JP2008025027A (en) * 2006-06-22 2008-02-07 Fujikura Ltd Laser heating device for vacuum chamber and apparatus for vacuum process
CN113957406A (en) * 2021-10-22 2022-01-21 埃频(上海)仪器科技有限公司 Heating device for preparing oxide film

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