JPS63119219A - Thin-film crystallizing method by laser - Google Patents
Thin-film crystallizing method by laserInfo
- Publication number
- JPS63119219A JPS63119219A JP26457386A JP26457386A JPS63119219A JP S63119219 A JPS63119219 A JP S63119219A JP 26457386 A JP26457386 A JP 26457386A JP 26457386 A JP26457386 A JP 26457386A JP S63119219 A JPS63119219 A JP S63119219A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- thin
- laser beams
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims description 12
- 238000002425 crystallisation Methods 0.000 claims abstract description 16
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000000155 melt Substances 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 abstract description 12
- 238000000137 annealing Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
２７°−・ル
−ザ光線を用いて絶縁体や半導体の薄膜を結晶化させる
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Use This invention relates to a method for crystallizing thin films of insulators and semiconductors using 27°-loser beams.
従来の技術
従来、薄膜の結晶化は、時間的に均一なエネルギを持つ
高エネルギ光例えばレーザ光を照射し薄膜の一部を溶解
させ、照射位置を移動させることによって行なっていた
、表面およびその近傍のみが溶けて、内部にまで高熱が
伝わらないのが利点であった。Conventional technology Conventionally, thin film crystallization was carried out by irradiating high-energy light, such as laser light, with temporally uniform energy to melt part of the thin film and moving the irradiation position. The advantage was that only the vicinity would melt, preventing high heat from reaching the interior.
発明が解決しようとする問題点
レーザ光を照射すると表面は溶解するが内部はそのまま
で、照射を終えると表面のみがまたは表面上でも照射し
ている部分のみが結晶化し、溶解しなかった部分すなわ
ち結晶化していない部分との界面の電気特性が悪く、こ
れを用いた半導体素子では良いものができなかった。こ
れを改善するため従来は、電気炉中でアニールを行なっ
ていたが、内部に熱を伝えないというレーザ結晶化法の
利点をそこなうものであった。かつ、プロセスが増加し
、手間のかかる工程となっていた。Problems to be Solved by the Invention When irradiated with laser light, the surface melts, but the inside remains intact, and when the irradiation ends, only the surface or only the irradiated part of the surface crystallizes, and the undissolved part, i.e. The electrical properties at the interface with the non-crystallized portion were poor, and it was not possible to produce good semiconductor devices using this material. Conventionally, to improve this problem, annealing was performed in an electric furnace, but this undermined the advantage of the laser crystallization method of not transmitting heat to the inside. In addition, the number of processes increases, making it a time-consuming process.
ｓ”−；
問題点を解決するための手段
薄膜に照射するレーザ光のエネルギを時間的に変化させ
る。具体的には、１つのレーザ光を２つに分け、■第１
のレーザ光で薄膜を予め加熱しておき、加熱中に第２の
レーザ光を照射し薄膜を溶解するものと、■第１のレー
ザ光で薄膜を溶解し、その後、第２のレーザ光でアニー
ルするものである。ただし、１つのレーザ光を必ずしも
２つに分ける必要はなく２つのレーザを用いても良い。s"-; Means to solve the problem Temporally change the energy of the laser beam irradiated to the thin film. Specifically, one laser beam is divided into two, and the
There are two methods in which the thin film is preheated with a laser beam, and a second laser beam is irradiated during heating to melt the thin film; It is annealed. However, it is not necessary to divide one laser beam into two, and two lasers may be used.
この場合、波長は、薄膜を溶解するものとアニールする
ものとで変えても良い。In this case, the wavelength may be different depending on whether the thin film is dissolved or annealed.
作 用
予め第１のレーザ光で予熱している間に薄膜を溶解する
第２のレーザ光を照射し、その後も第１のレーザ光を照
射することによって結晶化後のアニールを同時に行なえ
る。！た、第１のレーザ光で薄膜を溶解し、その後筒２
のレーザ光でこれをアニールすることによって、結晶化
後のアニールを同時に行なうことができる。Function: While preheating with the first laser beam, the second laser beam for melting the thin film is irradiated, and then the first laser beam is irradiated to simultaneously perform post-crystallization annealing. ! In addition, the thin film was melted with the first laser beam, and then the tube 2
By annealing this with laser light, post-crystallization annealing can be performed simultaneously.
実施例 以下、本発明の実施例について図面を用いて説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
実施例１
ＬＰＣＶＤ （Ｌｏｗ Ｐｒｅｓｓｕｒｅ Ｃｈｅｍ
ｉｃａ［ＶａｐｏｒＤｅｐｏｓ ｉ ｔ ｔｏｎ ）法
によるシリコン薄膜（以下ＶＰＣＶＤＳＬと略す）のレ
ーザによる結晶化。Example 1 LPCVD (Low Pressure Chem)
Laser crystallization of a silicon thin film (hereinafter abbreviated as VPCVDSL) by the ica [VaporDeposits ton] method.
Ｌ Ｐ ＣＶＤ Ｓ ｉ薄膜１は、Ｓ ｉＨ４ガスを０
．５Ｔｏｒｒ程度の真空度に保ちなからｅｏｏ’ｃ程度
に加熱された石英管に導入し、ＳｉＨ４を熱分解して形
成する。L P CVD Si thin film 1 contains 0 SiH4 gas.
．． While maintaining the degree of vacuum at about 5 Torr, it is introduced into a quartz tube heated to about eoo'c, and SiH4 is thermally decomposed and formed.
基板２には単結晶Ｓｔ（以下Ｃ−８ｔと略す）ウェハや
、石英ガラス等を用いている。これを結晶化する方法を
図示したのが図である。結晶化に用いるレーザ３は例え
ばＡｒレーザやＨｅ −Ｎｅし〜ザ。For the substrate 2, a single crystal St (hereinafter abbreviated as C-8t) wafer, quartz glass, or the like is used. The figure illustrates a method for crystallizing this. The laser 3 used for crystallization is, for example, an Ar laser or a He-Ne laser.
Ｃｏ２レーザ等がある。結晶化の深さや結晶化する面積
等に応じて選べば良い。レーザ３から出たレーザ光４は
、ハーフミラ−５で２つに分けられ、それぞれ反射鏡６
，７を用いて結晶化しようとする部分へ照射する。予熱
および結晶化後のアニールとして用いるレーザ光８を反
射する反射鏡７は固定されており、レーザ光８はＳｔ薄
膜１の広い５１°−７
範囲を照射している。Ｓｔ薄膜１を溶解し結晶化するレ
ーザ光９は、反射鏡６に反射する。反射鏡６は可動式で
狭い範囲を走査できるようになっている。結晶化部分１
ｏがほんとうに結晶化しているかどうか判断するのには
ある特定波長域の光を用いその反射率で調べる。分光器
１１から照射された光１２は、結晶化部分１０で反射し
、検知器１３に導入される。ここで得た信号はレーザ３
および反射鏡６の駆動部にフィードバックされ、適切な
結晶化がなされるようになっている。基板２はステージ
（図示せず）に乗っており移動できるようになっている
。There are Co2 lasers and the like. It may be selected depending on the depth of crystallization, area of crystallization, etc. The laser beam 4 emitted from the laser 3 is divided into two by a half mirror 5, and each is split into two by a reflecting mirror 6.
, 7 is used to irradiate the area to be crystallized. A reflecting mirror 7 that reflects a laser beam 8 used for preheating and post-crystallization annealing is fixed, and the laser beam 8 irradiates a wide 51°-7 range of the St thin film 1. The laser beam 9 that dissolves and crystallizes the St thin film 1 is reflected by the reflecting mirror 6. The reflecting mirror 6 is movable and can scan a narrow range. Crystallized part 1
To determine whether o is really crystallized, we use light in a specific wavelength range and examine its reflectance. Light 12 irradiated from the spectroscope 11 is reflected by the crystallized portion 10 and introduced into the detector 13 . The signal obtained here is laser 3
This is fed back to the driving section of the reflecting mirror 6, so that appropriate crystallization can be carried out. The substrate 2 is mounted on a stage (not shown) and is movable.
実施例２ レーザを２つ用いたＬＰＣＶＤＳｉ薄膜の結晶化。Example 2 Crystallization of LPCVDSi thin film using two lasers.
第１図ではレーザを１つしか用いず、ハーフミラ−で２
つに分けていたが、レーザを２つ用い、予熱およびアニ
ール用と結晶化用とに役割を分けても本発明は実施され
た。In Figure 1, only one laser is used, and two lasers are used with a half mirror.
However, the present invention could also be carried out even if two lasers were used and their roles were divided into one for preheating and annealing and one for crystallization.
実施例３ 絶縁膜の結晶化。Example 3 Crystallization of insulating film.
（５’ニー＞
スパッタリング法やグロー放電法によって作成したＳｉ
Ｃ薄膜も同様に結晶化させることができた。(5'knee> Si created by sputtering method or glow discharge method
The C thin film could also be crystallized in the same way.
この場合、結晶化部分を検知する光の波長は、Ｓｔ結晶
化を検知するものとは異なっていた。In this case, the wavelength of light for detecting crystallized portions was different from that for detecting St crystallization.
発明の効果
本発明によれば、レーザを用いて薄膜を結晶化させる利
点、すなわち、レーザ照射によって表面は溶解し結晶化
するが、内部は温度が上がらないという点は保存したま
ま、結晶化部分と未処理部部との界面のアニールまでレ
ーザ照射中に一度に行なえるため、微細加工の進んでい
る集積回路等の製造プロセスにも容易に導入できる。Effects of the Invention According to the present invention, the advantage of crystallizing a thin film using a laser, that is, the surface is melted and crystallized by laser irradiation, but the temperature inside does not rise, is preserved, and the crystallized portion is Since the interface between the surface and the untreated portion can be annealed all at once during laser irradiation, it can be easily introduced into the manufacturing process of integrated circuits, etc., where microfabrication is advanced.
図は本発明の一実施例を示す図である。
１＝−・ＬＰＣＶＤＳｔ薄膜、３・・中レーザ、４，８
゜９・川・・レーザ光、５山山ハーフミラ−１６，７・
・・・・・反射鏡、１ｏ・・・・・・結晶化部分、１１
・・・・・・分光器、１３・・・・・・検知器。The figure shows an embodiment of the present invention. 1=-LPCVDSt thin film, 3...medium laser, 4,8
゜9・River...laser light, 5 mountains half mirror-16,7・
...Reflector, 1o...Crystallized part, 11
...Spectrometer, 13...Detector.
Claims (3)
に照射することを特徴とするレーザによる薄膜結晶化方
法。(1) A method for crystallizing a thin film using a laser, which is characterized in that a thin film is irradiated with laser light energy while changing it over time.
にある一定の時間照射し、上記照射時間の一部の時間の
一部の時間に上記薄膜の少なくとも表面が溶解する第２
のレーザ光を照射することを特徴とする特許請求の範囲
第１項記載のレーザによる薄膜結晶化方法。(2) A second laser beam that irradiates a thin film with a first laser beam having a certain predetermined energy for a certain period of time, and that at least the surface of the thin film melts during a part of the irradiation time.
2. A method for crystallizing a thin film using a laser according to claim 1, characterized in that the method comprises irradiating a laser beam of .
を照射した後、薄膜を溶解させることのない第２のレー
ザ光を照射することを特徴とする特許請求の範囲第１項
記載のレーザによる薄膜結晶化方法。(3) The laser according to claim 1, characterized in that after irradiating the first laser beam that melts at least the surface of the thin film, the second laser beam that does not melt the thin film is irradiated. thin film crystallization method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26457386A JPS63119219A (en) | 1986-11-06 | 1986-11-06 | Thin-film crystallizing method by laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26457386A JPS63119219A (en) | 1986-11-06 | 1986-11-06 | Thin-film crystallizing method by laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63119219A true JPS63119219A (en) | 1988-05-23 |
Family
ID=17405165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26457386A Pending JPS63119219A (en) | 1986-11-06 | 1986-11-06 | Thin-film crystallizing method by laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63119219A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100341708B1 (en) * | 1994-07-28 | 2002-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Laser treatment method |
| CN107230612A (en) * | 2016-03-23 | 2017-10-03 | 三星显示有限公司 | Laser crystallization equipment and method |
-
1986
- 1986-11-06 JP JP26457386A patent/JPS63119219A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100341708B1 (en) * | 1994-07-28 | 2002-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Laser treatment method |
| US6482687B2 (en) | 1994-07-28 | 2002-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| US6495404B1 (en) | 1994-07-28 | 2002-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| US6753213B2 (en) | 1994-07-28 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
| CN107230612A (en) * | 2016-03-23 | 2017-10-03 | 三星显示有限公司 | Laser crystallization equipment and method |
| CN107230612B (en) * | 2016-03-23 | 2023-12-15 | 三星显示有限公司 | Laser crystallization device and method |
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