JPS5637665A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5637665A JPS5637665A JP11380079A JP11380079A JPS5637665A JP S5637665 A JPS5637665 A JP S5637665A JP 11380079 A JP11380079 A JP 11380079A JP 11380079 A JP11380079 A JP 11380079A JP S5637665 A JPS5637665 A JP S5637665A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- emitter
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 230000003321 amplification Effects 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To increase the current amplification factor of a semiconductor device and to improve the noise elimination characteristics thereof by reducing the thickness of an insulating film on the confronting portion between an emitter aned collector of a lateral transistor thinner than the other portion and extensively forming a low resistance substance becoming an emitter electrode thereon. CONSTITUTION:An N<+> type buried region region 4 is diffused in a P type Si substrate 1, an N type layer 2 becoming a base region including the region 4 is eptaxially grown, and the region 4 is simultaneously floated in the layer 2. An N<+> type base electrode pickup region 7 is further diffused then with P type collector region 6 in the same manner as a P type emitter region 5 in the surface layer of the layer 2, an insulating film 3 is coated on the entire surface, the film 3 disposed between the regions 5 and 6 is removed, and an insulating film 3' having a thickness of 500- 2300Angstrom is newly coated thereon. When a collector electrode 9 is formed on the region 6 or a base electrode 10 is formed on the region 7 thereafter, the emitter electrode 8 formed on the region 6 is creeped extensively on the thin film 3'.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11380079A JPS5637665A (en) | 1979-09-05 | 1979-09-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11380079A JPS5637665A (en) | 1979-09-05 | 1979-09-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5637665A true JPS5637665A (en) | 1981-04-11 |
Family
ID=14621389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11380079A Pending JPS5637665A (en) | 1979-09-05 | 1979-09-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637665A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0298040A (en) * | 1988-10-04 | 1990-04-10 | Toshiba Battery Co Ltd | Manufacture of raw electrode sheet for spiral electrode |
US6824925B2 (en) | 2001-07-10 | 2004-11-30 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing base for electrode plate, method for manufacturing positive electrode plate and alkaline storage battery |
-
1979
- 1979-09-05 JP JP11380079A patent/JPS5637665A/en active Pending
Non-Patent Citations (1)
Title |
---|
IBM TECHNICAL DISCLOSURE BULLETIN=1976 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0298040A (en) * | 1988-10-04 | 1990-04-10 | Toshiba Battery Co Ltd | Manufacture of raw electrode sheet for spiral electrode |
US6824925B2 (en) | 2001-07-10 | 2004-11-30 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing base for electrode plate, method for manufacturing positive electrode plate and alkaline storage battery |
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