JPS56158432A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56158432A JPS56158432A JP6430780A JP6430780A JPS56158432A JP S56158432 A JPS56158432 A JP S56158432A JP 6430780 A JP6430780 A JP 6430780A JP 6430780 A JP6430780 A JP 6430780A JP S56158432 A JPS56158432 A JP S56158432A
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- film
- atomic weight
- oxide film
- alpha
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent an erroneous operation caused by an alpha-ray by providing a tantalum oxide film or a tungsten oxide film through Si3N4 or directly on a circuit element and a wiring layer on the semiconductor substrate. CONSTITUTION:In the MOSLSI memory, further a tantalum oxid film 10 is formed on the whole surface of the Si3N4 film 9. Because the shielding capacity of the radioactive rays such as an alpha-ray is the higher the atomic weight is larger and the atomic weight of tantalum is large by that much, the film 10 of about 1mum has the capacity larger than a polyamide resin of about 30mum. As tantalum oxide is an insulator, it can be directly laminated. As tungsten has the approximate atomic weight to that of tantalum, the tungsten oxide film is equally effective for the same purpose.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430780A JPS56158432A (en) | 1980-05-12 | 1980-05-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430780A JPS56158432A (en) | 1980-05-12 | 1980-05-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158432A true JPS56158432A (en) | 1981-12-07 |
Family
ID=13254448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6430780A Pending JPS56158432A (en) | 1980-05-12 | 1980-05-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158432A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62259448A (en) * | 1986-04-14 | 1987-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Formation of insulating film |
US6714387B1 (en) * | 2001-01-08 | 2004-03-30 | Headway Technologies, Inc. | Spin valve head with reduced element gap |
-
1980
- 1980-05-12 JP JP6430780A patent/JPS56158432A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62259448A (en) * | 1986-04-14 | 1987-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Formation of insulating film |
US6714387B1 (en) * | 2001-01-08 | 2004-03-30 | Headway Technologies, Inc. | Spin valve head with reduced element gap |
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