JPS5633818A - Method for ion implantation - Google Patents

Method for ion implantation

Info

Publication number
JPS5633818A
JPS5633818A JP10989079A JP10989079A JPS5633818A JP S5633818 A JPS5633818 A JP S5633818A JP 10989079 A JP10989079 A JP 10989079A JP 10989079 A JP10989079 A JP 10989079A JP S5633818 A JPS5633818 A JP S5633818A
Authority
JP
Japan
Prior art keywords
thin film
implanted
substrate
beams
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10989079A
Other languages
Japanese (ja)
Inventor
Yasuo Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10989079A priority Critical patent/JPS5633818A/en
Publication of JPS5633818A publication Critical patent/JPS5633818A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To prevent the sticking of stray beams generated from built-up substances in the pipe of an ion implanting device to the surface of a semiconductor substrate by carrying out ion implantation through a thin film placed in parallel to the surface of the semiconductor substrate. CONSTITUTION:A thin film 1 is arranged before a silicon substrate 3 on which surface a mask substance of a required pattern is formed, and ion beams 4 are implanted to the silicon substrate 3 through this thin film 1. This thin film 1 is constructed of a polycrystalline silicon thin film 6 and quartz glass boares 5, 5' and 5'' which support the thin film, and ions are implanted moving this thin film 1 almost perpendicularly to the longer sides of a stripe. By so doing, the sticking of stray beams caused by the spattering of the implanted ion beams to the pipe wall, etc., which construct the inside of a vacuum system, to the surface of the substrate can be prevented.
JP10989079A 1979-08-29 1979-08-29 Method for ion implantation Pending JPS5633818A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10989079A JPS5633818A (en) 1979-08-29 1979-08-29 Method for ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10989079A JPS5633818A (en) 1979-08-29 1979-08-29 Method for ion implantation

Publications (1)

Publication Number Publication Date
JPS5633818A true JPS5633818A (en) 1981-04-04

Family

ID=14521743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10989079A Pending JPS5633818A (en) 1979-08-29 1979-08-29 Method for ion implantation

Country Status (1)

Country Link
JP (1) JPS5633818A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186126A (en) * 1982-04-23 1983-10-31 Denki Kagaku Kogyo Kk Thermal electron emitting cathode chip
JPH0272535A (en) * 1988-09-06 1990-03-12 Ube Ind Ltd Tip sharpening method for electron cathode material
JP2018014486A (en) * 2016-06-06 2018-01-25 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Energy filter for processing power semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186126A (en) * 1982-04-23 1983-10-31 Denki Kagaku Kogyo Kk Thermal electron emitting cathode chip
JPH0272535A (en) * 1988-09-06 1990-03-12 Ube Ind Ltd Tip sharpening method for electron cathode material
JP2018014486A (en) * 2016-06-06 2018-01-25 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Energy filter for processing power semiconductor device
US10242840B2 (en) 2016-06-06 2019-03-26 Infineon Technologies Ag Energy filter for processing a power semiconductor device
US10403468B2 (en) 2016-06-06 2019-09-03 Infineon Technologies Ag Energy filter for processing a power semiconductor device

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